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  • American Institute of Physics (AIP)  (6)
  • The Federation of American Societies for Experimental Biology (FASEB)  (1)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1846-1850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal stress and strain in boron-doped diamond films grown by microwave plasma chemical vapor deposition (MWCVD) and hot filament CVD (HFCVD) were studied as a function of boron concentration. The total stress (thermal+intrinsic) was tensile, and the stress and strain increased with boron concentration. The stress and the strain measured in HFCVD samples were greater than those of MWCVD samples at the same boron concentration. The intrinsic tensile stress, 0.84 GPa, calculated by the grain boundary relaxation model, was in good agreement with the experimental value when the boron concentration in the films was below 0.3 at.%. At boron concentrations above 0.3 at.%, the tensile stress was mainly caused by high defect density, and induced by a node-blocked sliding effect at the grain boundary. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 729-732 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoresistivity of polycrystalline p-type diamond films has been studied. The films were grown by microwave plasma assisted chemical vapor deposition and in situ doped with different concentrations of boron. A four-point electrical measurement was performed to evaluate the film resistivity change upon straining in a four-point bending beam setup. Films were glued directly onto a stainless steel beam and the silicon substrates were selectively removed. A gauge factor (relative change of the resistivity divided by the elastic strain) of about 690 under 100 microstrains was obtained at room temperature for a film doped with 32 ppm boron. With increasing temperature and dopant concentration the gauge factor increases. The experimental results obtained are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3044-3048 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistive effects were studied in p-type heteroepitaxial diamond films with a strip or Corbino disk structure in a magnetic field ranging from 0 to 5 T. The films were grown by microwave plasma chemical vapor deposition and boron doped by cold ion implantation and rapid thermal annealing. The experimental results show that the magnetoresistance (MGR) of p-type heteroepitaxial diamond films strongly depends on the geometric form of the samples and the magnetic field. Diamond films are assumed to be an isotropic isothermal solid in which conduction is by holes from light, heavy and split-off bands. Based on the Fuchs and Sondheimer thin-film theory, considering spherical energy surfaces and mixed scattering by lattice vibrations and ionized impurities and surface, a theoretical description of the magnetoresistive effect in diamond films is presented by solving the Boltzmann transport equation in the relaxation time approximation. A relationship between the MGR and the thickness of films, magnetic field, and mobility is shown. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1086-1088 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model based on semi-empirical molecular orbital calculations and molecular mechanics is proposed for oriented textured diamond film growth on the Si(111) surface. The diamond 〈111(approximately-greater-than) axis in our model is parallel to the silicon substrate 〈111(approximately-greater-than) while the diamond 〈11¯0(approximately-greater-than) is rotated 10.89° around the 〈111(approximately-greater-than) axis referenced to the 〈11¯0(approximately-greater-than) of the silicon substrate. The atomic density of the grown diamond in one dimension perpendicular to the 〈111(approximately-greater-than) has a ratio 1.003:1 to that of a natural crystal, and thus is much better than the 1:1.015 of the heteroepitaxial diamond on the silicon (001) surface. We conjecture that this improvement in lattice match is important to achieve single-crystal growth. A model for heteroepitaxial growth with a diamond 〈111(approximately-greater-than)//Si〈111(approximately-greater-than) and diamond 〈11¯0(approximately-greater-than)//Si〈11¯0(approximately-greater-than) relationship is also studied but is found to have poorer bonding to the substrate and has a larger residual mismatch of 1:1.015. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1682-1684 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of continuous diamond thin films by bias-assisted hot filament chemical vapor deposition onto hexagonal boron nitride films prepared by plasma chemical vapor deposition on silicon substrates. Negative substrate biasing during the early stages of diamond growth greatly increased the nucleation density. Values of 1010 cm−2 were achieved at −250 V for bias times as short as 25 min. After the nucleation stage, high quality polycrystalline continuous diamond films, as revealed by scanning electron microscopy and Raman analysis, were grown under standard hot filament deposition conditions. © 1997 American Institute of Physics.
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  • 6
    Publication Date: 2015-03-06
    Description: This study sheds light on the effect of alumina on dielectric constant and dielectric loss of novel CaCu 3 Ti 4 O 12 composite ceramics. Alumina, at several concentrations, was deposited on the surface of CaCu 3 Ti 4 O 12 particles via sol-gel technique. The dielectric constant significantly increased for all frequencies and the dielectric loss substantially decreased for low and intermediate frequencies. These observations were attributed to the change in characteristics of grains and grain boundaries. It was found that the insulating properties of the grain boundaries are improved following the addition of Al 2 O 3 . The relative density of CaCu 3 Ti 4 O 12 /Al 2 O 3 composite ceramics decreased compared to the pure CaCu 3 Ti 4 O 12 and the grain size was greatly changed with the alumina content affecting the dielectric properties. With the addition of alumina into CaCu 3 Ti 4 O 12 , tighter interfaces formed. The 6%- and 10%-alumina ceramics showed the minimum dielectric loss and the maximum dielectric constant, respectively. Both the dielectric constant and loss tangent decreased in the 20%-alumina ceramic due to the formation of CuO secondary phase. It was revealed that Al serves as an electron acceptor decreasing the electron concentration, if Al 3+ ions substitute for Ti 4+ ions, and as an electron donor increasing the electron concentration, if Al 3+ ions substitute for Ca 2+ ions. We established a processing-microstructure-properties paradigm which opens new avenues for novel applications of CaCu 3 Ti 4 O 12 /Al 2 O 3 composite ceramics.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 7
    Publication Date: 2016-03-02
    Description: Failure of lens fiber cell denucleation (LFCD) is associated with congenital cataracts, but the pathobiology awaits elucidation. Recent work has suggested that mechanisms that direct the unidirectional process of LFCD are analogous to the cyclic processes associated with mitosis. We found that lens-specific mutations that elicit an unfolded-protein response (UPR) in vivo accumulate p27(Cdkn1b), show cyclin-dependent kinase (Cdk)-1 inhibition, retain their LFC nuclei, and are cataractous. Although a UPR was not detected in lenses expressing K6W-Ub, they also accumulated p27 and showed failed LFCD. Induction of a UPR in human lens epithelial cells (HLECs) also induced accumulation of p27 associated with decreased levels of S-phase kinase-associated protein (Skp)-2, a ubiquitin ligase that regulates mitosis. These cells also showed decreased lamin A/C phosphorylation and metaphase arrest. The suppression of lamin A/C phosphorylation and metaphase transition induced by the UPR was rescued by knockdown of p27. Taken together, these data indicate that accumulation of p27, whether related to the UPR or not, prevents the phosphorylation of lamin A/C and LFCD in maturing LFCs in vivo, as well as in dividing HLECs. The former leads to cataract and the latter to metaphase arrest. These results suggest that accumulation of p27 is a common mechanism underlying retention of LFC nuclei.—Lei, L., Whitcomb, E. A., Jiang, S., Chang, M.-L., Gu, Y., Duncan, M. K., Cvekl, A., Wang, W.-L., Limi, S., Reneker, L. W., Shang, F., Du, L., Taylor, A. Unfolded protein response–associated stabilization of p27(Cdkn1b) interferes with lens fiber cell denucleation, leading to cataract.
    Print ISSN: 0892-6638
    Electronic ISSN: 1530-6860
    Topics: Biology
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