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  • New York, NY :Springer,  (5)
  • American Institute of Physics (AIP)  (4)
  • 1
    Online Resource
    Online Resource
    New York, NY :Springer,
    Keywords: Environmental management. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (600 pages)
    Edition: 1st ed.
    ISBN: 9781461548997
    DDC: 537.24
    Language: English
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  • 2
    Keywords: Gases-Congresses. ; Electronic books.
    Description / Table of Contents: Proceedings of a NATO ASI held in Patras, Greece, September 5-18, 1993.
    Type of Medium: Online Resource
    Pages: 1 online resource (578 pages)
    Edition: 1st ed.
    ISBN: 9781461525400
    Series Statement: NATO Science Series B: Series ; v.326
    Language: English
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  • 3
    Online Resource
    Online Resource
    New York, NY :Springer,
    Keywords: Nuclear physics. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (641 pages)
    Edition: 1st ed.
    ISBN: 9781461505839
    DDC: 537/.24
    Language: English
    Note: GASEOUS DIELECTRICS IX -- Editor's page -- Copyright -- PREFACE -- CONTENTS -- SECTION 1: BASIC PHYSICS OF GASEOUS DIELECTRICS -- DYNAMICS OF LOW ENERGY ELECTRON COLLISIONS WITH MOLECULES AND CLUSTERS -- LOW ENERGY ELECTRON INTERACTION WITH MOLECULES AT SURFACES -- ION MOTION IN DIELECTRIC GASES -- Electron Mobility and Effective Ionization Coefficients in SF6-CO2 Mixtures -- ELECTRON TRANSPORT, IONIZATION, AND ATTACHMENT COEFFICIENTS IN C2F4 AND C2F4/AR MIXTURES -- RATE CONSTANTS FOR UNIMOLECULAR DECOMPOSITION OF SF6 -- ELECTRON DRIFT VELOCITIES IN THE MIXTURES OF CARBON DIOXIDE AND NITROGEN -- ELECTRON INTERACTIONS WITH c-C4F8 -- THERMAL ELECTRON CAPTURE BY SOME HALOCARBONS -- EXCESS ELECTRON MOBILITY IN ARGON GAS IN AN EXTENDED TEMPERATURE AND DENSITY RANGE -- IR FLUORESCENCE OF XE2 MOLECULES IN BEAM-EXCITED XE GAS AND AR-XE GAS MIXTURE AT HIGH PRESSURES -- Calculation of the Global Warming Potential for Sulfur Hexafluoride Using the Updated Atmospheric Lifetime from Moore, et al. -- SECTION 2: GASEOUS DIELECTRICS AS PLASMA PROCESSING GASES -- THE USE OF SF6 AS A PLASMA PROCESSING GAS -- AN INTEGRATED PLASMA EQUIPMENT - FEATURE EVOLUTION MODEL FOR THIN FILM ETCHING APPLICATIONS -- DEPOSITION OF PLASMA POLYMER FILMS BY AN ATMOSPHERIC PRESSURE GLOW DISCHARGE -- CHEMISORBED CF3I ON A SILICON SURFACE -- ELECTRON COLLISION PROCESSES IN NITROGEN TRIFLUORIDE -- SECTION 3: MODELING AND SIMULATION OF GAS-DISCHARGE BEHAVIOR -- A HYBRID PIC-MCC/FLUID MODEL FOR STREAMER DISCHARGES UNDER HIGH GAS PRESSURES -- ELECTRICAL CHARACTERIZATION OF GAS DISCHARGES IN RELATION WITH THEIR PROPERTIES USING A NUMERICAL TREATMENT -- INITIATION OF LEADER IN LONG AIR GAPS AT QUASI-STEADY CORONA NEAR STRESSED ELECTRODE -- A PARTICLE-IN-CELL SIMULATION OF PLASMA OPENING SWITCH -- TWO DIMENSIONAL PARTICLE-IN-CELL SIMULATION OF PREDISCHARGE PHENOMENA ALONG AN INSULATOR. , EXPERIMENTAL STUDY AND