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  • American Institute of Physics (AIP)  (77)
Document type
Publisher
  • American Institute of Physics (AIP)  (77)
  • Springer  (3)
Years
  • 1
    Electronic Resource
    Electronic Resource
    Evaluating the effects of optical and carrier losses in etched-post vertical cavity lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5871-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the combined effects of optical scattering loss and surface recombination (or carrier diffusion) on the performance and scalability of etched-post vertical cavity lasers (VCLs). The size dependence of optical losses and threshold gain are determined from pulsed measurements of external quantum efficiency. Deeper etch depths result in a stronger radial dependence of the threshold gain, which quickly increases the threshold current density. With optical loss accounted for, pulsed threshold current density measurements give the extra information needed for evaluating carrier loss. Surface recombination or carrier diffusion also results in threshold current density increases, but scalability is ultimately limited by the ability of the active region to provide enough gain for smaller size, higher optical loss devices. Even with these losses, three-quantum-well VCLs with shallow etches have threshold currents as low as 420 μA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360588
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  • 2
    Electronic Resource
    Electronic Resource
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357279
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of surface recombination on carrier distributions and device characteristics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3208-3215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the effects of surface recombination on carrier distributions and device characteristics. The conventional approach assumes a constant surface recombination velocity in the calculation of the surface recombination current and carrier distributions. In this paper, we use the Shockley–Reed–Hall recombination mechanism to calculate the surface recombination rate without resorting to the use of a surface recombination velocity. The current continuity equation and Poisson's equation are solved simultaneously for the carrier distributions, current density, and electric field in the bulk. The effects of surface recombination and surface charged states are included explicitly in the boundary conditions and charge neutrality equation. As a result of the inclusion of the surface charged states in the calculation, acceptor, donor, and compensating surface trap states can easily be included in our model. We calculate the influence of surface recombination on the performance of ridge-type devices and show that appropriate surface delta doping can be used to effectively reduce the surface recombination current for an uncompensated surface. We also compare our results to those obtained from a simple model which is based on a constant surface recombination velocity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360009
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  • 4
    Electronic Resource
    Electronic Resource
    High-efficiency and low-threshold InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357408
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  • 5
    Electronic Resource
    Electronic Resource
    Self-aligned Si-Zn diffusion into GaAs and AlGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1855-1858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A practical technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs has been developed. It is found that the use of a Si film alone for self-aligned Si-Zn diffusion is subject to serious problems of morphology degradation and doping contamination during the process of the Si diffusion. A procedure combining the use of a SiO2 film as an encapsulant with a sputtered Si film as source for Si diffusion and mask for Zn diffusion is investigated in detail. Optimum thicknesses of the Si and SiO2 films are determined to be 180 and 550 A(ring), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341761
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  • 6
    Electronic Resource
    Electronic Resource
    Contribution of the band-filling effect to the effective refractive-index change in double-heterostructure GaAs/AlGaAs phase modulators (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4548-4553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we have theoretically estimated the effective refractive-index variation Δneff due to the removal of carriers in the depletion region of a double-heterostructure (DH) n-AlGaAs/n-GaAs/p-AlGaAs phase modulator when a reverse bias is applied to this structure. Δneff is calculated by a Kramers–Kronig analysis of the absorption spectrum, which changes around the absorption edge because of the band-filling effect associated with the presence of carriers. We also calculated the phase shift Δφ due to Δneff, and we showed that this contribution due to the band-filling effect can account for up to 28% of the total phase shift for a specific DH structure, showing in this way that the band-filling effect can no longer be ignored in the analysis of phase modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339048
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  • 7
    Electronic Resource
    Electronic Resource
    Electrorefraction in GaAs and InGaAsP and its application to phase modulators (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2430-2433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Kramers–Kronig analysis is used to calculate the refractive index change induced by changes in the shape of the fundamental absorption edge when a strong electric field is applied to a semiconductor. Calculations are made for GaAs and InGaAsP over the 0.9 to 1.55 μm wavelength range. For GaAs, we find that the electrorefraction is Δn=7.9×10−4 at λ=1.06 μm when the electric field is 400 kV/cm, but decreases to Δn=1.3×10−4 at λ=1.55 μm for the same electric field strength. For wavelengths far below the band gap, the refractive index change has a quadratic dependence on the applied electric field. The electrorefraction effect will have important applications for optical waveguide phase modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337912
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  • 8
    Electronic Resource
    Electronic Resource
    Sputtered silicon as a new etching mask for GaAs devices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1218-1220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a sputtered silicon film as a new type of etching mask is reported for the first time. Its desirable properties arise because of similar material characteristics (thermal expansion coefficient, crystal structure, smaller misfit factors) and different etching behavior as compared to gallium arsenide. These properties are studied and utilized in the fabrication of GaAs/GaAlAs double heterostructure (DH) ridge waveguide devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337370
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  • 9
    Electronic Resource
    Electronic Resource
    Behavior of SiNx films as masks for Zn diffusion (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 828-831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The detailed behavior of SiNx films as masks for Zn diffusion into GaAs at both low and high temperatures has been investigated. It is found that the film behavior as a mask is a function of the refractive index of the SiNx mask film and that a film with index n=2.06 shows optimum performance at both 650 and 950 °C. The experimental results suggest that the film with n=2.06 is nearly stoichiometric. Possible reasons for this optimized masking behavior are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339714
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of geometric effects for the guide/antiguide intensity modulator (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4455-4457 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of geometric dimensions, such as the modulation length L, the central guide width W, and the gap G between the central guide and antiguide regions for the performance of the guide/antiguide intensity modulator have been examined. Both theoretical predictions and experimental measurements are reported here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352186
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