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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Alkoxy sol-gel derived Y3−xAl5O12:Tbx thin films as efficient cathodoluminescent phosphors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3800-3802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film Y3−xAl5O12:Tbx3+ (YAG:Tb) phosphor derived from a sol-gel chemistry is analyzed by x-ray diffraction, scanning electron microscopy, photoluminescence (PL) and cathodoluminescence (CL). The metal alkoxides organic precursors were chosen as the starting materials to form the sol-gel. This liquid sol-gel was spin coated on sapphire and silicon substrates to form the uniform thin films, then crystallized by annealing. The PL intensity of the crystallized film at 545 nm green emission was 15 times higher than that of the as-coated noncrystalline film. CL measurements show that luminance and efficiency are comparable to the films deposited by other techniques. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378313
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced-response pyroelectric heterostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2388-2390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed enhanced pyroelectric responses in sub-100 nm, epitaxial Pb–Zr–Ti–O films contacted with conducting perovskite oxide top and bottom electrodes. These enhancements are obtained in capacitors where the bottom electrode is processed under reducing conditions. This leads to an asymmetric, temperature-dependent internal electric field that is produced within the ferroelectric capacitor and manifests itself as a strongly shifted ferroelectric hysteresis loop. Because the shifted coercive voltage lies near the unbiased operating point, the pyroelectric film has a large value of dP/dE. The product (dP/dE)/(dE/dT) gives rise to an enhanced pyroelectric response. Our data show that a 10–30 times increase in the pyroelectric response can be obtained over symmetric devices, with a concomitant improvement of the sensing figure-of-merit by three times. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316774
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    Paper (German National Licenses)
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