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  • 1
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    Tables and graphs of measurements made across four Cape Cod beaches 1957-1958 (2014)
    Woods Hole Oceanographic Institution
    Details
    Publication Date: 2022-05-26
    Description: Originally issued as Reference No. 61-4, series later renamed WHOI-.
    Description: The primary purpose of this report is to present tables of measurements made across four Cape Cod beaches.
    Description: The field work was supported entirely by the Geography Branch of the Office of Naval Research under contract number Nonr-1254 (00) (NR-388 - 018).
    Keywords: Beaches
    Repository Name: Woods Hole Open Access Server
    Type: Technical Report
    Format: application/pdf
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  • 2
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    Erosion of the cliffs of Outer Cape Cod : tables and graphs (2014)
    Woods Hole Oceanographic Institution
    Details
    Publication Date: 2022-05-26
    Description: Originally issued as Reference No. 64-21, series later renamed WHOI-.
    Description: The following tables and graphs place in convenient storage the results of several years of careful surveying and at the same time provide rudimentary interpretation of resuIts by comparing erosion rates. The reader will find listed in the bibliography pertinent published papers which analyze these coastal erosion data in great detail.
    Description: This work has been supported by the Geography Branch of the Office of Naval Research, Contract Number Nonr 1254 (00), (NR-388-018), and by Nonr 2196 (00).
    Keywords: Erosion ; Coast changes
    Repository Name: Woods Hole Open Access Server
    Type: Technical Report
    Format: application/pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Calculation of relative free energy via indirect pathways (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3808-3816 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A general method is presented to reduce the simulation time required to compute the relative free energy between two states X and Y of a molecular system by computer simulation. Although the free energy difference ΔAx→y is, in principle, independent of the pathway chosen to change X into Y, in practice its choice strongly affects the accuracy of the obtained ΔA value. The optimum path is the one for which the relaxation time of the system τsystem attains a minimum, allowing the system to remain as close as possible near equilibrium during a simulation. Downscaling the relevant parts of the potential energy function before the change from X to Y is made, and upscaling afterwards is a rather general way to shorten τsystem and thus save computing time. For a model system of butane like molecules the proposed procedure is more than 1 order of magnitude more efficient than the conventional technique of direct interconversion from state X to state Y.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459753
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  • 4
    Electronic Resource
    Electronic Resource
    Picosecond time-resolved surface-lattice temperature probe (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1508-1510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond reflection high-energy electron diffraction is used as a time-resolved surface-lattice temperature probe. A picosecond laser pulse is split into two beams. The first interacts with the sample. The second activates the cathode of an electron gun creating a collimated and focused electron pulse that is well synchronized with the heating laser pulse. The electron pulse is used to generate a reflection high-energy electron diffraction pattern of the sample. Since heating results in an intensity reduction of the elastically scattered electrons (Debye–Waller effect), the diffraction pattern provides information on the surface temperature as well as structure. Time-resolved measurements of the picosecond laser-heated surface show general agreement with a heat diffusion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103378
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of Al on GaAs(001): Observation of interfacial submonolayer structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1753-1755 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submonolayer structure has been observed using reflection high-energy electron diffraction during room-temperature deposition of Al onto (2×4) reconstructed GaAs(001) surfaces prepared by molecular beam epitaxy. This structure with a (4×1) symmetry occurs after ∼0.25 monolayer of Al deposition. It is growth-rate independent, reproducible, and stable. This result shows that there is a strong, directionally dependent adatom-adatom interaction at submonolayer coverages.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102207
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  • 6
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing and regrowth of thermal donors in silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3495-3502 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing (RTA) of 450° thermal donors in Si at temperatures between 600 and 1000 °C and their subsequent regrowth between 375 and 450 °C have been investigated by infrared absorption and resistivity measurements. Thermal donors for small oxygen clusters identified by their excited state absorption are present in as-grown Czochralski Si, whereas a large range of cluster sizes are observed after extended heating at 450 °C. The temperature required for RTA is lower when only small clusters are present. Removal of thermal donors by RTA restores 5–8 oxygen atoms to interstitial sites per electrically measured donor removed, which supports oxygen cluster models for thermal donors. Restoration of oxygen to interstitial sites upon removal of thermal donors also impacts models treating relationships between thermal donors and oxygen precipitation in Si. An activation energy of 2.5±0.2 eV is obtained for RTA removal of thermal donors, consistent with oxygen diffusion. Initial regrowth of thermal donors after RTA at 1000 °C occurs with an activation energy of 1.7±0.2 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336820
