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  • 1
    Electronic Resource
    Electronic Resource
    Structural defects in 3C–SiC grown on Si by supersonic jet epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2509-2515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 3C–SiC thin films have been grown on Si(001) and Si(111) substrates by supersonic jet epitaxy. Cross-sectional high resolution scanning transmission electron microscopy (STEM) is used to study the SiC/Si interface structure and defects in the films. The occurrence of twins is evident in the selected area electron diffraction pattern taken from a SiC/Si(111) heterostructure. A 39° angle between twinned and untwinned {111} planes in the [11¯0] projection is confirmed by x-ray pole figure. Twinning is attributed to the growth on the {111} planes. Pure edge misfit dislocations are found at the interface to accommodate the extreme lattice mismatch in SiC/Si(001) heterostructures. A schematic model of the STEM image reveals that a pair of 60° dislocations intersect to form an edge misfit dislocation. A large number of stacking faults and microtwins are present in SiC thin films grown on both Si(001) and Si(111) substrates. The formation of planar defects is attributed to the coalescence of individual three-dimensional islands. Possible methods for the reduction of the planar defects are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371085
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  • 2
    Electronic Resource
    Electronic Resource
    Review of temperature measurement (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2959-2978 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A variety of techniques are available enabling both invasive measurement, where the monitoring device is installed in the medium of interest, and noninvasive measurement where the monitoring system observes the medium of interest remotely. In this article we review the general techniques available, as well as specific instruments for particular applications. The issues of measurement criteria including accuracy, thermal disturbance and calibration are described. Based on the relative merits of different techniques, a guide for their selection is provided. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305516
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  • 3
    Electronic Resource
    Electronic Resource
    Reaction rate constant of HO2+O3 measured by detecting HO2 from photofragment fluorescence (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 5027-5034 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate constant for the reaction HO2+O3→OH+2O2 was investigated in a discharge–flow system at room temperature. HO2 was produced from the reaction sequence Cl+CH3OH→CH2OH+HCl and CH2OH+O2→HO2+CH2O. HO2 was detected by the OH(A–X) fluorescence produced from photodissociative excitation of HO2 at 147 nm. A computer modeling of the reaction kinetics occurring in the flow tube was carried out to confirm that contributions from secondary reactions were negligible at low HO2 concentrations. The rate constant was determined from first order decay of HO2 in excess O3. The measured reaction rate constant of HO2+O3 is (1.9±0.3)×10−15 cm3 molecule−1 s−1, which agrees well with published data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451692
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