GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Chemical Society (ACS)  (75)
  • The American Association for Cancer Research (AACR)  (13)
  • American Institute of Physics (AIP)  (12)
  • 1
    Electronic Resource
    Electronic Resource
    Photodissociation of the hydroxyl radical (OH) at 157 nm (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 2491-2496 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation of the OH radical was studied at 157 nm via the detection of the product H atoms with the resonance fluorescence technique. OH radicals were produced in a fast flow cell from the reaction between H and NO2 and subsequently photodissociated by an excimer laser operating on the F2 emission. The quantum yield for photodissociation of OH was measured to be 1.10±0.28. The photodissociation cross section was calculated to be 6.6×10−18 cm2 (±25%) which is in good agreement with the work of Nee and Lee (Ref. 8).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460953
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Kondo resonance behavior of heavy fermion f-electron materials (invited) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6088-6091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Kondo properties of the impurity Anderson model provide a theoretical framework for relating thermodynamic and angle integrated electron spectroscopy data in many heavy fermion materials. We describe the success and the challenges of this approach, summarize a detailed analysis of CeSi2, and give a perspective on the relation to the lattice Anderson model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373421
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Nonlocal thermodynamic equilibrium effects of vibrationally excited NO (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 4707-4710 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The vibrational distribution of NO(X 2π) from the reaction O(3P)+NO2(X 2A1)→NO(X 2π,v‘)+O2 was studied at room temperature in a fast-flow system. Oxygen atoms were produced via the microwave-discharge dissociation of molecular oxygen with argon as the carrier gas. The reaction time between the NO2 molecules and the oxygen atoms was kept at ∼3 ms to minimize vibrational energy quenching. NO(X) radicals were detected via laser-induced fluorescence of the A 2Σ+←X 2π electronic transition. The relative vibrational population ratio of NO in the ground electronic state was determined to be 87.4±2.6% and 12.6±2.7% in the v‘=0 and v‘=1 levels, respectively. No higher vibrational states were observed. The NO vibrational population ratio measured in this study correlates well with the earlier observation of high vibrational excitation in O2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464974
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    ac-mode atomic force microscope imaging in air and solutions with a thermally driven bimetallic cantilever probe (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2082-2090 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ac imaging mode for atomic force microscopy (AFM) has been developed that employs a thermally driven bimetallic cantilever to sense surface topography. Oscillations are induced in a composite cantilever, comprising a Si3N4 layer and Au overcoat, by local heating with a resistive wire heater placed in close proximity to the cantilever. Cantilever bending occurs upon heating due to the difference in thermal expansion coefficients of the Si3N4 and Au layers. The magnitude of this bending is a function of the heat input, the cantilever geometry, the frequency of the excitation, and the thermal properties of the surrounding medium. A commercially available contact mode AFM has been modified to perform ac mode imaging by driving the cantilever with a peak-to-peak amplitude of 5–15 nm using resistive heating. The heating frequency was typically fixed near the cantilever's resonance frequency, which was in the range of 15–50 kHz in the air and 2–15 kHz in solution for the cantilevers used here. Simultaneous cantilever deflection and amplitude measurements during sample approach indicate that the cantilever free amplitude is damped upon surface contact. While imaging, a fixed damping of the cantilever oscillation is used as a feedback signal to maintain a constant tip-sample separation. Images with this ac imaging mode were obtained in both air and liquid environments. Results show an improvement in image quality in the ac mode over the corresponding contact images, which is the result of a decrease in lateral forces with an oscillating tip. This provides a simple and robust method for ac-mode AFM imaging in air and solutions that can be achieved with only slight modification to a commercially available contact-mode microscope. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148101
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Identification of plasma-sheath resonances in a parallel-plate plasma reactor (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5455-5457 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new, unexpected resonance has been observed in radio frequency, parallel plate plasma reactors. It has been explained using a linear model by analogy with the series resonance of probes. This discovery may be used in different ways; as a diagnostic, to measure the plasma density with high accuracy and, possibly, in improving the plasma performance in the low-pressure range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359242
