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  • American Institute of Physics (AIP)  (2)
  • Munksgaard International Publishers  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2195-2197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314883
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Neutrophilic airway inflammation and IL-17 (2002)
    Oxford, UK : Munksgaard International Publishers
    Allergy 57 (2002), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1034/j.1398-9995.2002.02164.x
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  • 3
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    Spin-glass behaviors in carrier polarity controlled Fe3−xTixO4 semiconductor thin films (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-13
    Description: Carrier-type control of spin-glass (cluster spin-glass) is studied in order to engineer basic magnetic semiconductor elements using the memory functions of spin-glass. A key of carrier-polarity control in magnetite is the valence engineering between Fe(II) and Fe(III) that is achieved by Ti(IV) substitution. Single phases of (001)-oriented Fe 3− x Ti x O 4 thin films have been obtained on spinel MgAl 2 O 4 substrates by pulsed laser deposition. Thermoelectric power measurements reveal that Ti-rich films ( x  = 0.8) show p -type conduction, while Ti-poor films ( x  = 0.6–0.75) show n -type conduction. The systematic Fe(III) reduction to Fe(II) followed by Ti(IV) substitution in the octahedral sublattice is confirmed by the X-ray absorption spectra. All of the Fe 3− x Ti x O 4 films ( x  = 0.6–0.8) exhibit ferrimagnetism above room temperature. Next, the spin-glass behaviors of Ti-rich Fe 2.2 Ti 0.8 O 4 film are studied, since this magnetically diluted system is expected to exhibit the spin-glass behaviors. The DC magnetization and AC susceptibility measurements for the Ti-rich Fe 2.2 Ti 0.8 O 4 film reveal the presence of the spin glass phase. Thermal- and magnetic-field-history memory effects are observed and are attributed to the long time-decay nature of remanent magnetization. The detailed analysis of the time-dependent thermoremanent magnetization reveals the presence of the cluster spin glass state.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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