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  • 1
    Electronic Resource
    Electronic Resource
    Stark effect and Stark-ladder effect in Al0.4Ga0.6As/GaAs asymmetric coupled multiple quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2486-2494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) measurements at 10 K were performed in order to investigate the influence of electric fields on the exciton states in Al0.4Ga0.6As/GaAs asymmetric coupled multiple quantum wells (ACMQW) grown by molecular-beam epitaxy. The coupling of the electronic energy levels in the wells led to an enhancement of the quantum-confined Stark effect. The PL intensity decreased as the electric field increased. Calculated values of the intersubband transition energies were in good agreement with the experimental values for the ACMQW, and these values showed a similar behavior as those for the step quantum well. When the external applied field was very strong, Stark-ladder transitions were observed, and the measured dependence of the field-induced energy shifts of the Stark-ladder transitions for the ACMQW agreed with theory. These results indicate that the Stark effect and the Stark-ladder transitions in a unique ACMQW based on the AlxGa1−xAs/GaAs structure were observed simultaneously. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358777
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  • 2
    Electronic Resource
    Electronic Resource
    Ion mixing and thermochemical properties of tracers in Ag (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2449-2451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very thin films of Ni, Ta, W, Pb, and Bi in a Ag matrix were irradiated at 77 K with 330 keV Kr ions at doses from 3 to 7×1015 ions/cm2 and analyzed at room temperature by backscattering of 1.9 MeV He+. The measured mixing efficiencies, Dt/φFD, for the various tracers correlate with their respective tracer impurity diffusion coefficients and impurity-vacancy binding energies in Ag. The results concur with previous ones with a Cu matrix and further support the idea that the parameters that are important for thermal diffusion are also important for ion mixing in a thermal spike.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341018
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication and characteristics of submicron tunneling junctions on high Tc superconducting c-axis thin films and single crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7675-7677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report successful fabrication and characteristics of submicron-size tunneling junctions using c-axis YBa2Cu3O7−y (YBCO) thin films of 800 nm thickness and Bi2Sr2CaCu2O8+δ(Bi-2212) single-crystal whiskers. The junctions were made using a three-dimensional focused-ion-beam etching method. First, a microbridge was patterned in a required junction width by normal direction etching. By tilting the sample stage up to 90°, two grooves on the bridge were etched from the lateral direction in order to create the required junction size. The 60 K YBCO junctions did not show any degradation of critical current density (Jc) down to an in-plane area of 0.5 μm2 and showed current–voltage (I–V) characteristics of the collective switching transition from the zero voltage state to the resistive state. For Bi-2212 stacks smaller than 1 μm2, we identified some of the features of charging effects on the I–V characteristics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361267
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3087-3089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed that stress-induced leakage currents (SILC) in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after stress, regardless of the polarity of the applied gate bias. The reduction of SILC increased with the applied gate bias and began to saturate after 105 s. In addition, the reduction of SILC was significantly enhanced in a hydrogen ambient, suggesting a strong link between the reduction of SILC and trapped-hole annealing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287403
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2630-2632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As composition of over 1.5% and 1%, respectively. Photoluminescence (PL) spectra for the non-phase-separated GaNP (P composition: 0.37%) and GaNAs (As composition: 0.26%) show redshift of 50 and 40 meV, respectively, from that of GaN, and exhibit Stokes shift of about 80 meV which is smaller than that of GaN (100 meV). On the other hand, the PL spectrum for the phase-separated GaNP shows a large redshift peaking at 2.101 eV. This peak is considered to be an emission from the phase-separated GaP-rich GaPN region. PL excitation spectrum shows two large broad peaks. One at 2.982 eV corresponds to the absorption at the Γ point of GaP-rich region, and the other at 2.308 eV corresponds to the absorption at the isoelectronic band edge of GaP-rich GaPN alloy originated from the X point of GaP. In the case of phase-separated GaNAs, no PL is observed, suggesting that the optical properties are much more sensitive to crystalline quality in GaAs-rich GaAsN than in GaP-rich GaPN. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122535
