Notes: A reciprocating cantilever utilizing emitted charges from a millicurie radioisotope thin film is presented. The actuator realizes a direct collected-charge-to-motion conversion. The reciprocation is obtained by self-timed contact between the cantilever and the radioisotope source. A static model balancing the electrostatic and mechanical forces from an equivalent circuit leads to an analytical solution useful for device characterization. Measured reciprocating periods agree with predicted values from the analytical model. A scaling analysis shows that microscale arrays of such cantilevers provide an integrated sensor and actuator platform. © 2002 American Institute of Physics.

Notes: Silicon dioxide (SiO2)/silicon carbide (SiC) structures annealed in nitric oxide (NO) and argon gas ambiences were investigated using x-ray photoelectron spectroscopy (XPS). The XPS depth profile analysis shows a nitrogen pileup of 1.6 at. % close to the NO annealed SiO2/SiC interface. The results of Si 2p, C 1s, O 1s, and N 1s core-level spectra are presented in detail to demonstrate significant differences between NO and Ar annealed samples. A SiO2/SiC interface with complex intermediate oxide/carbon states is found in the case of the Ar annealed sample, while the NO annealed SiO2/SiC interface is free of these compounds. The Si 2p spectrum of the Ar annealed sample is much broader than that of the NO annealed sample and can be fitted with three peaks compared with the two peaks in the NO annealed sample, indicating a more complex interface in the Ar annealed sample. Also the O 1s spectrum of the NO annealed samples is narrow and symmetrical and can be fitted with only one peak whereas that of the Ar annealed sample is broad and asymmetrical and is fitted with two peaks. It is evident that the Ar annealed sample contains some structural defects at the interface, which have been removed from the interface by NO annealing as shown by O 1s spectra. The C 1s spectra at the interface reveal the subtle difference between NO and Ar annealed samples. An additional peak representing the interface oxide/carbon species is observed in the Ar annealed sample. At the interface, the N 1s spectrum is symmetrical and can be fitted with one peak, representing the strong Si(Triple Bond)N bond. However, the N 1s and C 1s XPS spectra acquired in the bulk of the dielectric showed not only the Si(Triple Bond)N bond but also a trace amount of the N–C bond. © 1999 American Institute of Physics.

Notes: The interpretation of Faraday rotation measure maps of active galactic nuclei (AGNs) within galaxy clusters has revealed ordered or coherent regions, Lmag∼50−100 kpc (∼3×1023 cm), that are populated with large, ∼30 μG magnetic fields. The magnetic energy of these coherent regions is Lmag3(B2/8π)∼1059−60 ergs, and the total magnetic energy over the whole cluster (∼1 Mpc across) is expected to be even larger. Understanding the origin and role of these magnetic fields is a major challenge to plasma astrophysics. A sequence of physical processes that are responsible for the production, redistribution, and dissipation of these magnetic fields is proposed. These fields are associated with single AGNs within the cluster and therefore with all galaxies during their AGN (active galactic nucleus or quasar) phase, simply because only the central supermassive black holes (∼108M(sun)) formed during the AGN phase have an accessible energy of formation, ∼1061 ergs, that can account for the magnetic field energy budget. An α–Ω dynamo process has been proposed that operates in an accretion disk around a black hole. The disk rotation naturally provides a large winding number, ∼1011 turns, sufficient to make both large gain and large flux. The helicity of the dynamo can be generated by the differential plume rotation derived from star-disk collisions. This helicity generation process has been demonstrated in the laboratory and the dynamo gain was simulated numerically. A liquid sodium analog of the dynamo is being built. Speculations are that the back reaction of the saturated dynamo will lead to the formation of a force-free magnetic helix, which will carry the energy and flux of the dynamo away from the accretion disk and redistribute the field within the clusters and galaxy walls. The magnetic reconnection of a small fraction of this energy logically is the source of the AGN (active galactic nucleus or quasar) luminosity, and the remainder of the field energy should then dominate the free energy of the present-day universe. The reconnection of this intergalactic field during a Hubble time is the only sufficient source of energy necessary to produce an extragalactic cosmic ray energy spectrum as observed in this galaxy, and at the same time allow this spectrum to escape to the galaxy voids faster than the GZK (blackbody radiation) loss. © 2001 American Institute of Physics.

Notes: Electron/electron instabilities arise in collisionless plasmas when the electron velocity distribution consists of two distinct components with a sufficiently large relative drift speed between them. If the less dense beam component is not too tenuous and sufficiently fast, the electron/electron beam instability is excited over a relatively broad range of frequencies. This instability is often studied in the electrostatic limit, which is appropriate at ωe/|Ωe|(very-much-greater-than)1, where ωe is the electron plasma frequency and Ωe is the electron cyclotron frequency, but is not necessarily valid at ωe/|Ωe|∼1. Here linear Vlasov dispersion theory has been used and fully electromagnetic particle-in-cell simulations have been run in a spatially homogeneous, magnetized plasma model at βe(very-much-less-than)1 and 0.5 ≤ωe/|Ωe|≤4.0. Theory and simulations (run to times of order 100ωe−1) of the electron/electron beam instability show the growth of appreciable magnetic fluctuations at ωe/|Ωe|〈2; these waves bear right-hand elliptical magnetic polarization. The simulations reproduce the well-known slowing and heating of the beam; at ωe/|Ωe|〈1 this heating is predominantly parallel to the background magnetic field, but as ωe/|Ωe| becomes greater than unity the perpendicular heating of the beam increases. The simulations also demonstrate that, for ωe/|Ωe|∼1, electromagnetic fluctuations impart to the more dense electron core component significant heating perpendicular to the background magnetic field. © 2000 American Institute of Physics.

Notes: Tunneling current measurements on n-type δ-doped Si(100) structures were carried out, with sheet doping concentrations ranging from ∼4×1012 to 2.0×1013 cm−2 at 4 K. All samples have been grown by using a low-energy ion source for antimony doping in a silicon molecular beam epitaxy system. From analysis of dI/dVg and (dI/dVg)/ (I/Vg) spectra, tunneling associated with quantized electron subbands is identified. The subband energy positions relative to the equilibrium Fermi level EF0 under zero bias were determined from the tunneling current measurements as a function of the sheet doping concentration. Self-consistent theoretical calculations of the electronic structure of δ layers have been performed, and good agreement between theory and experiment is obtained for most structures in the tunneling spectra.

Notes: We show that dynamical symmetry methods can be applied to Hamiltonians with periodic potentials. We construct dynamical symmetry Hamiltonians for the Scarf potential and its extensions using representations of su(1,1) and so(2,2). Energy bands and gaps are readily understood in terms of representation theory. We compute the transfer matrices and dispersion relations for these systems, and find that the complementary series plays a central role as well as nonunitary representations. © 2000 American Institute of Physics.

Notes: Interfacial characteristics of Al/SiO2/n-type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O2 leads to an excellent SiO2/n-type 6H–SiC interface with interface state density in the order of 1010–1011 eV−1 cm−2. NO annealing improves the SiO2/n-type 6H–SiC interface, while N2O annealing increases the interface state density. © 1997 American Institute of Physics.