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  • American Institute of Physics (AIP)  (522)
  • International Union of Crystallography (IUCr)  (136)
  • 1
    Electronic Resource
    Electronic Resource
    Observation of growth modes during metal-organic chemical vapor deposition of GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3326-3328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123333
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  • 2
    Electronic Resource
    Electronic Resource
    Time-resolved temperature measurements during rapid solidification of Si-As alloys induced by pulsed-laser melting (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3725-3733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solidification of Si-As alloys induced by pulsed-laser melting was studied at regrowth velocities where the partition coefficient is close to unity. The congruent melting temperatures T0 of Si-As alloys were determined using a temperature measurement technique developed for this work, and was confirmed with T0 measurements using three other methods. The time-resolved temperature measurement uses a thin-film platinum thermistor, below and electrically isolated from the Si-As alloy layer, to directly measure the temperature during solidification. The other techniques compared the results of heat flow simulations with the fluence dependence of the peak melt depth obtained by transient conductance, the fluence dependence of the melt duration determined from time-resolved reflectivity and transient conductance, and the fluence threshold for the initiation of melting. This combination of measurements in conjunction with Rutherford backscattering spectrometry permitted the determination of the solid-liquid interface temperature, velocity and partition coefficient, the latent heat of fusion and T0 for Si-4.5 at. % As and Si-9 at. % As alloys. The values of T0 determined by all four independent methods were consistent, indicating overall agreement between the direct experimental measurements and the analyses based on heat flow simulations. T0 was determined to be 1565±25 K for 4.5 at. % As and 1425±25 K for 9 at. % As. In addition, the enthalpy of fusion was determined to be independent of composition for the range studied. The values obtained in this work are compared with previous measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352903
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of effects of ripple on the permeability of thin film head materials (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6014-6014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new low-field resonance technique for determining the initial hard-axis permeability (μ') of materials used in thin film and magnetoresistive heads has been developed. The initial μ' is found to be less than 4πM/Hk due to the internal effective magnetostatic field caused by magnetization ripple, in agreement with the theory and transverse biased initial susceptibility measurements of Hoffmann and others.1 A proper consideration of the in-plane susceptibility for real films includes the Stoner–Wohlfarth anisotropy field (Hk)−1 dependence, modified by the factors due to ripple (B) and skew (E) as defined by Hoffmann. The latter produce internal fields that shift the Kittel resonance versus field plots (fr2 vs H) leftward from their ideal symmetric positions for angles of 0° and 90° between bias field and preferred axis. When resonance data from both orientations are computer-fit simultaneously, we determine the parameters B and E as well as Hk and Ms. The coefficients are believed to have more consistency than those obtained using Hk found from hard-axis magnetization curves. The reduction of the hard-axis μ' is by the factor (1+B+E)−1. The high frequency properties (300 kHz–3 GHz) were measured using a test jig consisting of a shorted-shield strip-line section with a one-turn inductively coupled loop containing the sample and located at the shorted end. Bias fields from zero to 100 Oe were employed. We measure fR reproducibly with an uncertainty of less than 1%. This analysis determines the parameters of interest from measurements under dynamic conditions. Results include Permalloy and amorphous TM-metalloid films. When annealed to reduce Hk, their B parameters increase in accord with theory, assuming invariant structure constants, S. Beyond head applications, the method relates to thin film microwave devices operating near fr in zero field.2
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354066
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  • 4
    Electronic Resource
    Electronic Resource
    Strain compensation by Ge in B-doped silicon epitaxial films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4477-4479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compensation of stress induced in silicon epitaxial films heavily doped with boron was investigated. Addition of a controlled amount of germanium during the film growth allows one to attain a desired compressive or tensile stress in the film, or its complete elimination. The data shows very good correlation with a theoretical model adapted from Herzog et al. [J. Electrochem. Soc. 131, 2969 (1984)]. A 6.45 : 1 ratio of atomic concentrations of Ge and B completely eliminates stress in these films. We determined a critical amount of strain in the films, (approximately-equal-to)2–4 μm thick, beyond which misfit dislocations are generated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352181
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic force microscopy of (100), (110), and (111) homoepitaxial diamond films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5930-5940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present atomic force microscopy images of diamond films grown by chemical vapor deposition epitaxially on diamond (100), (110), and (111) substrates. The films were grown from 0.2%–1.6% mixtures of CH4 and C2H2 in H2 in a hot-filament reactor at a total pressure of 25 Torr. The substrate and filament temperatures were held at 810–1000 and 2000–2150 °C, respectively. A (100)-oriented diamond film grown with 0.3% CH4 at a substrate temperature of 810 °C was rough on the μm scale, exhibiting pyramidal features, terraces, and penetration twins, while films grown at higher substrate temperatures and hydrocarbon flow rates were smooth on the nm scale and showed evidence of a (2×1) reconstruction. A (110)-oriented film was very rough on the μm scale but nearly atomically smooth on the 0.5–5 nm scale and exhibited local slopes higher than 40° with no evidence of faceting. A film grown on a diamond (111) substrate underwent spontaneous fracture due to tensile stress and exhibited a roughness of ≈10–50 nm on the ≈100 nm lateral scale in regions far away from any cracks. The implications of the morphological features for diamond growth mechanisms are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350443
