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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Nitrogen stabilized 〈100〉 texture in chemical vapor deposited diamond films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of nitrogen impurities in CH4/H2 gas mixtures on the structure and morphology of polycrystalline diamond films prepared by microwave plasma assisted chemical vapor deposition. The nitrogen concentration in the process gas was varied between 1 and 1000 ppm. Optical emission spectroscopy was applied to detect the nitrogen in the plasma via emission from CN radicals. The morphology and texture of polycrystalline films prepared with various N2 impurity levels and CH4 concentrations in the range 0.5%–2% was investigated using scanning electron microscopy and x-ray texture analysis. For the films prepared with low methane concentrations (e.g., 0.5%) only a minor influence of the nitrogen was observed. However, most interestingly, for higher methane concentrations (1%–2%) the addition of small amounts of nitrogen turned out to have a tremendously beneficial effect on the film morphology and structure. Films prepared without additional nitrogen are of nanocrystalline structure and of minor quality, whereas films prepared with nitrogen concentrations in the range 10–100 ppm exhibit a pronounced 〈100〉 texture and a considerably improved crystalline quality as judged by Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113064
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  • 2
    Electronic Resource
    Electronic Resource
    Doping of polycrystalline diamond by boron ion implantation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2532-2534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond films, heavily implanted with boron ions (2×1016 cm−2, 60 keV) are found to exhibit, following annealing and graphite removal, electrical properties similar to those obtained for chemical vapor deposited diamond, heavily doped with B during film growth. Control experiments in which carbon ions were implanted and annealed under identical conditions did not show any significant electrical conductivity, verifying that the measured effects are caused by chemical doping due to the presence of B. It is therefore concluded that doping of polycrystalline diamond by ion implantation is possible and graphitization along grain boundaries, that one might have expected to occur as a result of implantation and annealing, does not seem to severely affect the electrical properties of the implantation-doped material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111564
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  • 3
    Electronic Resource
    Electronic Resource
    Incorporation of nitrogen in chemical vapor deposition diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2798-2800 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the incorporation of nitrogen, diamond films were prepared by chemical vapor deposition homoepitaxially on {100} and {111} oriented diamond substrates. 50 ppm of isotopic 15N2 was added to the process gas. Nuclear reaction analysis was applied to determine quantitatively the concentration of incorporated 15N. The analysis is based on the detection of the 4.44 MeV γ-radiation of the 15N(p,α1γ)12C reaction. By a proper suppression of the γ-background, a sensitivity of better than 0.5 ppm can be achieved. The measurements reveal a preferred incorporation of nitrogen into {111} growth sectors, the 15N concentration in {111} growth sectors is by a factor of 3–4 larger than in the {100} growth sectors. The N/C ratios in the films were found to be in the ppm regime and four orders of magnitude below the N/C ratios in the gas phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114788
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  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3490-3493 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365047
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial overgrowth of 13C diamond films on diamond substrates predamaged by ion implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1720-1725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial chemical vapor deposited (CVD) 13C diamond films were grown on 〈100〉 diamond substrates predamaged by implantation with 620 keV Xe ions. The structural quality of the overgrown films was analyzed by plain-view and cross-sectional micro-Raman spectroscopy. Implantation doses below 2×1014 cm−2, for which no damage detectable by Raman spectroscopy was observed in the substrate, had no effect on the quality of the overgrown films. For doses around 4×1014 cm−2, a pronounced predamage of the diamond substrate was found which had a strong degrading effect on the quality of the overgrown layer resulting in a drastic increase of the width of the optic zone-center phonon and in the appearance of Raman scattering from sp2-bonded carbon. Higher implantation doses up to 1×1015 cm−2 resulted in a complete etch removal of the predamaged graphitic surface layer during the initial phase of CVD growth, which thus had no effect on the quality of the film produced by the subsequent overgrowth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364029
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