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  • American Institute of Physics (AIP)  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Optically enhanced electron attachment to thiophenol (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6275-6289 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Enhanced electron attachment to KrF excimer laser irradiated thiophenol (C6H5SH) molecules has been studied in a electron swarm experiment using nitrogen as the buffer gas. Two distinct electron attachment processes were found to be responsible for the observed large enhancement in electron attachment under different experimental conditions. One enhanced electron attachment process occurred immediately (within a few μs) after laser irradiation and is shown to be due to dissociative electron attachment to electronically excited thiophenol molecules in their first excited triplet state produced indirectly via excited singlet states reached by excimer laser irradiation. At low mean electron energies (∼0.1 eV), up to 5 orders of magnitude enhancement in electron attachment has been observed for the triplet state compared to the ground electronic state. This enhanced electron attachment decreased with (i) increasing nitrogen pressure due to quenching of the first excited singlet state of thiophenol (precursor of the triplet state) by nitrogen, and (ii) increasing time delay between laser irradiation and subsequent electron attachment to the laser-irradiated molecules. This latter observation is shown to be due to the self-(triplet–triplet) quenching of the electron attaching triplet state molecules. The second observed enhanced electron attachment process occurred at longer times (〉100 μs) after laser irradiation and is attributed to the electron attachment to diphenyl disulfide (C6H5SSC6H5) produced by the interaction of thiophenoxy radicals (C6H5S (overdot)) formed directly or indirectly via laser irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456344
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced electron attachment to superexcited states of saturated tertiary amines (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 274-287 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron attachment measurements on excimer–laser-excited superexcited states (SES) of saturated amine compounds, and in particular on triethylamine (TEA), have been carried out employing a new experimental technique. A rate equation analysis based on a proposed model shows that the electron attachment rate constant for the SES is several orders of magnitude larger than that for the ground electronic state. The proposed mechanism for electron attachment to SES involves the capture of a near-zero-energy electron—(produced by the same laser pulse that produces the SES)—by a superexcited molecule to form a transient parent anion which subsequently dissociates producing a stable fragment anion. The similarity of the above mechanism to an electron-excited Feshbach resonance is indicated and a scheme for the identification of molecular systems that can be excited (via resonance-enhanced multiphoton excitation) to SES is outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461484
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced negative ion formation in ultraviolet-laser irradiated silane: Implications for plasma deposition of amorphous silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2571-2573 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observation of enhanced electron attachment to ArF-excimer-laser irradiated silane is reported. Evidence is presented that highly excited electronic states of silane or its photofragments are responsible for the observed enhanced electron attachment. Since such electronically excited states may be produced in silane plasmas (by direct electron impact or by excitation transfer via metastable states of rare gases that are commonly used in silane discharges), the possible significance of this electron attachment process for negative ion formation in silane plasmas is indicated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112642
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of temperature on electron attachment to and negative ion states of CCl2F2 (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 8304-8310 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of temperature on electron attachment to dichlorodifluoromethane (CCl2F2) has been investigated for temperatures up to 500 K and for mean-electron energies from thermal to 1.0 eV using an electron swarm method. The measurements were made in mixtures of CCl2F2 with nitrogen. The electron attachment rate constant increases with temperature over the entire temperature and mean-electron energy range investigated. The variation of the thermal value of the electron attachment rate constant with temperature compares well with earlier measurements of this quantity and shows an increase by a factor of 10 when the temperature is raised from 300 to 500 K. From a comparison of published data on the electron affinity, electron attachment using the swarm method, electron attachment using the electron beam method, electron scattering, electron transmission, indirect electron scattering, and related calculations, the lowest negative ion states of CCl2F2 have been identified with average positions as follows: a1(C–Clσ*) at +0.4 eV and −0.9 eV, b2(C–Clσ*) at −2.5 eV, a1(C–Fσ*) at −3.5 eV, and b1(C–Fσ*) at −6.2 eV; an electron-excited Feshbach resonance is also indicated at −8.9 eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477493
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