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  • 1
    Electronic Resource
    Electronic Resource
    Interface-mediated amorphization of coesite by 200 keV electron irradiation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2570-2574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363920
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of irradiation-induced amorphizaton of Gd2Ti2O7 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1989-1991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation-induced evolution of the microstructure of Gd2Ti2O7, an important pyrochlore phase in radioactive waste disposal ceramics and a potential solid electrolyte and oxygen gas sensor, has been characterized using transmission electron microscopy and x-ray photoelectron spectroscopy. Following the irradiation of a Gd2Ti2O7 single crystal with 1.5 MeV Xe+ ions at a fluence of 1.7×1014 Xe+/cm2, cross-sectional transmission electron microscopy revealed a 300-nm-thick amorphous layer at the specimen surface. X-ray photoelectron spectroscopy analysis of the Ti 2p and O 1s electron binding energy shifts of Gd2Ti2O7 before and after amorphization showed that the main results of ion-irradiation-induced disorder are a decrease in the coordination number of titanium and a transformation of the Gd–O bond. These features resemble those occurring in titanate glass formation, and they have implications for the chemical stability and electronic properties of pyrochlores subjected to displacive radiation damage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402647
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  • 3
    Electronic Resource
    Electronic Resource
    Ion irradiation-induced amorphization in the Al2O3–SiO2 system: A comparison with glass formation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 587-593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ion beam-induced crystalline-to-amorphous transition has been investigated for crystalline phases in the Al2O3–SiO2 system: Al2O3, SiO2 (quartz), Al2SiO5 (kyanite, andalusite, sillimanite), and 3Al2O3⋅2SiO2 (mullite). Xe+ 1.5 MeV was used to irradiate samples at temperatures from 15 to 1023 K in situ in a transmission electron microscope to determine the critical amorphization doses. The susceptibility to amorphization is (highest to lowest): quartz, sillimanite, kyanite, andalusite, mullite, and alumina. These data are compared to viscosities and activation energies for viscous flow of melts in this system. The doses required for amorphization by ion irradiation are related to the viscosities of the melts. The activation energies for irradiation-enhanced annealing are qualitatively correlated with the activation energies of viscous flow. These results suggest a parallel between ion beam irradiation-induced amorphization and glass formation. Glass-forming "ability'' correlates with susceptibility to radiation-induced amorphization. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364219
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