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  • Articles  (2)
  • American Institute of Physics (AIP)  (2)
  • 1
    Publication Date: 2016-11-01
    Description: In this paper, the ITO-stabilized ZnO thin films with a hybrid-phase microstructure were introduced, where a number of nanocrystals were embedded in an amorphous matrix. The microstructural and optical properties of thin films were investigated. It was found that the grain boundary and native defect issues in the pristine polycrystalline ZnO could be well suppressed. Meanwhile, such thin films also possessed relatively smooth surface and high transmittance in the visible range. Afterwards, the corresponding staggered top-gate thin-film transistors (TFTs) were fabricated at a temperature of 300 °C and exhibited fairly high electrical characteristics, especially with a field-effect mobility of nearly 20 cm 2  V −1  s −1 and a subthreshold swing as low as 0.115 V/decade. In addition, the electrical uniformity and the stability of devices were also examined to be excellent. It is expected that the staggered top-gate TFTs with hybrid-phase microstructural ITO-stabilized ZnO channels are promising in the next-generation active-matrix flat panel displays.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Publication Date: 2014-11-05
    Description: The magnetic and dielectric polarization properties of the single crystal samples of CuFe 1− x Ga x O 2 ( x  = 0 and 0.02) are investigated. Experimental results show that the magnetization and dielectric polarizations are anisotropy and coupled together. Compared with pure CuFeO 2 , in the case with the magnetic field parallel to the c axis, a field-induced phase transition with a hysteresis is clearly observed between the five-sublattice (5SL) and three-sublattice (3SL) phases. Specially, an obvious spontaneous dielectric polarization is observed in CuFe 0.98 Ga 0.02 O 2 in a lower magnetic field region, indicating that the Ga doping has an effect on the enhancement of spontaneous dielectric polarization. Based on the dilution effect, change of exchange interaction, and partial release of the spin frustration due to the structural modulation of the Ga ion dopant, the origin of the magnetization, and spontaneous polarization characteristics are discussed and the complete dielectric polarization diagrams are assumed.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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