Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 2090-2092
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Arsenic and phosphorus are often implanted into silicon for localized doping during the processing of integrated circuits. The implant damages the silicon lattice, resulting in crystal defects during annealing. Crystal defects observed by transmission electron microscopy (TEM) appear at three different locations in patterned devices. The mechanisms underlying the generation of these defects are presented and discussed, based on an extensive study under various process conditions. These mechanisms form the basis for eliminating/reducing defects in arsenic or phosphorus implanted silicon devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109488
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