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  • 6
    Electronic Resource
    Electronic Resource
    Submicron stacked-junction fabrication from Bi2Sr2CaCu2O8+δ whiskers by focused-ion-beam etching (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1156-1158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated submicron-sized intrinsic Josephson junctions by the focused-ion-beam (FIB) etching method. The principal result was a reduction of the in-plane junction area to 0.3 μm2 by direct FIB etching with no degradation in the critical transition temperature (Tc). In the current (I)–voltage (V) characteristics of these stacks, the gap structure and the normal state resistance are clearly observed together with a reduction of the Joule heating and disappearance of the branch structure. The Coulomb staircase structure was found in the I–V curves of submicron junctions as a result of their small effective capacitance of fF order. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123472
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  • 7
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    Radiation promotes invasiveness of non-small-cell lung cancer cells through granulocyte-colony-stimulating factor (2015)
    Nature Publishing Group (NPG)
    In: Oncogene
    Details
    Publication Date: 2015-10-17
    Description: Radiation promotes invasiveness of non-small-cell lung cancer cells through granulocyte-colony-stimulating factor Oncogene 34, 5372 (16 October 2015). doi:10.1038/onc.2014.466 Authors: Y-H Cui, Y Suh, H-J Lee, K-C Yoo, N Uddin, Y-J Jeong, J-S Lee, S-G Hwang, S-Y Nam, M-J Kim & S-J Lee
    Print ISSN: 0950-9232
    Topics: Medicine
    Published by Nature Publishing Group (NPG)
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  • 8
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    Characterization of chemical doping of graphene by in-situ Raman spectroscopy (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-05-21
    Description: We explored single-layer graphene and graphene field-effect transistors immersed in nitric acid using in-situ Raman spectroscopy. Two distinct stages were observed in the chemical doping process. The first stage involved blue shifts of the G and 2D peaks, whose saturation occurred rapidly with a time constant in the range of 10–25 s depending on the molar concentration of the acid. In the second stage, the intensity of the D peak, which was associated with structural defect formation, increased for a relatively long period of time. Since the major doping effects appeared during the first stage, the optimal doping conditions under which no noticeable structural defect formation occurred can be determined by monitoring the frequency shift. Transient doping concentrations along with structural defect densities were obtained from the Raman peak positions and intensities. We found that the doping-induced shift in the Dirac point in graphene field-effect transistors exhibited a fast response with respect to frequency shifts in the Raman spectra, which was attributed to the saturation of electrostatic gating effects.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Time-delayed transition of normal-to-abnormal glow in pin-to-water discharge (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-08-02
    Description: Time-delayed transition of normal-to-abnormal glow was investigated in discharge between spoke-like pins and ultrapure water by applying AC-driven power at a frequency of 14.3 kHz at atmospheric pressure. The normal-to-abnormal transition can be recognized from the slope changes of current density, gas temperature, electrode temperature, and OH density. The slope changes took place in tens of minutes rather than just after discharge, in other words, the transition was delayed. The time-delay of the transition was caused by the interaction between the plasma and water. The plasma affected water properties, and then the water affected plasma properties.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Reproducibility of the cutoff probe for the measurement of electron density (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-06-02
    Description: Since a plasma processing control based on plasma diagnostics attracted considerable attention in industry, the reproducibility of the diagnostics using in this application has become a great interest. Because the cutoff probe is one of the potential candidates for this application, knowing the reproducibility of the cutoff probe measurement becomes quit important in the cutoff probe application research. To test the reproducibility of the cutoff probe measurement, in this paper, a comparative study among the different cutoff probe measurements was performed. The comparative study revealed remarkable result: the cutoff probe has a great reproducibility for the electron density measurement, i.e., there are little differences among measurements by different probes made by different experimenters. The discussion including the reason for the result was addressed via this paper by using a basic measurement principle of cutoff probe and a comparative experiment with Langmuir probe.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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