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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of InGaAs–GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 497-501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable angle spectroscopic ellipsometry (VASE) technique is used to measure the optical constants of InGaAs/GaAs multiple quantum well (MQW) structures for the purpose of designing tunable optical modulators. The VASE measurements also include field-induced changes in index of refraction and absorption. These measured changes in MQWs are in agreement with theoretical computations. In addition, the design and simulated performance of an InGaAs/GaAs MQWs Fabry–Perot modulator using the VASE data is presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364125
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  • 2
    Electronic Resource
    Electronic Resource
    High-temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1284-1291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the structural and electrical characteristics of thin-film tungsten and reactively sputtered tungsten nitride (WNx) Schottky contacts to GaAs under high-temperature annealing conditions (with annealing temperatures ranging from 700 to 850 °C) in an arsenic-overpressure and flowing nitrogen ambient with and without a silicon dioxide capping layer. Compositions of the WNx films measured by Rutherford backscattering spectrometry and proton resonant scattering techniques indicate a linear relationship between x and the nitrogen partial pressure during sputtering. Glancing angle x-ray diffraction studies revealed that for nonzero nitrogen partial pressure, the as-deposited films were amorphous, and after annealing these films converted to polycrystalline W2 N and W phases. A surface layer of W2 As3 phase was also observed after As-overpressure capless annealing and was believed to be the result of reactions between W and the ambient As gas. Electrical measurements showed that all WNx /GaAs contacts (with x=0–0.5) were thermally stable up to an annealing temperature of 850 °C. A diode edge effect is observed for WNx /GaAs diodes cap annealed in As overpressure at temperatures higher than 800 °C. The maximum achievable Schottky barrier heights for these contacts were found to be independent of the nitrogen content in the films but are influenced by the annealing conditions. We also explored the role played by nitrogen on the thermal stability and barrier height of the contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341847
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1099-1102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid-state reactions between (100) GaAs substrates and Rh films ∼150 A(ring) and ∼600 A(ring) thick, annealed at temperatures between 300 and 800 °C, are investigated with conventional and heavy ion Rutherford backscattering spectrometry, and x-ray diffraction. Initiation of interface reactions between the Rh films and the GaAs substrate is observed at ∼300 °C. Laterally segregated RhGa, RhAs, and RhAs2 phases are detected for the 150-A(ring) Rh/GaAs contact annealed in the temperature range of 300–700 °C. For thick Rh film (∼600 A(ring)) on GaAs, vertical phase separation between the RhGa and the Rh-As phases is observed after annealing. After annealing at 700 °C for 20 min, the reaction between the 600-A(ring) Rh film and GaAs is complete and a layer sequence of RhGa/RhAs2/GaAs results. Electrical properties of Rh/n-GaAs diodes are measured using the current voltage dependence. A correlation between the electrical behavior and the metallurgical reaction is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338205
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  • 4
    Electronic Resource
    Electronic Resource
    Schottky barrier degradation of the W/GaAs system after high-temperature annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3235-3242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: W/GaAs diodes annealed at temperatures ranging from 100 to 900 °C were investigated with current voltage (I-V) and capacitance voltage (C-V) techniques, Rutherford backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. Improvements in the diode characteristics were observed after annealing at temperatures below 600 °C. Noticeable degradation in the rectifying behavior of the diodes occurred after annealing at temperatures 〉600 °C. Correlations between the electrical degradation and the interdiffusion of W and GaAs at the interface were found. Our results strongly suggest that the in-diffusion of W leads to the formation of a diffused, highly resistive region near the W/GaAs interface. The high resistance of this region is believed to be caused by the compensation of the substrate dopants by tungsten acceptors. Annealing the diodes at temperatures 〉850 °C resulted in reactions between W and GaAs. The W-GaAs reaction leads to islands of W2As3 at the W/GaAs interface, resulting in physical breakdown of the W/GaAs diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337744
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  • 5
    Electronic Resource
    Electronic Resource
    High contrast Fabry–Perot optical modulator using quantum confined Stark effect tuning in InGaAs-GaAs multiple quantum well cavity (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 296-298 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunable Fabry–Perot modulators, consisting of strained InGaAs-GaAs multiple quantum well (MQW) layers, have been shown to yield a contrast over 1200:1. Tuning is achieved by varying the index of refraction of the MQW layers forming the cavity using a quantum confined Stark effect. The mirrors are realized by AlAs-GaAs quarter wave λ/4 dielectric stacks having 12 and 15.5 periods, respectively. The device has the potential of achieving even higher tunable contrast ratios when the number of periods of the λ/4 mirrors are increased. A contrast ratio of 6000:1 has been achieved for a nontunable structure. Measured data on optical transmission and contrast ratio are presented for various wavelengths as a function of applied bias. Results of simulation of transmitted output are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110083
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  • 6
    Electronic Resource
    Electronic Resource
    Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289266
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  • 7
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    The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-05-07
    Description: A dense, homogeneous and crack-free ferroelectric PZT thin film with 〈100〉-preferred orientation was produced using the sol-gel method. The volume fraction α (100) of 〈100〉-oriented grains in the PZT film was calculated [ α (100) ≈ 80%] from XRD of the PZT thin film and powder. The PZT thin film exhibits an open polarization vs. electric field loop and a low leakage current density from 10 −8 A/cm 2 to 10 −7 A/cm 2 . The electrical conduction data were fit to a Schottky-emission model with deep traps from 100 kV/cm to 250 kV/cm. A modified capacitance model was introduced that adds electrical domain capacitance based on a metal-ferroelectric-metal (MFM) system with Schottky contacts. The model reproduces the observed non-linear capacitance vs. voltage behavior of the film.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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