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical activation of group-IV elements implanted at MeV energies in InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1708-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activation and carrier mobility of InP implanted with the group-IV elements at MeV energies has been studied as a function of implanted atom (C, Si, Ge, and Sn) and rapid thermal annealing temperature (500–800 °C). In addition, electrical results have been correlated with photoluminescence (PL) measurements. In general, for a dose of 5×1014/cm2 and a projected range of ∼1.0 μm, the electrical activation and carrier mobility increase then saturate with increasing annealing temperature. Similarily, PL emission intensity increases with increasing annealing temperature. At a temperature of 750 °C, the electrically active fraction increases from C, Ge, Si, to Sn, respectively, while carrier mobility and PL emission intensity decreases with increasing atomic mass. Thus, Sn exhibits the highest electrical activation yet lowest carrier mobility with little optically observable, postanneal lattice recovery.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351201
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  • 7
    Electronic Resource
    Electronic Resource
    The role of the ion-solid interaction in ion-beam-induced deposition of gold (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 665-673 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold films were deposited on quartz-crystal microbalances by decomposing C7H7F6O2Au (dimethyl gold hexafluoroacetylacetonate) with 2–10-keV Xe+, Kr+, Ar+, Ne+, or He+ ion beams. The number of molecules decomposed per incident ion (i.e., the total decomposition yield) was determined as a function of ion mass and energy. The total decomposition yield increases with increasing ion mass and ion energy, and is approximately proportional to the nuclear stopping power. A binary collision model and a thermal spike model are developed that relate the energy deposited by the ion, at the substrate surface, to the total number of molecules decomposed. Both models predict total decomposition yields that are in reasonable agreement with the experimental measurements; however, the variation of total yield with changes in ion mass and energy are best described by the binary collision model. The success of both models demonstrates that the energy deposited into the substrate surface through the ion-solid interaction is responsible for the decomposition of adsorbed molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349671
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  • 8
    Electronic Resource
    Electronic Resource
    Abnormal grain growth in aluminum alloy thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3929-3940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Abnormal grain growth in 0.75-μm-thick aluminum alloy thin films has been studied using x-ray diffractometry, plan-view and cross-sectional transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis. Transmission electron microscopy was used with preannealed samples as well as with samples annealed in situ. By varying the deposition temperatures, compositions, and annealing conditions, we have determined the roles of alloying elements in the formation of second-phase precipitates and in promoting abnormal grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348452
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  • 9
    Electronic Resource
    Electronic Resource
    Nucleation and growth during reactions in multilayer Al/Ni films: The early stage of Al3Ni formation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2211-2218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-state interdiffusion reactions at Al/Ni interfaces in multilayer films have been studied using differential scanning calorimetry, cross-sectional transmission electron microscopy/microanalysis, and thin-film x-ray diffraction. Multilayer films with various modulation periods and an overall atomic concentration ratio of three Al to one Ni were prepared by alternate electron-beam evaporation in high- and ultrahigh-vacuum systems. We show calorimetric, microstructural, and compositional evidence that interdiffusion of Al and Ni leading to solid solutions precedes the formation of intermetallic crystalline compounds. Isothermal calorimetry indicates that Al3Ni subsequently nucleates in the interdiffused region at preferred sites. Calorimetric analyses also suggest that nucleation sites quickly saturate in the early stage of Al3Ni formation and that the nucleation site density strongly depends on the grain sizes of the deposited films. After coalescence into a continuous layer at the interface, Al3Ni thickens through a diffusion-limited process, in agreement with previous reports. A kinetic model is developed which yields calculated calorimetric traces in good agreement with experimental data. Our results suggest the importance of prenucleation interdiffusion, in addition to nucleation, in the selection of the first phase during thin-film reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348722
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical transport and related properties of zone-melt-recrystallized silicon-on-insulator films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7111-7117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport properties of zone-melt-recrystallized Si films of Si-on-Insulator wafers were investigated using resistivity and Hall effect measurements between 77 and 300 K. Both graphite strip and cold cathode electron beam methods were used for zone melting which produced high resistivity ((approximately-greater-than)103 Ω cm at room temperature) recrystallized films. Phosphorus implantation into the silicon films to a dopant level of 1×1016 cm−3 and subsequent annealing at 1100 °C reduced the room-temperature resistivities to ∼1 Ω cm. Hall mobilities of 950 cm2/V s were observed at room temperature for both materials after the implant anneal sequence. However, for temperatures less than 150 K, the mobility is higher in graphite strip than in electron beam recrystallized films. This behavior is consistent with the relative crystalline qualities of the two films as determined by electron channeling and x-ray diffraction. It is noteworthy that a deep level was observed at 0.2 eV below the conduction band in the graphite strip recrystallized film but not in the electron beam recrystallized samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347651
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