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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6149-6152 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the differential resistance by area product at zero bias (R0 A) of boron-implanted n-on-p infrared photodiodes made in x≈0.20 Hg1−xCdxTe has been measured and characterized as a function of the implanted dose assuming a simple model of the junction. The R0 A product and its functional dependence in the different temperature ranges are found to be dependent on the implanted dose in n+p as-implanted abrupt junctions. The best performance diodes are found at the lowest implanted dose. The results indicate that there is an upper limit of the R0 A, in the range where the current is controlled by a minority-carrier diffusion mechanism, that is determined in n+p junctions by the p-side contribution. However, the indicated behavior of R0 A and its functional dependence at low temperatures supports the hypothesis defended by some workers in the literature indicating that the n-side contribution to the current-voltage characteristics may be important under some conditions, such as is the case when the current is controlled by conduction mechanisms through traps in the depletion region which are related to the heavily damaged n+ layer caused by the implantation process in this material.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4118-4120 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that the reproducibility of electron beam pulses generated by a high power, cold cathode glow discharge is greatly improved by adding a small continuous keep-alive discharge current. A current of the order of 200 μA was found to limit the shot to shot current variation to within 1.5%. This stabilization in turn reduces by an order of magnitude the fluctuations of the energy density deposited on the target, demonstrating a reliable energy source for surface treatment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2648-2651 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of a plasma focus (PF) device operated at 1 kJ and 25 kV as a pulsed ion implanter is described. Samples of AISI 304 stainless steel implanted with nitrogen with this device show a reduction of wear of 42 times with respect to the implanted ones, with a reduction, at the same time of the friction coefficient. X-ray diffraction and x-ray photoelectron spectroscopy analyses of nitrided samples show the Fe2N precipitate formation, in an almost homogeneous ∼0.4-μm-thick superficial layer. The feasibility of the use of the PF as an implanter arises from these results as well as the possibility of designing and constructing similar systems that could perform the whole process (e.g., nitriding) in short time intervals (∼10 s).
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 3343-3352 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ultrafast nonradiative relaxation processes after photon excitation at 266 nm of Hg2 trapped in a cryogenic argon matrix are studied by molecular dynamics with quantum transitions. Fourteen electronic surfaces and their corresponding couplings are included in the simulations. The couplings between electronic states are modeled using a diatomics-in-molecules treatment of the mixing of the different states of Hg2 induced by the Ar atoms. While the initially excited electronic state is the D1u state, we observe that after 10 ps of dynamics most of the electronic population (90%) is in the A0g± states. The majority of nonadiabatic jumps take place in the first 2 ps of the dynamics and at large Hg–Hg nuclear distances close to the Franck–Condon region of excitation. These results confirm predictions from previous experimental steady-state spectroscopic studies. Finally, we also demonstrate the conservation of vibrational coherence of the Hg2 stretching mode during the first few picoseconds, despite several nonadiabatic crossing events during this time. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 1530-1535 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Nuclear magnetic resonance experiments on the Larmor frequency dependence of the intrapair dipolar order relaxation time T1D showed the existence of discrepancies between the usual two-spin theory and the experimental data. Field-cycling experiments of T1D in methyl deuterated para azoxyanisole (PAA-d6) in the nematic phase [J. Chem. Phys. 110, 8155 (1999)] showed that the difference cannot be assigned to the common assumption of isolated spin pairs or to the neglecting of the alkyl chain protons in the theoretical interpretation. Though the applicability of the spin temperature and short correlation time assumptions have not been justified for nematic liquid crystals, they have been used in all the available theoretical approaches for dipolar order relaxation. In this work, we calculate T1D of PAA-d6 within the Redfield high-temperature theory of spin–lattice relaxation but avoid the usual assumptions of short correlation times and random phase. First, we find that this fact does not alter the expression for T1D in the simple case of an ensemble of isolated spin pairs. Then we take the four benzene protons as the spin system and find that this refinement gives no relevant contribution able to explain the discrepancies between theory and experiments. Also, we find that the random phase assumption becomes redundant in the calculation of T1D, whenever the relevant spin Hamiltonian is nondegenerate. Thus, in these cases the spin temperature hypothesis is justified in liquid crystals, where the spin system contains few spins. We conclude that the Redfield high-temperature relaxation theory fails to describe T1D in thermotropic liquid crystals, since it underestimates the prominent role of the slow cooperative motions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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