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  • American Physical Society (APS)  (18)
  • American Institute of Physics (AIP)  (11)
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  • 1
    Electronic Resource
    Electronic Resource
    Self-trapped state and phonon localization in TiO2 quantum dot with a dipole layer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4689-4690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The discrete phonon spectra of TiO2 quantum dot with a dipole layer is reported. The absorption intensities of different LO phonons are related to the phonon-electron coupling in accord with the prediction of the continuum polarization model. The two-phonon bound state appeared due to the localization effect. The optical absorption of the self-trapped state [reported in Appl. Phys. Lett. 59, 1826 (1991)] may be related to the strong electron-phonon interaction in this system, i.e., a bipolaronic state might form with the presence of surface donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352766
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Lateral displacement of a Gaussian beam reflected from a grounded slab with negative permittivity and permeability (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2084-2086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique negative lateral shift is demonstrated in this letter for a Gaussian beam reflected from a grounded slab with both negative permittivity and permeability, which is distinctly different from a shift caused by a regular grounded slab. The incident beam is modeled as a tapered wave with a Gaussian spectrum. The waves inside and outside the slab are solved analytically from Maxwell's equations by matching the boundary conditions at the interfaces. It is shown that the field values in all regions can be unambiguously determined. Numerical simulations are presented and the field values as well as the power densities are computed for all regions, and a dramatic negative lateral shift is observed when both ε and μ are negative. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462865
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Stable hexagonal-wurtzite silicon phase by laser ablation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2758-2760 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stable phase of relatively large hexagonal-wurtzite silicon crystals (up to 20 μm) was directly deposited at low pressure using ultraviolet laser ablation. The films were grown on a variety of substrates at room temperature from a single crystal, cubic silicon target. Crystallites of the hexagonal-wurtzite phase of silicon were clearly identified using selected area electron diffraction. Further support for this identification was provided by confocal scanning micro-Raman spectroscopy. The deposition of hexagonal silicon films may lead to novel two-dimensional optoelectronic devices, and pave the way to studies of the electronic properties of this lower symmetry, uncommon silicon phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125140
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    Paper (German National Licenses)
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  • 4
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    Direct conversion of a four-atom W state to a Greenberger-Horne-Zeilinger state via a dissipative process (2013)
    American Physical Society (APS)
    Details
    Publication Date: 2013-08-31
    Description: Author(s): Jie Song, Xiu-Dong Sun, Qing-Xia Mu, Ling-Li Zhang, Yan Xia, and He-Shan Song We consider an open quantum system consisting of four atoms which are placed in a damped cavity. Through a dissipative dynamics process, a W state can be converted into a Greenberger-Horne-Zeilinger state with deterministic probability. In addition, the interaction time need not be controlled strict... [Phys. Rev. A 88, 024305] Published Fri Aug 30, 2013
    Keywords: Quantum information
    Print ISSN: 1050-2947
    Electronic ISSN: 1094-1622
    Topics: Physics
    Published by American Physical Society (APS)
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  • 5
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    Lattice dynamics and thermal conductivity of calcium fluoride via first-principles investigation (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-03-03
    Description: The lattice thermal conductivity of CaF 2 is accurately computed from a first-principles theoretical approach based on an iterative solution of the Boltzmann transport equation. The second- and third-order interatomic force constants are generated from a real-space finite-difference supercell approach. Then, the force constants for both the second- and third-order potential interactions are used to calculate the lattice thermal conductivity and related physical quantities of CaF 2 at temperatures ranging from 30 K to 1500 K. The obtained lattice thermal conductivity 8.6 W/(m·K) for CaF 2 at room temperature agrees better with the experimental value than other theoretical data, demonstrating the promise of this parameter-free approach in providing precise descriptions of the lattice thermal conductivity of materials. The obtained dielectric parameters and phonon spectrum of CaF 2 accord well with available data. Meanwhile, the temperature dependence curves of the lattice thermal conductivity, heat capacity, and phonon mean free path are presented.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Highly uniform parallel microfabrication using a large numerical aperture system (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-13
