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  • 1
    Electronic Resource
    Electronic Resource
    An arc discharge nitrogen atom source (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2994-3000 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An intense nitrogen atom beam source of simple construction, with easy handling and maintenance was built and tested. Nitrogen atom beams with an intensity estimated to be 1019 atom/sr s and with an average kinetic energy of 0.8–2 eV in the forward direction were obtained. This novel atom source can be successfully ignited using pure nitrogen gas and operated stably during several hours of continuous performance. The temperature-rise effect of calorimetric sensors due to the bombardment of the N atom beam was used to analyze the intensities and kinetic energies of nitrogen atom beams. The emission spectra from the arc also show that a high concentration of atomic nitrogen was produced using this source. Experiments such as the nitrogen atom beams interacting with substrates to form a TiON film and a carbon nitride film indicate the high concentration of atomic nitrogen in the beam. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148232
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of C60 films by partially ionized fullerene beams (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4142-4144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: C60 films have been deposited by partially ionized cluster beam deposition in which a C60 beam is partially ionized by electron impact and then accelerated by an acceleration field Va towards the substrate where the films are deposited. The experimental results show that the ionized C60 molecules in the evaporated beam are fragmented upon collision with the substrate under the elevated accelerating fields Va. Particularly, as Va exceeds about 400 V, almost all the C60 molecules including ionized and unionized ones are broken into fragments in the deposition films and the resulting films turn out to be amorphous carbon layers, as indicated by the measurements of Raman spectra, x-ray diffraction, and ellipsometry. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359504
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic and mechanical properties of carbon nitride films prepared by laser ablation graphite under nitrogen ion beam bombardment (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1361-1363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride films have been formed on Si(100) substrates by laser ablation of graphite under a low energy nitrogen ion beam bombardment. Data of Raman shift and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. Time-of-flight measurements suggest the existence of paracyanogen-like materials, such as C4N4, in the films. High energy backscattering spectrometry has shown that the percentage of N content in the film is 41% or so. The x-ray diffraction and transmission electron micrograph measurements have also been taken to characterize the crystal properties of the obtained films. Qualitative tests indicate the films of high Vickers hardness Hv, and of good adhesion to the silicon substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112052
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  • 4
    Electronic Resource
    Electronic Resource
    Light emission of C60 embedded in porous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 783-785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated samples with C60 implanted into porous silicon with the ionized cluster beam deposition approach for improving the light emission of C60. We have obtained intense and well-resolved photoluminescence spectra under excitation of Ar+ laser (514.5 nm) at room temperature. The depth analysis of secondary ion mass spectroscopy showed that C60 had been incorporated into porous silicon. A large number of fine-structure peaks in the photoluminescence spectrum indicated the strong coupling of vibrational progressions with electronic states of C60 induced by the interaction between C60 molecule and nanometer-sized silicon particles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115466
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  • 5
    Electronic Resource
    Electronic Resource
    Study of the growth of thin nitride films under low-energy nitrogen-ion bombardment (1994)
    Springer
    Applied physics 58 (1994), S. 395-399 
    Details
    ISSN: 1432-0630
    Keywords: 41.80.Gg ; 68.55.−a ; 79.60.Eq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Bombardment of silicon surfaces by low-energy (300–1000 eV) nitrogen ions has been investigated as a potential process for growing ultrathin films at relatively low temperatures (〈500°C). The thicknesses and chemical states of the obtained films are analysed using ellipsometry, X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES). All the analyses show that ultrathin (∽ 60 Å) silicon nitride films have been directly grown on silicon substrates. Detailed studies of the influence of different process parameters on the obtained films have been carried out. The thicknesses of the obtained films appear to increase with ion energy. The nitridation is found to be a rapid process which can be divided into two steps. The thicknesses are also observed to vary slightly with substrate temperature. The average active energy of nitridation rates is about 3.5 meV which indicates nonthermal process kinetics. For AES analysis, the films are found to be nitrogen-rich ones with the stoichiometric factor x≈1.7 larger than that of pure silicon nitride (x=1.33). In both AES and XPS studies, the chemical state of the silicon atoms resembles the existence of silicon oxynitride films of low oxygen concentration. The growth mechanism is also discussed briefly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323616
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon-nitride films deposited by low-energy ion-beam bombardment (1995)
    Springer
    Applied physics 61 (1995), S. 643-644 
    Details
    ISSN: 1432-0630
    Keywords: 73.61.Ng ; 41.75 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin silicon-nitride films have been synthesized on silicon substrates by low-energy nitrogen-ionbeam bombardment. The thicknesses of the obtained films are found to increase slightly with the duration of bombardment. Capacitance-voltage and current-voltage characteristics of silicon-nitride films prepared at different bombarding times show that the density of damages, charges in the films and interface states, the capacitance of the obtained ultrathin silicon-nitride films, the flat-band capacitance and the flat-band voltage increase with the duration of the bombarding process. The results of these analyses suggest a short bombarding processing for such a silicon-nitridation technique proposed here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01542876
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  • 7
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon-nitride films deposited by low-energy ion-beam bombardment (1995)
    Springer
    Applied physics 61 (1995), S. 643-644 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 73.61.Ng; 41.75; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Ultrathin silicon-nitride films have been synthesized on silicon substrates by low-energy nitrogen-ion-beam bombardment. The thicknesses of the obtained films are found to increase slightly with the duration of bombardment. Capacitance–voltage and current–voltage characteristics of silicon-nitride films prepared at different bombarding times show that the density of damages, charges in the films and interface states, the capacitance of the obtained ultrathin silicon-nitride films, the flat-band capacitance and the flat-band voltage increase with the duration of the bombarding process. The results of these analyses suggest a short bombarding processing for such a silicon-nitridation technique proposed here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01542876
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  • 8
    Electronic Resource
    Electronic Resource
    Inertial effects of hypoelastic cylindrical bar of grade zero under simple extension of constant velocity (1991)
    Springer
    Acta mechanica solida Sinica 4 (1991), S. 89-99 
    Details
    ISSN: 0894-9166
    Keywords: hypoelasticity ; grade zero ; tension with constant velocity ; inertial effects ; cylindrical bar
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper an analytical solution for finite deformation at the simple extension of a hypoelastic cylindrical bar of grade zero under constant velocity is obtained. It is found that the difference between stress-strain curves at different tensile velocities is only due to the inertial terms in the solution. The axial stress due to inertia increases with the square of ratio of tensile velocities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02208113
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of coupled-mode flutter of pipes conveying fluid on the elastic foundation (2000)
    Springer
    Applied mathematics and mechanics 21 (2000), S. 1177-1186 
    Details
    ISSN: 1573-2754
    Keywords: elastic foundation ; pipe conveying fluid ; coupled-mode flutter ; stability ; power series method ; 0353
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Mathematics , Physics
    Notes: Abstract The governing equation of solid-liquid couple vibration of pipe conveying fluid on the elastic foundation was derived. The critical velocity and complex frequency of pipe conveying fluid on Winkler elastic foundation and two-parameter foundation were calculated by power series method. Compared with pipe without considering elastic foundation, the numerical results show that elastic foundation can increase the critical flow velocity of static instability and dynamic instability of pipe. And the increase of foundation parameters may increase the critical flow velocity of static instability and dynamic instability of pipe, thereby delays the occurrence of divergence and flutter instability of pipe. For higher mass ratio β, in the combination of certain foundation parameters, pipe behaves the phenomenon of restabilization and redivergence after the occurrence of static instability, and then coupled-mode flutter takes place.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02458996
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