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  • Oxford University Press  (135)
  • American Institute of Physics (AIP)  (105)
  • The American Physiological Society (APS)  (20)
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  • 1
    Electronic Resource
    Electronic Resource
    Streaming vorticity flux from oscillating walls with finite amplitude (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 1933-1938 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: How to describe vorticity creation from a moving wall is a long standing problem. This paper discusses relevant issues at the fundamental level. First, it is shown that the concept of "vorticity flux due to wall acceleration'' can be best understood by following fluid particles on the wall rather than observing the flow at fixed spatial points. This is of crucial importance when the time-averaged flux is to be considered. The averaged flux has to be estimated in a wall-fixed frame of reference (in which there is no flux due to wall acceleration at all); or, if an inertial frame of reference is used, the generalized Lagrangian mean (GLM) also gives the same result. Then, for some simple but typical configurations, the time-averaged vorticity flux from a harmonically oscillating wall with finite amplitude is analyzed, without appealing to small perturbation. The main conclusion is that the wall oscillation will produce an additional mean vorticity flux (a fully nonlinear streaming effect), which is partially responsible for the mechanism of vortex flow control by waves. The results provide qualitative explanation for some experimentally and/or computationally observed phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.858819
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  • 2
    Electronic Resource
    Electronic Resource
    Microwave effects on YBa2Cu3Oy Josephson junctions with step-edge, bi-epitaxial, and sandwich geometries (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1871-1877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fabrication and characterization of YBa2Cu3Oy Josephson junctions with step-edge, bi-epitaxial, and sandwich geometries are performed in this study to investigate the effects of microwave irradiation on the I–V characteristics. I–V curves under microwave irradiation reveal Shapiro steps. The width of the constant voltage steps were modulated by the microwave power. The period of the magnetic induction ΔB detected from the V–Φ curves for superconducting quantum interference devices is temperature dependent. Additionally, Tc and Ic of the proximity sandwich junctions are enhanced by the microwave irradiation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360222
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  • 3
    Electronic Resource
    Electronic Resource
    Sidegating effect on Schottky contact in ion-implanted GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7422-7423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sidegating effect on the Schottky barrier in ion-implanted GaAs was investigated with capacitance-voltage profiling at various negative substrate voltages. It was demonstrated that the negative substrate voltage modulates the Schottky depletion region width as well as the space charge region at the substrate-active channel interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360399
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  • 4
    Electronic Resource
    Electronic Resource
    High-power-use Mn–Zn ferrites with monodomain structure prepared by low-temperature sintering : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5432-5434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Densely sintered Mn–Zn ferrites with grain size varying between 1 and 6 μm were obtained. Then the effect of grain size was investigated in detail by power loss analysis and scanning electron microscopy examination of microstructure. It is found that the power loss is seen to be lowered from 260 to 120 kW/m3 at 500 kHz, 50 m T and 90 °C with grain size decreased in the order of 3 μm. It is assumed that the residual loss from domain wall resonance is a dominant factor of power loss from 500 kHz to 1 MHz. Therefore we conclude that Mn–Zn ferrite display a grain size dependent power loss with transition at grain size about 3 μm due to the absence of intragranular domain wall and these fine core materials can be prepared by low sintering temperature and the optimum control of atmosphere containing 0.5% O2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362329
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of Er2O3 addition on microstructure and physical properties of Mn–Zn ferrites for high-power use : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6112-6114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present authors found that Mn–Zn ferrites containing Er2O3 had improved values of σs (specific magnetization) and amplitude permeability. Samples with different addition amount of Er2O3 were sintered at 1180 °C. The results show that Er2O3 addition from 0.02 to 0.1 wt % causes the amplitude permeability to increase from 1070 to 2180. The magnetization can be increased from 91.6 to 92.8 emu/g within the range 0.02–0.1 wt %. Furthermore, the effect of Er2O3 addition was investigated in detail by power-loss analysis and scanning electron microscopy examination of microstructure. We found that samples with Er2O3 less than 0.04 wt % exhibit power loss similar to the sample without Er2O3 addition and with SiO2–CaO contents. Thus we conclude that the amplitude permeability and specific magnetization of Mn–Zn ferrites for high-frequency and high-power use were improved by a small Er2O3 addition (〈0.04 wt %).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355477
