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  • 1
    Electronic Resource
    Electronic Resource
    Effect of reagent rotation on product energy disposal in the light atom transfer reaction O(3P)+HCl(v=2,J=1,6,9)→OH(v',N')+Cl(2P) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2704-2712 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A rovibronic-state-to-rovibronic-state experiment has been performed on the reaction O(3P)+HCl(v=2,J=1,6,9)→OH(v',N')+Cl(2P). The O(3P) atoms are produced with a known energy by photolysis of NO2. The HCl(v=2,J) molecules are prepared by IR excitation of thermal HCl using an optical parametric oscillator. All energetically accessible OH rovibrational product levels are probed by laser-induced fluorescence for each prepared HCl rotational level. The OH(v'=0,N') rotational distribution shows a dip at N'=11, the depth of which decreases with increasing HCl rotational excitation. The available energy of reaction is partitioned so that 40% appears as OH vibration (V'), 32% as OH rotation (R'), and 28% as product translation (T'). This energy partitioning does not change with HCl rotation, in contrast to the general expectation for light atom transfer reactions of approximate conservation of internal angular momentum (R→R'). A substantial vibrational inversion is observed, in agreement with the vibrational adiabaticity (V→V') expected for such reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459845
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of the Ca+HF(DF) and Sr+HF(DF) reaction dynamics (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 6283-6294 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A comparative study of the reaction family, Ca and Sr with rovibrationally selected HF or DF, has been carried out under single-collision conditions. A thermal beam of the alkaline earth atoms, Ca or Sr, is fired into a low-pressure gas of HF or DF in which the reagent molecules have been prepared in a selected vibration–rotation state by the use of a tunable infrared light source (optical parametric oscillator). The resulting alkaline earth monofluoride reaction products, CaF or SrF, are detected in a quantum-state-specific manner with a tunable visible light source (dye laser) using laser induced fluorescence. The HF molecule is aligned with its rotational angular momentum pointing preferentially either along or perpendicular to the metal atom beam. For both Ca+HF(v=1) and Sr+HF(v=1) the cross section and the product state distribution are found to be independent of the approach geometry, which is consistent with reaction through a bent transition state. The state-to-state reaction dynamics for Ca+HF(DF) and Sr+HF(DF) show marked differences. The Ca+HF(DF)→CaF+H(D) reaction has attributes of a statistical internal energy distribution, whereas Sr+HF(DF)→SrF+H(D) shows some deviation from this behavior. The findings for Ca+HF(DF) are consistent with a model in which the Ca atom inserts into the HF bond to form a long-lived H–Ca–F intermediate; the findings for Sr+HF(DF) are interpreted as competition between direct reaction and reaction which samples the deep H–Sr–F potential well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455393
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  • 3
    Electronic Resource
    Electronic Resource
    Study of the Kerr effect of CoxAg100−x granular films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5121-5123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of CoxAg100−x granular films was annealed at 100, 250, 400, and 500 °C, respectively. Both the dielectric function and polar Kerr effect were measured using a spectroscopic ellipsometer and a magneto-optical Kerr spectrometer in the 1.5–4.5 eV photon energy range. It was found that the Kerr effect was greatly enhanced with increasing annealing temperature, especially for those samples having low Co compositions. After annealing, the strong resonance peaks appear in the 3.7–4.1 eV range. For the typical sample with x=6, the maximum Kerr rotation angle is about 0.26° near 4.0 eV after annealing at 500 °C. Through data analysis, the large negative peak at about 3.85 eV is attributed to the plasma edge of Ag, and the positive peak near 4.0 eV is attributed to the new magneto-optical structure and the properties of the granular film. The larger short-wavelength Kerr effect will be useful for increasing magneto-optical data-storage density. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369097
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  • 4
    Electronic Resource
    Electronic Resource
    An inexpensive STM conversion to a BEEM (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3799-3801 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ballistic electron emission microscopy (BEEM) is a relatively new technique enabling spectroscopic investigation of subsurface interface structures and electronic properties. BEEM is a direct, nondamaging method with nanometer spatial resolution. In this paper, an inexpensive modification to a conventional scanning tunneling microscope, converting it to a BEEM, is presented. BEEM performance is significantly affected by the preamplifier and the low-pass filter, which is used to improve the signal-to-noise ratio. The system is tested on a thin Au metallization to (100) Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145440
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  • 5
    Electronic Resource
    Electronic Resource
