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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering and stress measurements in Si1−xGex layers epitaxially grown on Si(100) by ion-beam sputter deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4268-4277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex thin films have been grown on silicon substrates by ion-beam sputter deposition (IBSD). Film stress has been determined from the change in deflection curvature of the substrate after deposition and strain has been investigated by using Raman scattering spectroscopy. These properties have been studied as a function of different parameters: growth temperature, layer thickness, and annealing conditions. Raman and stress results are in close correspondence with regard to effects of deposition temperature. Si-rich films (0≤x≤0.3) were compressively strained for all deposition temperatures. A compressive to tensile stress change was observed in the Ge-rich alloys (x=0.6) when the growth temperature reached Tg ≈ 500 °C. In addition, the strain as a function of depth from the surface has been studied by changing the laser wavelength. The strain has been shown to increase from the surface to the interior of the film. The origin of the stress observed in IBSD films is discussed and we show that this stress is due to the effect of the bombardment of the growing film by energetic sputtered atoms and can be understood by using the atomic peening model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349104
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  • 2
    Electronic Resource
    Electronic Resource
    Fermi level position at metal Si1−x−yGexCy interfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5533-5542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have investigated the Schottky barrier heights on n- and p-type Si1−x−yGexCy alloys with Zr, Ti, W, Ni and Pt as metals (ΦBn and ΦBp, respectively). Contacts on Si1−xGex alloys showed various behaviors depending on the metal work function Φm. For low-Φm metals (Zr, Ti), ΦBn increases with x, while ΦBp(x) decreases. For higher Φm metals (Pt), ΦBn strongly decreases with x. In the particular case of W (intermediate Φm value), ΦBp follows exactly the decrease of the SiGe band gap with x, while ΦBn remains constant. Nevertheless, whatever the metal, the reduction of the sum ΦBn+ΦBp gives the band-gap variation as a function of x, and the Fermi level is located at the same position for both n and p-type layers. A weaker effect of Φm on the Schottky barrier heights is observed compared to pure Si: the position of the Fermi level tends to remain in the range 0.60–0.65 eV below the conduction band, as soon as Ge is adding in Si. W contacts on Si1−x−yGexCy alloys evidenced the strong effect of C on ΦBn and ΦBp. The variations of ΦBn(y) or ΦBp(y) cannot be correlated to the band gap. In addition, the position of the Fermi level at the interface depends on the type of the alloy. Nevertheless, as in the case of the binary alloy SiGe, a weaker dependence on Φm compared to that observed for pure Si is shown. High values of the ideality factor with increasing the C content may evidence the presence of interfacial inhomogeneities, which could be correlated to C short range order. The present results have been compared to existing published results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365943
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  • 3
    Electronic Resource
    Electronic Resource
    Phase formation and strain relaxation during thermal reaction of Zr and Ti with strained Si1−x−yGexCy epilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1418-1423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicides are often used in Si technology for both their ohmic and rectifying properties. In this work, we have compared Zr and Ti germanosilicides as possible metallic contacts on SiGeC alloys in terms of phase formation and stability of the unreacted SiGeC alloy. The germanosilicides are obtained after rapid thermal annealings of Zr or Ti with strained SiGeC layers. The interactions of the metal films with these alloys have been investigated by sheet resistance measurements, x-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM), and energy dispersive spectroscopy in situ in the TEM. Four crystal x-ray diffraction was performed to measure the residual strain of the unreacted SiGeC epilayer after reaction. The analyses indicate that the final compounds are the C49–Zr(SiGe)2 and C54–Ti(SiGe)2 phases, respectively: In both cases, the compound is formed by monocrystalline grains with various orientations. Nevertheless, neither XRD, nor sheet resistance measurements give any clear information about the C incorporation in the phase, when the reaction occurs with a SiGeC layer. We have observed that the use of Zr completely avoids Ge segregation with an uniform layer formed, while in the case of the reaction with Ti, the grains do not form a continuous layer and Ge-segregation is evidenced: A Ge-rich Si1−z−yGez(Cy) alloy is detected in between the metallic grains. In addition, an early strain relaxation of the unreacted SiGe layer is observed after reaction, and it is much more important after reaction with Ti. During the reaction with nearly compensated SiGeC layers, Zr totally prevents the initial state of strain, while Ti strongly affects the unreacted SiGeC alloy and destroys its initial state. All these results indicate that Zr may be an interesting candidate for realizing germanosilicide contacts on IV–IV alloys, due to its good thermal stability. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373833
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition of mass selected silver clusters in rare gas matrices (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8535-8543 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report on the successful "soft landing'' of size selected silver dimers and trimers in solid krypton matrices. Silver cluster cations, produced by sputtering, were mass selected in a quadrupole mass filter and then codeposited with krypton on a cooled sapphire or CaF2 window in the presence of low energy electrons. Neutralized cluster samples were interrogated in situ by excitation and fluorescence spectroscopy. Deposition of slow (≤20 eV) silver dimer cations gave rise to strong excitation bands (centered at λ=275 and 390 nm) from Ag2 plus the characteristic triplet signal of the atom. The spectra imply that fewer than 25% of the dimers were fragmented during the neutralization and deposition steps. In similar experiments with Ag3 we were able to assign trimer absorption bands at 331, 364, 402, 421, 458, and 514 nm and identify characteristic emission features at 381, 560, and 626 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459291
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  • 5
    Electronic Resource
    Electronic Resource
    Simultaneous energy distribution and ion fraction measurements using a linear time-of-flight analyzer with a floatable drift tube (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4515-4522 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A technique for simultaneous energy distribution and ion fraction measurements using a linear time-of-flight analyzer with a floatable drift tube is described. Analytical expressions for the relative collection efficiency and viewing region of the apparatus are developed as functions of the analyzed particle reduced energy and dimensionless apparatus parameters. The method was applied to studies of large-angle scattering of singly charged oxygen ions incident on Au(110), and carried out at the Oak Ridge National Laboratory's Multicharged Ion Research Facility. Energy distributions of the scattered projectiles and the negative ion fraction are presented as a function of scattered projectile energy. As a by-product of the measurements, the relative ion detection efficiency of the particle detector was reconstructed as a function of ion impact energy on the detector. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150104