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  • 6
    Electronic Resource
    Electronic Resource
    Differential photoreflectance of Si-δ-doped GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3030-3033 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The signals from buried layer in Si-δ-doped GaAs of different undoped cap thickness have been studied by differential photoreflectance. The first-derivative-like line shape of differential photoreflectance is attributed to the energy transitions related to the modulations of two-dimensional electron gas density. We have observed a change of line shape at low temperatures. This change of line shape is probably due to the change of potential distribution in the conduction band, which is caused by the surface Fermi-level pinning and surface photovoltaic effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356148
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous mobility enhancement in heavily carbon-doped GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5453-5455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1×1018 and 4×1018 cm−3. However, the 77 K mobility was enhanced from p(approximately-greater-than)4×1018 cm−3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7×1018 to 3×1019 cm−3. As a result, the 77 K mobility was around 50%–60% greater than the 300 K mobility due to the metallic-type conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355706
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  • 8
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation for the potential of mean force between ionic colloids in solutions of asymmetric salts (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 7084-7094 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new technique for Monte Carlo sampling of the hard-sphere collision force has been applied to study the interaction between a pair of spherical macroions in primitive-model electrolyte solutions with valences 1:2, 2:1, and 2:2. Macroions of the same charge can attract each other in the presence of divalent counterions, in analogy with earlier observations for planar and cylindrical geometries. The attraction is most significant at intermediate counterion concentrations. In contrast to the entropic depletion force between neutral particles, attraction between macroions is of energetic origin. The entropic contribution to the potential of mean force is generally repulsive at conditions corresponding to aqueous colloids with or without salt. For systems with divalent counterions, the potentials of mean force predicted by mean-field approximations like the Derjaguin–Landau–Verwey–Overbeek (DLVO) theory or the Sogami–Ise (SI) theory are qualitatively different from those observed in the simulations. However, for systems with monovalent counterions, predictions of DLVO theory are in fair agreement with simulation results. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480000
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  • 9
    Electronic Resource
    Electronic Resource
    Picosecond large angle reorientation of the magnetization in Ni81Fe19 circular thin-film elements (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 278-286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large angle picosecond reorientation of the magnetization has been studied in circular Ni81Fe19 thin-film elements of 30 μm diameter and 500 Å thickness by means of an optical pump–probe technique. The sample was pumped by an optically triggered magnetic field pulse and probed by a time resolved magneto-optical Kerr effect measurement. The temporal profile of the pulsed field and the in-plane uniaxial anisotropy of the element were first determined from measurements made in large static fields where the magnetization exhibited small amplitude ferromagnetic resonance oscillations. Measurements of large amplitude oscillations were then made in a smaller static field that was still larger than the in-plane uniaxial anisotropy field and sufficient to saturate the sample. Using the measured temporal profile of the pulsed field, the Landau–Lifshitz–Gilbert equation was used to model the motion of the magnetization as a coherent rotation process. The same values of the anisotropy and damping constants provided an adequate simulation of both the high and low field data. The magnetization was found to move through an angle of up to about 30° on subnanosecond time scales. The dependence of the reorientation upon the direction of the static applied field and observed deviations from the coherent precession model are discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421211
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  • 10
    Electronic Resource
    Electronic Resource
    Calculation of the ground state of shallow donors in GaAs1−xNx (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 789-791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ground-state binding energy and the Bohr radius of shallow donors in GaAs1−xNx alloys are determined as a function of the nitrogen atomic fraction using variational principle calculations. The calculations show that the ground state is strongly affected by the N-induced changes of the conduction band structure and the possible increase of the dielectric constant. Most importantly, large effects are predicted for the case of a Coulomb potential screened by free charge carriers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324999
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