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  • 1
    Electronic Resource
    Electronic Resource
    Examination of a generalized model for radiationless energy transfer in dyes. Comparisons of theory and experiments (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 2892-2897 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A modified general model for radiationless energy transfer is examined. The model does not rely on selection criteria and is intended to apply over the range of diffusion and resonance energy transfer parameters normally encountered in quenching experiments. Experimental data is compared with theoretical predictions and found to confirm the model's validity for a wide range of physical conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456959
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  • 2
    Electronic Resource
    Electronic Resource
    Comprehensive examination of radiationless energy transfer models in dyes: Comparisons of theory and experiment (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 1484-1491 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Experimental data on radiationless energy transfer, covering a wide range of physical conditions, was compared with predictions developed from three different theoretical models, to define and determine their respective validities and range of applicability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456091
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  • 3
    Electronic Resource
    Electronic Resource
    Optical refractive and reflective properties of resonantly absorbing media (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 3838-3845 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Experiments on the reflection of polarized monochromatic laser light at the planar interface of resonantly absorbing medium and the air were made for a variety of situations, including Brewster's angle in the spectral vicinity of the resonance wavelength. An ethanolic solution of Rhodamine B, an organic laser dye luminofor with a well defined resonance absorption spectrum, was chosen as the absorbing medium. The tunable polarized output of a cw dye laser was used to provide the collimated monochromatic beam. To compare the experimental results with theory, the Fresnel reflectivity equations combined with the Kramers–Kronig relations were used to predict the reflectance in terms of the known absorption coefficient. The experimental results generally confirm the theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456869
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  • 4
    Electronic Resource
    Electronic Resource
    Two-frequency dye laser with accurately controllable frequency difference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2936-2939 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modification carried out inside a dye laser cavity in order to obtain simultaneous oscillation at two frequencies is described. The frequency difference is accurately tunable from zero to beyond 200 GHz and the system places no restriction on the operating wavelength (which is determined by the type of dye used).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142183
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  • 5
    Electronic Resource
    Electronic Resource
    Empirical depth profile simulator for ion implantation in 6Hα-SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6194-6200 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon carbide is a semiconductor material suitable for a variety of specialized devices. Implantation profiles of 30–300 keV B, Al, N, and As in 6Hα-SiC are reported. The profiles, measured by secondary-ion-mass spectrometry, are fit with Pearson-IV curves which require knowledge of the first four moments of the distribution. The moments of the impurity distributions are extracted from the experimental data and fit to simple functions of the ion energies. Thus, an accurate implantation depth profile simulator, based on experimental data for the common dopants in 6Hα-SiC, is developed. This method results in a more accurate implant simulator than is obtained using conventional first-principles calculations, primarily due to channeling considerations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359146
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  • 6
    Electronic Resource
    Electronic Resource
    Thermodynamics of the diluted classical spin Heisenberg chain with single ion anisotropy (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3560-3560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermodynamics of a one-dimensional diluted Heisenberg magnet of classical spins in the presence of single ion anisotropy is calculated. This model is representative of systems such as (CD3)4NMnxCu1−xC13 and CsMnxMg1−xBr3. The magnetization susceptibility, energy, and specific heat are determined as functions of the magnetic concentration and single ion anisotropy for both ferromagnetic and antiferromagnetic couplings. Spin-spin correlation functions and the elastic scattering function are also calculated for various values of anisotropy and spin concentration in these systems. The solutions presented are obtained as sums over the properties of finite length chains weighted by their probabilities of occurrence in the diluted system. UFaipxr UFc15xr UFRULEF a)Permanent address: Department of Physics, Nankal University, Tianjin, People's Republic of China.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340717
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental study of nonlinear current-voltage behavior in undoped polycrystalline silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2419-2421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conduction data from undoped low-pressure chemically vapor deposited polycrystalline silicon thin films at room temperature and above are presented. The physical mechanisms pertinent to general current-voltage characteristics are experimentally interrogated from three different viewpoints. In the nonlinear current-voltage region, the sheet resistance Rs is shown to vary drastically depending on the device aspect ratio for given applied electrical field E¯. The nonscalability of Rs with respect to E¯, the temperature behavior of Rs, and the photoconductivity data indicate that the nonlinear current-voltage behavior cannot be attributed to field-enhanced conductivity. Other possible mechanisms responsible for observed nonlinearity are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337154
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  • 8
    Electronic Resource
    Electronic Resource
    Boron and aluminum implantation in α-SiC (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the comparison of experimental implantation profiles in 6Hα-silicon carbide (SiC) with the theoretical results obtained using the widely used trim profile simulator. Our results for the projected range of Al and B implanted into this material agree well with those predicted by trim, in contrast to previously published results. Profiles for 40–250 keV Al and B implantation, off-crystal axis to minimize channeling in SiC, are obtained using secondary ion mass spectroscopy. The Pearson I and VI theoretical profiles, constructed using the first four moments of the distribution generated by the trim simulator, are then compared to the experimental ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113076
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  • 9
    Electronic Resource
    Electronic Resource
    Violet light emitting SrS/SrCl:Eu thin-film electroluminescent devices (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 7-9 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Emission of bright (over 9 cd/m2) violet light centered at 404 nm has been achieved from SrS:Eu thin-film electroluminescent (EL) devices. The brightness has remained stable after several hours of operation. The source of this light is believed to be the 5d–4f transition of Eu2+ in the SrCl2 host, which is formed near the ZnS/SrS interfaces within the sandwich structure of the EL devices. Similar device structures were also utilized to produce ultraviolet EL emission at 367 nm from SrCl2:Ce3+ layers. These devices were grown via atomic layer epitaxy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115514
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  • 10
    Electronic Resource
    Electronic Resource
    Activation of ion implanted dopants in α-SiC (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 712-714 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, activation of implanted dopants in 6Hα-SiC using a pulsed excimer laser is reported. Commercially available substrates are implanted with nitrogen or aluminum. A 308 nm pulsed excimer laser is then used to anneal the samples which are held at room temperature. Point contact current-voltage (PCIV) measurements are used to extract the carrier concentration of the annealed layers. Initial results suggest complete activation of the implanted dopants. Pulsed laser annealing of ion implanted SiC appears to be an attractive option as compared to furnace annealing at high temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114108
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