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  • 11
    Electronic Resource
    Electronic Resource
    Structural characterization of epitaxial Co–Ag : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6247-6249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co–Ag granular films are prepared by molecular-beam epitaxy to enable a detailed structural study to be conducted in conjunction with magnetotransport properties. It is demonstrated that the shape, size, location, and segregation of the magnetic Co grains and the morphology of the surface depend on the growth temperature. Detailed transmission electron microscopy reveals inherent differences between samples prepared at room temperature and those prepared at high temperature. Small clusters of only a few atoms are found to be present in the matrix of the low-temperature samples significantly affecting the spin diffusion length. Well-crystallized regions of both Co and Ag are found in the high-temperature samples, however, the Co grains remain relatively small in size even at the highest growth temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362020
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  • 12
    Electronic Resource
    Electronic Resource
    Ferromagnetic nanocomposite films of cobalt in a ceramic matrix formed by thermal decomposition of cobalt nitride, CoN, precursor (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7905-7910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cobalt nitride films, CoN, in a pure form and also as a nanocomposite in boron nitride or silicon nitride were generated by reactive sputtering of cobalt metal, cobalt boride, or cobalt silicide as targets, respectively, in a nitrogen plasma. Cobalt nitride decomposes into the elements by heating under vacuum at 500 °C. The nanostructure of the composites was preserved in the heating treatment thus creating a fine dispersion (〈10 nm) of cobalt particles, in a ceramic matrix. The magnetic properties of the nanocomposites were established. The precursor cobalt nitride is paramagnetic while the cobalt dispersions, having dimensions smaller than single magnetic domain, show characteristics typical of those systems such as superparamagnetism and, at temperatures lower than the blocking temperature, marked hysteresis. The coercive fields at 5 K for the BN and Si3N4 nanocomposites are 3250 and 850 Oe, respectively. These films are of interest as data recording media.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362402
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  • 13
    Electronic Resource
    Electronic Resource
    Characteristics of surface acoustic wave propagation in III-V semiconductor quantum well structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5002-5007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of surface acoustic waves (SAWs) in AlGaAs/GaAs and InGaAs/InP quantum well structures is modeled using a Laguerre polynomial approach to determine the effects of the quantum well parameters (layer thickness, layer composition, and number of layers) on the induced potential, electric field, particle displacement, and strain. These characteristics show that variations of the electric field within regions of the structure of interest for device applications can be brought about, and are of use for the design of devices based on SAW interactions in quantum well structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359726
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  • 14
    Electronic Resource
    Electronic Resource
    Control of composition and structure for molybdenum nitride films synthesized using ion beam assisted deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5138-5143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The purpose of the research described in this article was to synthesize molybdenum nitride films with well-defined structures and stoichiometries using ion beam assisted deposition (IBAD). Approximately 400 nm thick films were prepared by the evaporative deposition of molybdenum while simultaneously bombarding the growing film with low energy (250–1000 eV) nitrogen ions. The effects of ion-to-atom arrival rate ratio, ion angle of incidence, and ion energy on the film composition and phase constituents were examined. The film nitrogen to molybdenum stoichiometry increased linearly with increasing arrival rate ratio irrespective of the ion energy and varied significantly with changes in the ion angle of incidence. The latter was interpreted based on sputtering and reflection effects. The phase constituents were functions of all of the deposition parameters investigated. We propose that a single parameter, the effective energy density per deposited atom, can account for the effects of ion energy, mass, and angle of incidence. The effective energy density is approximately the ion energy divided by the ion range. The range incorporates the effects of ion mass and angle of incidence, as well as the energy. For low energy ions the energy density per depositing atom is proportional to E1/2, a dependence that it shares with other models that have been developed to account for phase formation during IBAD. The advantage of the energy density treatment is that it has a more obvious influence on the temperature in the growth zone, a factor controlling phase formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359257
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  • 15
    Electronic Resource
    Electronic Resource
    Clustering in erbium-doped silica glass fibers analyzed using 980 nm excited-state absorption (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4472-4478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonsaturable component to the 980 nm excited state absorption (ESA) is found in Er3+-doped silica glass fibers. This anomalous behavior of the ESA provides a way of quantitatively characterizing the degree of clustering in these glasses. It is found that the degree of clustering is greater for higher Er3+ concentrations, and is significantly reduced with the addition of aluminum to the glass. With this method it is also found to be possible to distinguish between true clustering and the occurrence of closely spaced Er3+ pairs in a random distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357278
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  • 16
    Electronic Resource
    Electronic Resource
