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  • American Institute of Physics (AIP)  (5)
Document type
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Years
  • 1
    Electronic Resource
    Electronic Resource
    An observation of 650 °C deformation of Si surface under ultra high vacuum (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3038-3040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant deformation of a grooved Si surface is discovered during low temperature processing (650–900 °C) in a ultra high vacuum. The lowest temperature at which deformation results is determined to be 650 °C for a (111)Si substrate. In addition, clear facets are formed after high temperature processing (850–900 °C). These new findings are tentatively considered to originate from the surface migration of Si atoms on atomically clean surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346395
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Elimination of misfit dislocations in Si1−xGex/Si heterostructures by limited-area molecular-beam epitaxial growth (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5913-5917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Limited-area molecular-beam epitaxial growth of Si1−xGex films, on a Si substrate with patterned SiO2, has been studied in order to eliminate misfit dislocations in Si1−xGex/Si heterostructures. This method is found to dramatically reduce misfit dislocations in Si1−xGex films. Hence, a thicker Si1−xGex film can be grown, without introducing misfit dislocations, on a Si substrate with patterned SiO2 than on a Si substrate without patterned SiO2. This phenomenon is attributed to the blocking of misfit dislocation extension and to a partial relaxation of the residual strain in the boundary between the crystal and polycrystalline Si1−xGex film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350440
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1681-1683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the MOSFET's are varied as a function of distance from the seeding region. Significant differences in electrical characteristics of the MOSFET's are observed depending on the single-crystal growth mode. A field-effect (electron) mobility of about 700 cm2/(V s) was obtained for n-channel MOSFET's fabricated in the {110} facet grown region. That for the {111} facet growth region was inadequate. The results indicate the possibility of applying the method for future three-dimensional device structures using a {110} facet grown region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99017
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature SOI (Si-on-insulator) formation by lateral solid-phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3018-3023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (550–600 °C) formation of a Si-on-insulator structure by a solid-phase process is investigated. A microprobe (μ) reflection high-energy electron diffraction observation reveals that oriented crystal growth propagates from the seeding area in solid-phase epitaxy (SPE). The effects of random nucleation, epitaxial alignment, and local doping on lateral (L)-SPE are examined. As a result, a relatively large L-SPE area, 14 μm from the seeding area, is achieved on insulating regions. Crystal quality and electrical properties of L-SPE layers are examined using μ-Raman spectroscopy and field-effect transistor fabrication. A small stress field, 2.5×109 dyn/cm2, and high electron mobility, 720 cm2/V s, comparable to that of bulk Si are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341565
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of thin SiO2 capping layer on silicon-on-insulator formation by lateral solid-phase epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 80-81 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107381
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    Paper (German National Licenses)
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