MONTE CARLO SIMULATION ON LUMINOUS LAYERS IN NEON -- STEP-WISE PROPAGATION OF LONG STREAMER IN ELECTRONEGATIVE GASES -- FAST TIME RESOLVED MEASUREMENT AND SIMULATION OF CORONA -- SOME CONSIDERATIONS OF NEAR-EARTH SPACE AS A GASEOUS DIELECTRIC -- SECTION 4: PARTIAL DISCHARGES: BASIC MECHANISMS AND APPLICATIONS -- ELECTRICAL INSULATION DIAGNOSIS AND BREAKDOWN PREDICTION OF GAS INSULATED POWER APPARATUS BASED ON PARTIAL DISCHARGE MECHANISM -- LONG-TERM SEQUENTIAL CHARACTERISTICS OF NEGATIVE PARTIAL DISCHARGE IN PRESSURED SF6,GAS -- PD Inception and Breakdown Voltage Characteristics in PFC and SF6 gas mixtures -- INFLUENCE OF THE SURFACE ROUGHNESS ON THE SENSITIVITY OF THE UHF METHOD -- CORONA DISCHARGE PHENOMENOLOGY AT ONSET IN WEAKLY ELECTRONEGATIVE GAS MIXTURES -- PARTIAL DISCHARGE AND BREAKDOWN CHARACTERISTICS IN N2/O2 AND N2/CO2 GAS MIXTURES UNDER INHOMOGENEOUS ELECTRIC FIELD -- PARTIAL DISCHARGE AND BREAKDOWN MECHANISMS IN ULTRA-DILUTE SF6 AND PFC GASES WITH N2 GAS -- Variation of Partial Discharge Behavior of Epoxy Under Sealed Condition -- GENERAL CONSIDERATION FOR THE PARTIAL DISCHARGE DETECTION SENSITIVITY -- EXCIMER EMISSION FROM PULSED HIGH PRESSURE XENON GLOW DISCHARGES -- BENZENE DESTRUCTION IN DIRECT CURRENT ATMOSPHERIC PRESSURE AIR GLOW DISCHARGES -- SECTION 5: NEW STUDIES OF DIELECTRIC GASES/MIXTURES -- THE DEVELOPMENT OF FAST SINGLE-SHOT AND REPETITIVELY-OPERATED SF6 CLOSING SWITCHES FOR PULSED-POWER APPLICATIONS -- APPLICATION OF FLUOROCARBON VAPOR TO ELECTRICAL INSULATION -- INSULATION PROPERTIES OF CO2/N2 GAS MIXTURE WITH A SMALL AMOUNT OF SF6 -- POSSIBILITY OF GAS MIXTURES CONTAINING c-C4F8 AS A SF6 SUBSTITUTE IN GAS INSULATION -- PARTIAL DISCHARGE MECHANISM AND CURRENT WAVEFORMS IN ELECTRONEGATIVE GASES AND GAS MIXTURES -- PRESSURE DEPENDENCE OF BREAKDOWN TIMES IN LOW PRESSURE GAS. , MULTIFRAME SCHLIEREN REGISTRATION OF SPATIAL STRUCTURE OF THE LEADER IN COMPRESSED SF6 -- EXPERIMENTAL VERIFICATION OF PARTICLE MOVEMENT MODELING IN A COAXIAL DIELECTRIC COATED ELECTRODE SYSTEM IN SF6 -- ELECTRICAL BREAKDOWN EXPERIMENTS IN AIR FOR MICROMETER GAPS UNDER VARIOUS PRESSURES -- STEP PROPAGATION MECHANISM OF IMPULSE CREEPAGE DISCHARGE IN N2/SF6 GAS MIXTURES -- Dielectric Properties of Gas Mixtures with Carbon Fluoride Gases and N2/CO2 -- STUDY ON INSULATION CAPABILITY OF HIGH TEMPERATURE GAS VIA LASER-PRODUCED PLASMA -- SECTION 6: HIGH PRESSURE GAS DIELECTRICS/MIXTURES -- LIGHTNING IMPPULSE BREAKDOWN CHARACTERISTICS OF HIGH-PRESSURE N2 AS AN ALTERNATIVE INSULATION GAS TO SF6 -- DIELECTRIC PERFORMANCE OF CO2 GAS COMPARED WITH N2 GAS -- Breakdown Strength of N2-SF6 Gas Mixtures Containing 10% and 5% SF6 Compared with pure SF6 -- THE EFFECT OF A PARTICLE CONTAMINATED SPACER SURFACE ON THE DIELECTRIC STRENGTH IN SF6/N2 GAS MIXTURES -- THE INFLUENCE OF SPACE-CHARGE ON THE BREAKDOWN IN SF6 -- SECTION 7: DECOMPOSITION OF DIELECTRIC GASES -- ABLATION IN SF6 CIRCUIT-BREAKER ARCS: PLASMA PROPERTIES AND BY-PRODUCTS FORMATION -- BYPRODUCTS IN THE INSULATING GASEOUS MATRIX OF A GIS -- STUDY OF THE DECOMPOSITION OF TRACES OF SF6 IN THE LOWER ATMOSPHERE: THE KINETIC RESULTS -- SPARK DECOMPOSITION OF SF6,SF6Nz (10:90 AND 5:95) MIXTURES IN THE PRESENCE OF METHANE (0-4%) OR ETHYLENE (0-2%) -- THEORETICAL ANALYSIS OF HYDROLYSIS OF SULFUR FLUORIDES SFn (n = 3-6) IN THE GAS PHASE -- SECTION 8: GAS-INSULATED EQUIPMENT I -- GIS VERSUS NON-GIS - A VALUE BASED COMPARISON -- DIELECTRIC STUDY AND DEVELPMENT OF GAS-INSULATED TRANSFORMER -- PERFORMANCE OF SF6 GAS MIXTURES IN HIGH-VOLTAGE CIRCUIT BREAKERS -- Interrupting Characteristics of Small Current Using NS/F6 Gas Mixtures -- INSULATION CHARACTERISTICS OF GIS FOR NON-STANDARD LIGHTNING SURGE WAVEFORMS. , Enhanced Field Calculation for HVDC GIS -- SECTION 9: GAS-INSULATED EQUIPMENT II -- DIELECTRIC PROPERTIES OF GAS INSULATED BUS APPLYING LOW SF6 CONTENT AND HIGHLY COMPRESSED N2/SF6 GAS MIXTURES -- NEW CONCEPT OF SWITCHGEAR FOR REPLACING SF6 GAS OR GAS MIXTURE -- Risk Assessment of Free Particles in GIS/GIL Based on Spectral Analysis -- DETERMINATION OF INCEPTION AND BREAKDOWN VOLTAGES OF N2 -SF6 GAS-MIXTURES IN STRONG INHOMOGENEOUS FIELDS -- INVESTIGATION OF THE EFFECT OF POLARITY OF SWITCHING AND LIGHTNING IMPULSE VOLTAGES ON THE PERFORMANCE OF AIR FOR SHORT GAP DISTANCES IN EXTREMELY NONUNIFORM FIELD -- CREEPING FLASHOVER CHARACTERISTICS OF UNDER PULSE VOLTAGE IN N2/SF6 MIXTURES -- USE OF SPHERE GAPS AND SPHERE - ROD GAPS UNDER STANDARD LIGHTNING IMPULSE VOLTAGES -- The breakdown of a tower - line clearance under impulse voltages pre - stressed by a negative D.C. voltage -- SECTION 10: SF6 INSULATED APPARATUS: BYPRODUCTS/DETECTION/RECOVERY -- CHEMICAL DECOMPOSITION OF HIGH PRESSURE SF6/N2 (5:95) MIXTURES UNDER NEGATIVE DC CORONA DISCHARGES -- IN-SITU MEASUREMENTS OF SF6 LEAK RATES IN INDOOR GAS-INSULATED SWITCHGEARS (GIS) -- SF6 GAS RECOVERY FROM SF6/N2 MIXTURES USING POLYMER MEMBRANE -- Separation of SF6/N2 Mixtures -- SECTION 11: INDUSTRIAL OUTLOOK -- GAS INSULATION SYSTEMSACTIVITIESOF CIGRE WG 15.03 -- SF6 GAS HANDLING IN JAPAN FOCUSED ON EMISSION REDUCTION FROM GAS INSULATED ELECTRICAL EQUIPMENT -- EPRI's PRESENT AND FUTURE SF6 RESEARCH -- U.S. EPA's SF6 Emissions Reduction Partnership for Electric Power Systems: Results and Prospects -- An Industrial Perspective on SF6 Issues -- SECTION 12: DISCUSSION PANEL -- DISCUSSION PANEL: DATABASES FOR GASEOUS DIELECTRICS AND PLASMA PROCESSING -- PARTICIPANTS -- PHOTOGRAPHS OF PARTICIPANTS -- AUTHOR INDEX -- SUBJECT INDEX.
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  • 4
    Online Resource
    Online Resource
    New York, NY :Springer,
    Keywords: Gaseous dielectrics-Congresses. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (669 pages)
    Edition: 1st ed.
    ISBN: 9781489912954
    Language: English
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  • 5
    Online Resource
    Online Resource
    New York, NY :Springer,
    Keywords: Electron-molecule collisions. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (790 pages)
    Edition: 1st ed.