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum picosecond laser-driven electron diffraction system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1636-1647 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A laser-driven picosecond time-resolved electron diffraction system operating in ultrahigh vacuum is described. A picosecond laser pulse is split into two beams. The first interacts with the sample under study. The second activates the cathode of an electron gun creating a collimated and focused electron pulse that is well synchronized with the heating laser pulse. By spatially delaying the part of the laser pulse that photoactivates the cathode from that which irradiates the sample, the electron pulse can be set to arrive at the sample at a specific time after sample irradiation. When a flat smooth sample is aligned such that the electrons are in grazing incidence on its surface, a reflection high-energy electron diffraction pattern of its first few atomic layers is generated. Analysis of the diffraction pattern provides information on the surface structure and temperature at a set time lapse between the arrival of the laser and the electron pulse to the sample. Design, characterization, and operation of this system along with an example of its application to monitor the transient surface temperature using the surface Debye–Waller effect are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141126
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen sulfide plasma passivation of gallium arsenide (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 716-717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 °C plasma enhanced chemical vapor deposition (PECVD) SiO2 film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiO2 cap. Improved C-V characteristics were observed, showing interface trap densities in the high 1011 cm−2 eV−1 range. Photoluminescence (PL) measurements on the sulfided samples showed increased intensity over the untreated samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106547
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  • 9
    Electronic Resource
    Electronic Resource
    Thermally annealed silicon nitride films: Electrical characteristics and radiation effects (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2040-2047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics, including retention under 60Co γ-ray irradiation of MNOS (metal-nitride-oxide-semiconductor) structures with LPCVD (low-pressure chemical-vapor-deposited) silicon nitride have been investigated. Capacitance-voltage techniques were used to measure injected, retained, and equilibrium charge. Current-voltage techniques were used to measure voltage and temperature dependence of charge transport. Measurements were made on MNOS with the following nitride annealing histories: (1) as-deposited at 750 °C, (2) 950 °C in N2, and (3) 950 °C in N2 followed by 900 °C in H2. Internal IR reflection techniques were used to measure chemically bonded hydrogen in the nitride films. Annealing at 950 °C in N2 (1) decreased the concentration of hydrogen, (2), decreased equilibrium positive charge, and (3) increased low- and high-field transport. Partial restoration of the as-deposited characteristics was achieved by subsequent annealing in H2 at 900 °C. Charge loss (retention) under 60Co γ-ray irradiation is essentially independent of high-temperature annealing whereas degradation is observed for net negative charge retention measured in the absence of ionizing radiation. Effects of annealing on MNOS structures and models to explain the results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334393
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  • 10
    Electronic Resource
    Electronic Resource
    Towards phase transferable potential functions: Methodology and application to nitrogen (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 2272-2285 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We describe a generalizable approach to the development of phase transferable effective intermolecular potentials and apply the method to the study of N2. The method is based on a polarizable shell model description of the isolated molecule and uses experimental data to establish the parameters. Consideration of the Ne dimer shows this to be a conceptual advance over point polarizability descriptions of atomic interaction. Our parametrization of N2 accurately describes not only the molecule's electrostatic field (i.e., a practical representation of the molecular charge distribution) but also its response to electrical and mechanical stress (polarization and deformation). The purely intermolecular terms in our potential reflect shell-shell interactions. These are parametrized by fitting properties of the low temperature solid phase of nitrogen. We derive a phase transferable potential able to account for the second virial coefficient of the gas phase, the pressure induced phase transition between nitrogen's cubic and tetragonal phases, and a wide range of liquid properties (pair distribution function, heat of vaporization, self-diffusion coefficient and dielectric constant). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469703
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