GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Radio-frequency bias effects on SiO2 films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1847-1855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radio-frequency (rf) bias on the chemical, physical and electrical properties of SiO2 films deposited by distributed electron cyclotron resonance plasma enhanced chemical vapor deposition have been investigated. The rf bias power densities used here are relatively low (≤0.3 W/cm2) compared to that used by other researchers, but their influences on deposition processes and on film properties are apparent: the deposition rate decreases with increasing rf bias; the in situ relaxation process of the oxide and the observed surface polish effects have been found to be caused by ion bombardment. The most important effects of the rf bias are on the electrical properties of the deposited films. In particular, a SiO2 film without net fixed charges may be deposited with a low rf bias. It is also shown that the increase in interface trap density with rf bias power is not caused by ion bombardment but to the electron injection from the Si substrate towards the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357705
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Structural modification of ion-implanted and postannealed polycrystalline diamond studied by transmission electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1465-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363014
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of boron doping on the crystal quality of chemical vapor deposited diamond films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as well as it improves crystallinity of the resulting films. A comparative study of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in cathodoluminescence (CL) is significantly intensified by boron incorporation. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that boron incorporation during CVD growth of diamond films can lead to better crystal quality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116336
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    High-resolution electron microscopic study of the interface between diamond film and its substrate (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 328-330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution electron microscopic (HREM) study of the interface structure between diamond film and its silicon substrate has been carried out. The HREM images reveal that there is an amorphous layer between diamond film and its substrate for a sample grown by the hot filament chemical vapor deposition. β-SiC crystallites are embedded in this amorphous layer. The HREM images of cross-sectional specimens reveal that the diamond crystallites can nucleate directly on either the intermediate amorphous layer, the β-SiC crystallites, or at some scratches of the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110060
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Thin films of the protonic conductor gadolinium-doped barium cerate by solid-source metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3104-3106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gadolinium-doped barium cerate thin films have been grown on r-plane (11¯02) sapphire and on silver foil substrates by single solid-source metalorganic chemical vapor deposition using tetramethylheptanedionate mixed powder sources. The films have been deposited at 800 °C at a reduced pressure of 6 Torr. The bulk conductivity of the thin films, as measured by an alternating current impedance method, is close to that of sintered ceramic samples, and shows a similar hydrogen/deuterium isotope effect, providing evidence of protonic conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111361
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Carbon nanofibers synthesized by decomposition of alcohol at atmospheric pressure (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 526-528 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present study, we fabricated the carbon nanofibers (CNFs) by decomposition of methyl alcohol at atmospheric pressure. The CNFs were grown on Ni/Si substrates using simplified hot-filament chemical vapor deposition equipment. The deposits mainly consist of the semicrystalline CNFs, in which a few of carbon nanotubes are included. On the 30-nm-thick Ni/Si substrates, the mean length of the CNFs is 2–3 μm, and their average diameter is less than 100 nm. The as-deposited CNFs were evaluated by both scanning and transmission electron microscopes. The field-electron-emission properties of CNFs were characterized as well. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494102
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Polarity determination by atomic location by channeling-enhanced microanalysis (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 389-391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, an alternative approach to determine the polarity of GaN thin films based on the atomic location by channeling-enhanced microanalysis technique is described. Theoretical calculations provide a straightforward criterion for polarity determination that is a major advantage of this method. At the Bragg position, the thickness-averaged incident electron intensity, and hence, electron induced characteristic x-ray yield, is higher on the N plane than on the Ga if the g vector of the diffraction beam is parallel to the Ga–N bond direction, and vice versa. Experimental results support the theoretical predictions. The possible errors in the experiments are also discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433919
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    facet.materialart.
    Unknown
    Storage stability of organophosphorus pesticide residues in peanut and soya bean extracted solutions (2018)
    Royal Society
    Details
    Publication Date: 2018-07-26
    Description: This study was performed to determine the storage stability of organophosphorus pesticide residues in high oil content commodity matrices, peanut and soya bean. The storage conditions included different types of solvents (ethyl acetate, acetone and hexane) and corresponding extracted matrix solutions, light and temperature. It was found that three pesticides degraded quickly especially in ethyl acetate solvent. They decreased greater than 30% when stored for 3 days at –20°C in ethyl acetate; the results showed that the stability could be improved in the extracted matrix solutions. Light had a slight effect for stability of phorate and fenthion, while it played an important effect for disulfoton with the exception of ethyl acetate as solvent. Even at –20°C, exposure to solvents or extracted matrix solution resulted in 40.67, 96.33 and 35.07% loss of phorate, disulfoton and fenthion. Hence, it could be assumed that these three residues could be more stable at lower temperature, in the dark and in acetone or hexane extracted peanut and soya bean solutions.
    Keywords: analytical chemistry
    Electronic ISSN: 2054-5703
    Topics: Natural Sciences in General
    Published by Royal Society
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...