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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of Er3+-doped glasses by fluorescence line narrowing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6799-6811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Stark levels of the 4I15/2 ground state manifold have been determined for Er3+-doped fluorozirconate, fluorophosphate, phosphate, and silicate bulk glasses from fluorescence-line-narrowing (FLN) measurements at 4.2 K. Splittings between adjacent Stark levels were observed to be 10–140 cm−1 and the total energy spread of the manifold was found to range from 335 to 400 cm−1. The position of a given Stark level varies up to 60 cm−1 depending on the particular Er3+ sites excited. Using the 4.2-K results, homogeneous broadening is found to be a reasonable approximation for the 300-K luminescence band of the glasses examined. Results are also presented for silica preforms as well as for a barium-zinc-lutetium-thorium fluoride composition. The FLN studies together with a Judd–Ofelt [Phys. Rev. 127, 750 (1962); J. Chem. Phys. 37, 511 (1962)] analysis of the absorption data suggest similarities in the local environment between the fluorozirconates and the high-fluorine fluorophosphates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347669
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra in an applied magnetic field for excitons bound to ionized donors in high-purity, epitaxial GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4909-4918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic-field dependence (0–6.4 T) of the photoluminescence spectra of ionized donor-bound excitons [(D+, X)] has been studied for high-purity GaAs grown by organometallic vapor phase epitaxy. Detailed data were taken on circularly polarized emission, leading to an electron-hole-coupling model which yields total angular momentum values of J=1,2. The effective magnetic-moment g values describing the substate splittings between MJ = +1 and −1 are found to be 0.86 and ≈0.5 for the J=1 and 2 states, respectively. The studies were performed on material with background, donor impurities identified as Si and Ge, yielding a chemical shift between (D+Si, X) and (D+Ge, X) of 0.15 meV at 6.4 T. Well-resolved (D+, X) features were only observed in the highest-purity material (impurity concentrations ≈ low 1014 cm−3). Some results are also reported for a layer grown by molecular-beam epitaxy whose lack of neutral-donor-related features permits the high-energy (D+, X) components to be observed at high fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349036
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  • 3
    Electronic Resource
    Electronic Resource
    Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 150-152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high purity GaAs layers with 77 K electron mobility values as high as 210 000 cm2/V s and a compensation ratio as low as ≈0.05 (NA+ND≈1014 cm−3) have been grown by organometallic vapor phase epitaxy. 4.2 K photoluminescence and magnetophotoluminescence spectra of these layers confirm their high purity. The degree of material purity and the compensation are found to be controllably dependent on the growth conditions, the optimum growth temperature being about 650 °C at a V:III ratio of 17.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99034
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  • 4
    Electronic Resource
    Electronic Resource
    Resonant photoluminescence excitation in GaAs grown directly on Si (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 213-215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with donor-related transitions. Inhomogeneous line broadening was observed for the excitonic PL lines and related to stress fluctuations. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=1 ground state to an n=2 state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100134
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra and line-shape synthesis of a conduction-band-to-deep-acceptor transition in GaAs:Sn (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4253-4258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic photoluminescence (PL) study of a deep level in liquid-phase-epitaxy-grown GaAs:Sn is presented. Experimental details and results are reported on PL spectra and decay-time measurements in the temperature range T=4.2–300 K for selected carrier concentrations between n=6×1016 and 2×1018 cm−3. Qualitative interpretation of the measured data is shown to be consistent with a conduction-band-to-deep-acceptor transition. This interpretation was further supported by synthesis of the high-temperature line shapes, using general techniques developed for analyzing free-to-bound transitions. The effects of electron-lattice interaction in the narrow-coupling limit of the initial electronic state continuum, and of inhomogeneous broadening by the random distribution of impurities, are taken into account. Values predicted for the parameters of a three-state configuration-coordinate diagram for the transition correlate well with measured T and decay-time results, as well as with estimates obtained from a moment analysis of the line shapes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337464
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoluminescence excitation spectroscopy in a magnetic field for GaAs grown on a Si substrate (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4382-4387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy in an applied magnetic field are reported for GaAs grown directly on a Si substrate by organometallic vapor-phase epitaxy. PLE features associated with interband Landau level transitions and excitonic transitions are identified. The magnetic field dependencies of the interband features are found to be in qualitative agreement with theoretical calculations. A narrow, Raman-like feature (spectral width ≤0.5 meV), observed both in PL and PLE, is identified with a process in which a donor is excited from the 1s ground state to a 2p−1 final state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343277
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  • 7
    Electronic Resource
    Electronic Resource
    Studies of free-to-bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor-phase epitaxy and molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2828-2832 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence in an applied magnetic field is shown to be useful for the identification of trace acceptor impurities in GaAs. For an epitaxial layer grown by metalorganic vapor-phase epitaxy (MOVPE), a trace concentration of zinc acceptors was detected in a sample where the zinc transitions were obscured in zero magnetic field. In material grown by molecular-beam epitaxy (MBE), the 1.47-eV transition was identified as a conduction-band-to-deep-acceptor process. Also identified was a shallow impurity, magnesium or beryllium, not detected in zero field. Resolved Landau level transitions and the magnetic splitting of conduction-band-to-acceptor transitions were observed in both MOVPE and MBE material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336937
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