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of growth conditions on the structural properties of ion beam sputter deposited SiGe epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4975-4981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of Si1−xGex layers epitaxially grown on Si(100) by Ion Beam Sputter Deposition were studied as a function of growth temperature and film thickness. It was shown that the structure of defects strongly depends on the growth temperature, Tg. The dislocations cross grid which is observed at the SiGe/Si interface for layers grown at high (700 °C) Tg is missing in layers grown at low ((approximately-less-than)550 °C) Tg, while a new type of defects parallel to {001} and {113} lattice planes appear at these temperatures. The optimal Tg for a Ge content of 20-25 at. % was found to be close to 550-625 °C. Surface roughness for all the growth temperatures was found to be less than that for such a "smooth'' technique as MBE. Photoluminescence studies revealed, to the best of our knowledge for the first time, two peaks on the low energy side in the neighborhood of the Si(TO) peak of the epilayers. The evolution of the intensity of these peaks is strongly correlated with the dynamics of strain relaxation and can be attributed to a set of dislocations at the SiGe/Si interface extending both to the epilayer and to the bulk Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359788
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  • 7
    Electronic Resource
    Electronic Resource
    Reactive-ion-beam-sputtered WNx films on silicon: Growth mode and electrical properties (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3900-3907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: WN films were deposited on clean Si(100) substrates via reactive-ion-beam sputtering a W target by a nitrogen ion beam in an UHV system. The energy of the incident ions varied in the range of 0.250 to 3 keV. The growth mode dependence of the films on the nitrogen ion energy was studied by in situ Auger electron spectroscopy measured as a function of coverage. Nitridation of the Si at the first stage of deposition has been found. This nitridation was more pronounced for the lower N beam energies, and minimal for the 2 keV beam. A similar trend was observed for the bulk film composition. In a complementary way, the dependence of electrical properties of the WN/Si junctions on the nitrogen energy has been studied. A higher barrier height on p-type Si than on n-type Si was found, unlike the expectation for regular metallization of W and its compounds on Si. The electrical characteristics can be attributed to the deposition technique. For the low-energy beams, the formation of the interfacial layer was probably dominating, while at higher energies radiation damage and possibly also N implantation played a more important role.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356035
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  • 8
    Electronic Resource
    Electronic Resource
    Schottky diodes with high series resistance: Limitations of forward I-V methods (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7973-7984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some methods have been proposed to deduce the value of Schottky parameters from forward I-V characteristic even in the presence of a large series resistance. In this paper, some well-known methods have been applied to experimental data of a real diode and to computer calculated curves. A comparison is made between these methods and the standard procedure. Some indications are given on the validity and the main limitations of all these techniques. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357909
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature reaction in tungsten layers deposited on Si(100) substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 226-228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten layers have been evaporated with an electron gun under ultrahigh vacuum conditions on atomically clean Si(100) substrates. The metallic films deposited on substrates at room temperature are mostly in the body-centered-cubic α phase of tungsten. Upon annealing at 400 °C, the bulk of the layer stays unreacted but we have observed the appearance of cracks in the metallic film and the segregation of silicon atoms at the surface. These atoms are not in the form of crystalline WSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102382
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancing the performances of traditional electron cyclotron resonance ion sources with multiple-discrete-frequency microwave radiation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2305-2312 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performances of electron cyclotron resonance (ECR) ion sources, in terms of high-charge-state yields and intensities within a particular charge state, can be enhanced by increasing the physical sizes of the ECR zones in relation to the sizes of their plasma volumes. The creation of a large ECR plasma "volume" permits coupling of more power into the plasma, resulting in the heating of a much larger electron population to higher energies, the effect of which is to produce higher charge-state distributions and higher intensities within a particular charge state than possible in present forms of the ECR source. The ECR plasma "volumes" of traditional B-minimum ECR sources can be increased by injecting broadband microwave radiation (multiple-discrete-frequency, variable frequency, or broad-band-width frequency microwave radiation) derived from standard klystron, gyrotron, or traveling-wave-tube (TWT) technologies (frequency domain). To demonstrate that the frequency domain technique can be used to enhance the performance of a traditional B-minimum ECR ion source, comparative studies were made to assess the relative performances of the Oak Ridge National Laboratory Caprice ECR ion source, in terms of multiply charged ion-beam generation capabilities, when excited with high-power, single-frequency, or multiple-discrete-frequency microwave radiation, derived from standard klystron and/or TWT technologies. These studies demonstrate that the charge-state populations for Ar q+ and Xeq+ move toward higher values when excited with two and three discrete-frequency, microwave power compared to those observed when single-frequency microwave power is used. For example, the most probable charge state for Xe is increased by one charge-state unit while the beam intensities for charge states higher than the most probable are increased by factors of ∼3 compared to those observed for single-frequency plasma excitation. The results of these measurements along with details on the modifications to the injection system required to couple the microwave radiation into the plasma volume of the Caprice source will be presented in this report. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148936
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