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular-beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1731-1736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of chlorine-doped epitaxial layers of ZnSe have been grown by molecular-beam epitaxy. Measurements have been made of the relative intensity of the blue photoluminescence at room temperature, of the decay time of this emission, and of the concentrations of deep levels determined by photocapacitance techniques. A GaAs buffer layer improves the light emission and decreases the deep-level concentrations. Over the uncompensated donor concentration range 2×1016 to 3×1018 cm−3 the photoluminescence intensity, decay rate, and deep-level concentrations only vary by one order of magnitude. The results are consistent with the room-temperature blue emission resulting in recombination of a free hole with electrons on relatively isolated donors, this radiative recombination competing with a strong nonradiative Hall–Shockley–Read recombination via deep levels in the lower half of the energy gap. The significance of these results for the making of light-emitting diodes and lasers is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360202
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2947-2954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The film thickness, chemical state, and polarization screening for a-SiN1.4 :H films deposited by glow discharge over hydrogenated amorphous silicon (a-Si:H) were determined by x-ray photoelectron spectroscopy (XPS) and Auger spectroscopy. The nitride films were observed to be single phase and the escape depth for 1400-eV electrons in the a-SiN1.4 :H film was determined to be 30 A(ring). The band offsets for the a-Si:H/a-SiN1.4 :H interface were determined by XPS and Bremsstrahlung isochromat spectroscopy (BIS) to be 1.2 eV for the valence band and 2.2 eV for the conduction band, while the band gap for a-SiN1.4 :H was found to be 5.3 eV in accordance with the optical gap. By combining optical absorption measurements with the valence-band density of states and conduction-band density of states determined by electron spectroscopy, a semiquantitative estimate of the band tailing within the nitride gap was obtained. Correlation of the defect absorption with the electron spin resonance measurements suggest that the dangling bond defect level in a-SiN1.4 :H lies approximately 2.5 eV from the nitride valence band and is, therefore, somewhat below the a-Si:H conduction band. This study has demonstrated that BIS is an effective technique for determining the conduction-band offsets in heterostructures without relying on valence-band offset or band-gap measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337842
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Apparatus for measuring thermodynamic properties at low temperatures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4283-4294 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus has been constructed to provide thermodynamic data for models of planetary atmospheres. Often these data are needed at low temperatures, especially for the outer planets and their satellites, but are not readily available in the literature. The vapor pressure of propane was measured from 85 to 240 K to demonstrate one application of the apparatus for the acquisition of these types of data and to assess the performance of the system. This molecule was chosen because it is available in high purity, it has a well-established vapor-pressure curve, and it exhibits only one phase change over this temperature range. Our results compare favorably with the values available in the literature. The major components of the system include several types of pressure measuring instruments (1000 and 1 Torr capacitance manometers, spinning-rotor gauge), a residual gas analyzer to monitor sample purity in situ, and a helium closed-cycle refrigerator for cooling. The gas-handling manifold was constructed using materials and techniques adapted from the semiconductor production industry to minimize sample impurities which constitute a significant source of error in these types of measurements. Several unique design features were also incorporated in the construction of the sample cell to facilitate proper correction for thermal transpiration—an important factor for pressure measurements at low temperatures—and to ensure that the temperature sensor accurately reflected the sample temperature. The operational temperature and pressure limits are 62–240 K and 3×10−6–103 Torr, respectively. The lowest achievable temperature is governed by the no-load temperature of the first stage of the refrigerator and vertical thermal gradients along the sample cell walls, while the minimum obtainable pressure is set by the base pressure of the manifold and a slight outgassing rate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150093
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Decay time of the blue luminescence in ZnSe at room temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 63-65 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decay time of the blue luminescence at room temperature in n-type ZnSe grown by metalorganic chemical vapor deposition has been measured, using a mode-locked laser as excitation source and a streak camera for detection. Over an uncompensated donor concentration range 1017–1018 cm−3 the decay time is of the order of 100 ps. The short time is a result of strong nonradiative recombination: it is argued that the concentration of Hall–Shockley–Read recombination centers is high.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108820
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Relativistic recoil and the railgun (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 18-21 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the concept of electromagnetic momentum can be used to calculate the force acting on the projectile in a railgun, thereby refuting some recent papers on the subject.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346056
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...