    Molecular slip at the solid-liquid interface of an acoustic-wave sensor (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3448-3462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular slip is expected to occur at the interface between the surface of a bulk-acoustic-wave quartz chemical sensor and a liquid with which it is in contact. A new property of the interface, called the interfacial slip parameter, accounts for molecular slip. It is introduced in the theory of the sensor-liquid system by generalizing the no-slip boundary condition. The interfacial slip parameter is a complex-valued quantity which is defined as the displacement of a particle of liquid in contact with the sensor surface divided by the displacement of a particle on the surface of the sensor. The theoretical expression for the impedance of the sensor is derived in terms of the interfacial slip parameter. The impedance of the sensor is measured by the network analysis method for hydrophilic and hydrophobic surfaces in contact with water-glycerol solutions. The experimental values of impedance are fitted to the theory by nonlinear regression analysis to find the interfacial slip parameter. A mechanical model of molecular slip is devised which explains the variation of the interfacial slip parameter with the viscosity of the liquid. The results indicate that there is some slip in low-viscosity liquids, near the viscosity of water, and very little slip in liquids of high viscosity, near that of glycerol.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357475
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  • 17
    Electronic Resource
    Electronic Resource
    Effects of finite junction length on the vortex-flow transistor (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3662-3667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Volt-ampere characteristics of the Josephson junction vortex-flow transistor were studied through comparison of experiment and numerical simulation. Fine structure in the flux flow branch, which is not predicted by a simple particle model for flux flow, is shown to be quantized in voltage. The quantization results from the interaction of the flux wave with the junction's cavity resonances. It is shown that the separation of the voltage states is proportional to the maximum operating frequency of the device. In an amplifier circuit, quantization in the output voltage will reduce the dynamic range of the device by adding quantization noise. Hysteretic switching between states produces distortion. Possible device modifications for removing the quantization are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356081
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  • 18
    Electronic Resource
    Electronic Resource
    Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 765-770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band gap modification in Ne+-ion implanted In1−xGaxAs/InP (x=0.25, 0.33, 0.40, 0.47, 0.54, 0.61, 0.69) and InAsyP1−y/InP (y=0.32) quantum well structures has been studied by low temperature (12 K) photoluminescence spectra. The maximum usable high temperature anneal for inducing the compositional intermixing using an InP proximity cap is found to be ∼700 °C for 13 s. A second low-temperature (300 °C) anneal, following the high-temperature (700 °C) anneal, is found to induce greater band gap changes than the simple one-step anneal at 700 °C. The changes are found to be approximately proportional to the difference of bandgap energy between the well and the barrier materials; the proportionality coefficient increases with ion dose and reaches a maximum at a dose of ∼2×1013 cm−2. At higher doses, the proportionality coefficient decreases. The band gap changes are explained qualitatively based on the InGaAsP binary composition diagram. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364440
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  • 19
    Electronic Resource
    Electronic Resource
    A magneto-optical study of interdiffusion in InGaAs/InP quantum wells: Effects of heat treatment, substrates, and dopants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6826-6833 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion in InGaAs/InP quantum wells has been studied using magneto-optical transmission spectroscopy. The effects of dopants in the substrates and quantum wells, overgrowth and annealing processes have been investigated, providing useful information on the interdiffusion effects in typical growth and fabrication processes. The blue shift effect which is often observed in multiple quantum well (MQW) structures subjected to heat treatment, is attributed to a dominant group V interdiffusion which can be suppressed by high defect densities in the substrate. The presence of Zn-dopants in an overgrown layer on top of the MQW structures causes a counteractive redshift effect after long annealing times due to group III diffusion, but in situ Zn- or S-dopants produce no observable shift in transition energies due to interdiffusion. This is attributed to enhanced group III interdiffusion induced by Zn diffusion into the MQWs. We conclude that there are very different interdiffusion mechanisms for group III and group V elements and support the recent suggestion of vacancy-related group V interdiffusion in contrast to the interstitialcy mechanism for the group III interdiffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361504
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  • 20
    Electronic Resource
    Electronic Resource
    Pulsed laser induced epitaxial crystallization of carbon–silicon alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4118-4123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonequilibrium Si1−xCx alloys produced by pulsed laser induced epitaxy from ion implanted Si have been studied in the concentration range from 0.35 to 3.8 at. % C. Films were formed by multiple energy ion implantation of carbon into {001} Si to produce nearly uniform composition profiles, followed by irradiation with a 308 nm, 30 ns excimer laser pulse. Heteroepitaxy proceeded from the underlying {001} Si through the carbon containing layer at approximately 5 m/s. Transmission electron microscopy, Fourier transform infrared spectroscopy, high resolution x-ray diffraction, ion channeling, and secondary-ion mass spectrometry were used to characterize the structure and composition. At low concentrations, the films are fully strained and the carbon is substitutional. At concentrations exceeding 1.4 at. % C, SiC precipitates were observed and the substitutional carbon concentration decreased. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361775
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