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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2048-2052 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A first adaptive x-ray mirror prototype was built in 1992 and is now installed on the ESRF beamline 2 (Materials Science). This system consists of a water-cooled 1 m long Pt-coated Si mirror, supported by two rows of 11 piezoelectric actuators. The shape of the mirror is continuously monitored by an optical analyzer; its readout being used by a feedback loop in a real-time algorithm. A workstation associated to real-time electronics calculates the relevant parameters for driving the actuators as a function of both the desired shape and the possible thermal deformation due to the incident beam. Preliminary experiments carried out on the wiggler beamline showed that the system runs correctly: the feedback loop permits a control of the mirror shape in the microrad range at a frequency of 10 Hz. Various shapes (cylinder, parabola, or ellipse) can be produced at will to within the above accuracy. The different components of the device are described and the alignment and calibration procedures are discussed. The first results dealing with the properties of the reflected beam (size, divergence, and shape) versus both the calibration quality and the incoming power are presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2232-2234 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Regarding x-ray mirror design and fabrication, the unique properties of the ESRF source push specifications far beyond the obtainable limits of current technology. In order to keep control of the high quality of optical beamline components, interferometric based metrology capabilities are mandatory. This paper describes the ESRF metrology facility in which four complementary systems permit complete analysis of the quality of x-ray optical components. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1655-1656 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 371-373 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented crystalline layers of Bi4(Sr,Ca)3Cu4O16+x high Tc superconductors were produced by the devitrification of aerosol suspensions of glasses prepared from the mixed oxides when the suspensions were brought into rapid contact with heated silver substrates. The best magnetic susceptibility signals, produced by superconductivity at 77 K, were obtained when the glass was rapidly heated to about 850 °C from room temperature. The deposited layers are composed of a nearly pure superconductive phase in the form of flat platelets up to several hundred microns in diameter that are oriented with the c axis normal to the substrate. The addition of a small amount of Pb to the glass lowers the optimum deposition temperature and improves the crystal morphology.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2211-2213 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: It is shown that using the secondary breakdown effect of a bipolar transistor, often called an avalanche transistor, the large input capacitance of a power MOSFET may be charged very quickly. A power MOSFET driven by an avalanche transistor is used to generate electrical pulses of 〉800 V into 50 Ω with rise times of approximately 3 ns. The output pulse amplitude can be varied by adjusting the drain-source voltage of the power MOSFET. The trigger delay of this circuit is approximately 5 ns, with jitter of 〈100 ps. This circuit has been used to generate pulses at a repetition rate of greater than 1 kHz.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3286-3288 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Operation of the trapped plasma avalanche transit time (TRAPATT) diode in the time domain is presented. When operated in the time domain, pulses with amplitudes greater than 1,000 V and risetimes well under 300 ps can be achieved. Selection of a diode for use as a TRAPATT diode is discussed. Experimental results demonstrate pulse generation with an amplitude of 2000 V into 50 Ω and a risetime of 200 ps using a single diode and a power MOSFET driving circuit.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1863-1868 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The capabilities of the transmission electron microscope have been extended to enable in situ studies of the interaction of atomic oxygen with various solids to be performed. This has been accomplished by modifying the specimen chamber region of a JEOL 200CX TEM/STEM electron microscope to accommodate a specially designed environmental cell and specimen heating stage. With this arrangement it is possible to continuously observe changes in the appearance of a specimen as it undergoes reaction with a beam of atomic oxygen. In this paper a description of the technique will be presented together with some applications which highlight its advantages over conventional transmission electron microscopic post-reaction examinations.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1031-1036 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characteristics of a bipolar junction transistor operating in the avalanche region and then triggered into current mode second breakdown are formulated. If the time the BJT is subjected to secondary breakdown is limited the BJT may be used as a nanosecond, high voltage switch without sustaining damage. Several methods of fast pulse generation, electrical and optical, using this mode of operation are discussed. A 2000 V pulse generator, into 50 Ω, with a risetime of approximately 1 ns, jitter 〈100 ps, is then designed using these results.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5799-5801 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A reliable circuit configuration is described for stacking power metal–oxide semiconductor field effect transistors (MOSFETs). The resulting circuit has a hold off voltage N times larger than a single power MOSFET, where N is the number of power MOSFETs used. The capability to switch higher voltages and thus greater amounts of power, into a 50 Ω load, in approximately the same time as a single device is realized. Design considerations are presented for selecting a power MOSFET. Using the design method presented, a 1.4 kV pulse generator, into 50 Ω, with a 2 ns rise time and negligible jitter is designed.
    Type of Medium: Electronic Resource
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