    Description: In this letter, we report an improved algorithm to produce accurate phase patterns for generating highly uniform diffraction-limited multifocal arrays in a large numerical aperture objective system. It is shown that based on the original diffraction integral, the uniformity of the diffraction-limited focal arrays can be improved from ∼75% to 〉97%, owing to the critical consideration of the aperture function and apodization effect associated with a large numerical aperture objective. The experimental results, e.g., 3 × 3 arrays of square and triangle, seven microlens arrays with high uniformity, further verify the advantage of the improved algorithm. This algorithm enables the laser parallel processing technology to realize uniform microstructures and functional devices in the microfabrication system with a large numerical aperture objective.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Theoretical study on the top- and enclosed-contacted single-layer MoS2 piezotronic transistors (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-05-05
    Description: Recently, the piezotronic effect has been observed in two-dimensional single-layer MoS 2 materials, which have potential applications in force and pressure triggered or controlled electronic devices, sensors, and human-machine interfaces. However, classical theory faces the difficulty in explaining the mechanism of the piezotronic effect for the top- and enclosed-contacted MoS 2 transistors, since the piezoelectric charges are assumed to exist only at the edge of the MoS 2 flake that is far from the electronic transport pathway. In the present study, we identify the piezoelectric charges at the MoS 2 /metal-MoS 2 interface by employing both the density functional theory and finite element method simulations. This interface is on the transport pathway of both top- and enclosed-contacted MoS 2 transistors, thus it is capable of controlling their transport properties. This study deepens the understanding of piezotronic effect and provides guidance for the design of two-dimensional piezotronic devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Density functional studies on edge-contacted single-layer MoS2 piezotronic transistors (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-28
    Description: The piezotronic effect uses strain-induced piezoelectric charges at interfaces and junctions to tune and/or control carrier transport in piezoelectric semiconductor devices. This effect has recently been observed in single-layer 2D MoS 2 materials. However, previous work had found that metallic states are generated at the edge of a free-standing MoS 2 flat sheet, and these states may screen the piezoelectric charges. Using density functional theory simulations, we found that the metal–MoS 2 interface structure plays an important role in enhancing both the piezoelectric and piezotronic effects in MoS 2 transistors by breaking the metallic state screening effect at the MoS 2 edge. This study not only provides an understanding of the piezoelectric and piezotronic effects based on first principles calculations but also offers guidance for the design of two-dimensional piezotronic devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Studies of the structure of massive hybrid stars within a modified NJL model (2018)
    American Physical Society (APS)
    Details
    Publication Date: 2018-05-22
    Description: Author(s): Cheng-Ming Li, Jin-Li Zhang, Yan Yan, Yong-Feng Huang, and Hong-Shi Zong In this paper, we use the equation of state based on a modification of the 2 + 1 flavors Nambu-Jona-Lasinio (NJL) model to study the quark matter of hybrid stars. For comparison, we utilize five EOSs of the relativistic mean-field (RMF) model to describe the hadronic phase. With the three-window cross... [Phys. Rev. D 97, 103013] Published Mon May 21, 2018
    Keywords: Astrophysics and astroparticle physics
    Print ISSN: 0556-2821
    Electronic ISSN: 1089-4918
    Topics: Physics
    Published by American Physical Society (APS)
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  • 10
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    Intensity-dependent multiorbital effect in high-order harmonics generated from aligned O_{2} molecules (2013)
    American Physical Society (APS)
    Details
    Publication Date: 2013-09-17
    Description: Author(s): Jingtao Zhang, Yan Wu, Zhinan Zeng, and Zhizhan Xu High-order harmonics generated from multiple orbitals of aligned O 2 molecules are studied theoretically and we focus on the effect of two-center interference during photoexcitation. We find that the contribution of the harmonics generated from different molecular orbitals to the total harmonics vari... [Phys. Rev. A 88, 033826] Published Mon Sep 16, 2013
    Keywords: Quantum optics, physics of lasers, nonlinear optics, classical optics
    Print ISSN: 1050-2947
    Electronic ISSN: 1094-1622
    Topics: Physics
    Published by American Physical Society (APS)
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