    ISBN: 9781441989710
    Series Statement: Physics of Atoms and Molecules Series
    DDC: 539.7/57
    Language: English
    Note: Fundamental Electron Interactions with Plasma Processing Gases -- Copyright -- Contents -- Preface -- Acknowledgments -- Chapter 1 FUNDAMENTAL ELECTRON-MOLECULE INTERACTIONS AND THEIR TECHNOLOGICAL SIGNIFICANCE -- Chapter 2 ELECTRON-MOLECULE INTERACTIONS IN THE GAS PHASE: CROSS SECTIONS AND COEFFICIENTS -- Chapter 3 SYNTHESIS AND ASSESSMENT OF ELECTRON COLLISION DATA -- Chapter 4 ELECTRON INTERACTIONS WITH CF4, C2F6, AND C3F8 -- Chapter 5 ELECTRON INTERACTIONS WITH CHF3, CF3I, AND c-C4F8 -- Chapter 6 ELECTRON INTERACTIONS WITH Cl2, CCl2F2, BCl3, AND SF6 -- Index -- About the Authors.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6275-6289 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Enhanced electron attachment to KrF excimer laser irradiated thiophenol (C6H5SH) molecules has been studied in a electron swarm experiment using nitrogen as the buffer gas. Two distinct electron attachment processes were found to be responsible for the observed large enhancement in electron attachment under different experimental conditions. One enhanced electron attachment process occurred immediately (within a few μs) after laser irradiation and is shown to be due to dissociative electron attachment to electronically excited thiophenol molecules in their first excited triplet state produced indirectly via excited singlet states reached by excimer laser irradiation. At low mean electron energies (∼0.1 eV), up to 5 orders of magnitude enhancement in electron attachment has been observed for the triplet state compared to the ground electronic state. This enhanced electron attachment decreased with (i) increasing nitrogen pressure due to quenching of the first excited singlet state of thiophenol (precursor of the triplet state) by nitrogen, and (ii) increasing time delay between laser irradiation and subsequent electron attachment to the laser-irradiated molecules. This latter observation is shown to be due to the self-(triplet–triplet) quenching of the electron attaching triplet state molecules. The second observed enhanced electron attachment process occurred at longer times (〉100 μs) after laser irradiation and is attributed to the electron attachment to diphenyl disulfide (C6H5SSC6H5) produced by the interaction of thiophenoxy radicals (C6H5S (overdot)) formed directly or indirectly via laser irradiation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 274-287 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron attachment measurements on excimer–laser-excited superexcited states (SES) of saturated amine compounds, and in particular on triethylamine (TEA), have been carried out employing a new experimental technique. A rate equation analysis based on a proposed model shows that the electron attachment rate constant for the SES is several orders of magnitude larger than that for the ground electronic state. The proposed mechanism for electron attachment to SES involves the capture of a near-zero-energy electron—(produced by the same laser pulse that produces the SES)—by a superexcited molecule to form a transient parent anion which subsequently dissociates producing a stable fragment anion. The similarity of the above mechanism to an electron-excited Feshbach resonance is indicated and a scheme for the identification of molecular systems that can be excited (via resonance-enhanced multiphoton excitation) to SES is outlined.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2571-2573 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observation of enhanced electron attachment to ArF-excimer-laser irradiated silane is reported. Evidence is presented that highly excited electronic states of silane or its photofragments are responsible for the observed enhanced electron attachment. Since such electronically excited states may be produced in silane plasmas (by direct electron impact or by excitation transfer via metastable states of rare gases that are commonly used in silane discharges), the possible significance of this electron attachment process for negative ion formation in silane plasmas is indicated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 8304-8310 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of temperature on electron attachment to dichlorodifluoromethane (CCl2F2) has been investigated for temperatures up to 500 K and for mean-electron energies from thermal to 1.0 eV using an electron swarm method. The measurements were made in mixtures of CCl2F2 with nitrogen. The electron attachment rate constant increases with temperature over the entire temperature and mean-electron energy range investigated. The variation of the thermal value of the electron attachment rate constant with temperature compares well with earlier measurements of this quantity and shows an increase by a factor of 10 when the temperature is raised from 300 to 500 K. From a comparison of published data on the electron affinity, electron attachment using the swarm method, electron attachment using the electron beam method, electron scattering, electron transmission, indirect electron scattering, and related calculations, the lowest negative ion states of CCl2F2 have been identified with average positions as follows: a1(C–Clσ*) at +0.4 eV and −0.9 eV, b2(C–Clσ*) at −2.5 eV, a1(C–Fσ*) at −3.5 eV, and b1(C–Fσ*) at −6.2 eV; an electron-excited Feshbach resonance is also indicated at −8.9 eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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