    Ge composition and temperature dependence of the deposition of SiGe layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5382-5384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiH4 and GeH4 deposition of Si1−xGex layers by a rapid thermal process very low pressure chemical vapor deposition method has been studied in this paper. The Ge incorporation rate increases to a maximum value and then decreases as temperature increases. The growth rate of the SiGe alloy reaches its maximum value and then decreases as Ge composition increases. Ge incorporation also enhances the Si deposition rate in the Si1−xGex alloy. These results have been explained by increasing the hydrogen desorption rate at low temperatures and low value of x (the germanium concentration) and decreasing the adsorption probability of reactive hydrides at high temperature and high value of x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356989
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  • 6
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance properties in granular type (Co–Ag)/Ag multilayers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 900-904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The giant magnetoresistance of sputtered granular type (Co–Ag)/Ag multilayers with different Co content and sublayer thickness' was studied. With an increasing Ag layer thickness, the magnetoresistance ratio ΔR/R first increases to reach a maximum and then decreases. With an increasing Co content in the magnetic layers, the maximum shifts towards a large Ag layer thickness. These phenomena can be attributed to the antiferromagnetic coupling between the Co clusters in neighboring Co–Ag layers. With an increasing Co–Ag layer thickness, ΔR/R increases monotonically for a small Co content in the magnetic layers, while for a large Co content, a maximum appears at a small magnetic layer thickness. It is suggested that the interplay of spin dependent scattering and the shunting effect in the Co–Ag layers results in the above thickness dependence. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366775
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  • 7
    Electronic Resource
    Electronic Resource
    Study of magneto-optical properties of Ni:SiO2 granular films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5118-5120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of NixSiO2(1−x) granular films was prepared by ion sputtering, and some of them were annealed. Both the complex dielectric function and magneto-optical polar Kerr spectra of the samples were measured in the 1.5–4.5 eV photon energy range at room temperature. There are broad peaks in the 2.5–3.5 and 3.2–4.5 eV range in the Kerr rotation and ellipticity spectra, respectively. The Kerr intensities increase with increasing Ni composition. For sample x=0.65, the Kerr peaks are redshifted, with reduced intensities after annealing. Both the off-diagonal terms of the dielectric tensor and the optical constants are attributed to enhancement of the Kerr effect in a particular spectral range for the metal–insulator granular films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369096
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  • 8
    Electronic Resource
    Electronic Resource
    New design of the variable angle infrared spectroscopic ellipsometer using double Fourier transforms (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2677-2683 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of incidence-angle-variable infrared spectroscopic ellipsometer working in the 2100–10 000 wave number range has been designed and constructed. For the system, the analyzer and polarizer were driven by two microstepping motors having hollow shafts and rotating synchronously with a speed ratio of 2:1, i.e., A=2P. The incidence angle can be varied from 30° to 90° with an accuracy of 0.01°. The doubled Fourier transforms as both functions of the wave number and the azimuthal angles of the polarizer and analyzer were carried out and integrated in the system. Two sets of ellipsometric parameters measured in the experiment have been used to test the data self-consistency of the system. In data reduction, the error arising from the slight anisotropy of the stray light was corrected. In application, the complex dielectric function of the Au film was measured with a data accuracy better that 1% in the entire spectral range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150674
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of a new ordered structure in GeSi/Si strained layer superlattice (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 79-80 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new kind of ordered structure in the GeSi sublayer of GeSi/Si superlattice. X-ray diffraction of GeSi/Si superlattice exhibits extraordinary peaks of 1/2(111), 3/2(111), (222) on (111) sample, and (200) on (100) sample. This shows that the germanium and silicon atoms in the GeSi sublayer are ordered due to the strain rather than randomly distributed in bulk GeSi alloy. Two coexisting models of order have been suggested for the (111) sample. The atoms in the ordered structure are aligned as Ge-Si-Ge-Si and Ge-Si-Si-Si along the (111) axis. The relative ratio of the two models has been calculated for the experimental result. The ordered structure may have significant effect on the band structure and optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107619
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  • 10
    Electronic Resource
    Electronic Resource
    Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3454-3456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO buffer layers have been used in the hydride vapor phase epitaxy of GaN in order to improve the initial nucleation and growth of the GaN and hence the subsequent materials properties. The specific role of the ZnO buffer layer was investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The improvements in the GaN growth behavior are attributed to the formation of a thin surface layer of ZnAl2O4 that results from a reaction-diffusion process between the ZnO and Al2O3. This layer can provide an improved lattice match to GaN as well as change in surface energy affecting the initial growth of the GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126675
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