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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (23)
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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (23)
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  • 1
    Online Resource
    Online Resource
    Measurement of total neutron cross section of natural lithium at China Spallation Neutron Source Back-n facility
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2022
    In:  Acta Physica Sinica Vol. 71, No. 5 ( 2022), p. 052901-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 5 ( 2022), p. 052901-
    Abstract: Lithium is one of the main materials of fuel carrier salt in molten salt reactors. Its neutron cross section provides an important basic datum for physical design of molten salt reactor core and for evaluating the safety of the core during operation. The total neutron cross sections of natural lithium samples with thickness values of 8.00 mm and 15.0 mm are measured, respectively, in an energy range from 0.4 eV to 20 MeV by using a neutron total cross section spectrometer (NTOX) with the transmission method at the Back-n white neutron source of China Spallation Neutron Source (CSNS Back-n) with a 76.0 m time-of-flight path. High quality experimental data are obtained, especially in the energy region of keV and below, which supply a significative supplement of the data, thereby providing more abundant and reliable experimental data for nuclear data evaluation of lithium. Additionally, a theoretical analysis is carried out under the guidance of 1/〈i〉v〈/i〉 law and the multilevel R-matrix theory. And the resonance parameters of n+〈sup〉6,7〈/sup〉Li reaction around the energy of 260 keV are extracted from the measured data.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.71.20211646
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2022
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  • 2
    Online Resource
    Online Resource
    Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2018
    In:  Acta Physica Sinica Vol. 67, No. 23 ( 2018), p. 237803-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 67, No. 23 ( 2018), p. 237803-
    Abstract: Ferroelectric random access memory (FRAM) is a promising memory for space application. The performance of FRAM under irradiation environment should be investigated, especially under proton irradiation environment, which dominates the particles in the space environment. The experiments on single event effects are carried out for two types of FRAMs (FM22L16 and FM28 V100) based on the proton cyclotron of China institute of atomic energy. Both dynamic and static mode are tested for each chip under the irradiation of proton in an energy range from 30 MeV to 90 MeV. Single event upsets (SEUs) and single event functional interrupts (SEFIs) are observed only on FM22L16, where the SEFI is recorded as a significantly transient error with or without memory cell upsets. The SEFI can be subdivided into soft SEFI and hard SEFI according to whether those significantly transient errors disappear or not when the irradiation is paused. Single event effect performances of FM22L16 are accurately described, and the SEFI cross section in an energy range from 50 MeV to 90 MeV is obtained experimentally. The cross section of SEFI increases with proton energy increasing and reaches 10〈sup〉-3〈/sup〉/cm〈sup〉2〈/sup〉 at 90 MeV. To further study the mechanism of SEFI, the pulsed laser beam with a wavelength of 1064 nm is used to pinpoint the sensitive area of SEFI in the FRAM. Pulsed laser experiment is easy to carry out when single pulsed laser radiates on the device from the back side. Results show that a certain part in peripheral circuit is detected as a sensitive area to SEFI. The sensitive area could be a register or buffer which is vulnerable to irradiation. Only SEUs are observed when the pulsed laser radiates others area of peripheral circuit and memory cell. A hypothesis that a micro latch-up in the CMOS-based peripheral circuit leads to the SEFI is proposed to explain the test results, for the CMOS-based peripheral circuit is sensitive to irradiation. The further reason is the energy deposition in silicon substrate by protons with energies ranging from 30 MeV to 90 MeV through nuclear reaction, which triggers the silicon controlled rectifier structure in the FRAM peripheral circuit. According to the hypothesis, a transient current should be generated in the peripheral circuit when the micro latch-up happens. The transient current is observed on the output of device by using a high frequency oscilloscope which demonstrates the reasonability of the hypothesis.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.67.20181225
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2018
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  • 3
    Online Resource
    Online Resource
    Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2020
    In:  Acta Physica Sinica Vol. 69, No. 7 ( 2020), p. 078501-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 69, No. 7 ( 2020), p. 078501-
    Abstract: In this paper, the total dose effect on AlGaN/GaN high-electron-mobility transistor (HEMT) devices after 〈sup〉60〈/sup〉Co γ-ray irradiation with a total dose of 1 Mrad(Si) was investigated at different biases (〈i〉V〈/i〉〈sub〉GS〈/sub〉 = –3 V, 〈i〉V〈/i〉〈sub〉DS〈/sub〉〈italic/〉 = 0.5 V; 〈i〉V〈/i〉〈sub〉GS〈/sub〉 = –1.9 V, 〈i〉V〈/i〉〈sub〉DS〈/sub〉 = 0.5 V; 〈i〉V〈/i〉〈sub〉GS〈/sub〉 = 0 V, 〈i〉V〈/i〉〈sub〉DS〈/sub〉 = 0 V). The experimental results were analyzed using 1/〈i〉f〈/i〉 low-frequency noise and direct current electrical characteristics. The electrical parameters degraded mostly under zero bias condition because of the radiation-induced defect charge of the oxide layer and the interface state. Wherein, the saturation drain current was reduced by 36.28%, and the maximum transconductance was reduced by 52.94%. The reason was that the oxide dielectric layer of AlGaN/GaN HEMT devices generated electron-hole pairs under γ-ray irradiation, and most of the electrons were quickly swept out of the oxide region corresponding to the gate-source and gate-drain spacer regions, and most of the holes remained in the oxide. Under the action of the built-in electric field, holes slowly moved towards the interface between the oxide and AlGaN, which depleted the two-dimensional electron gas of the channel.According to the McWhorter model, the low-frequency noise in the AlGaN/GaN HEMT devices results from random fluctuations of carriers, which are caused by the capture and release processes of carriers by traps and defect states in the barrier layer. The extracted defect densities in AlGaN/GaN HEMT devices increased from 4.080 × 10〈sup〉17 〈/sup〉cm〈sup〉–3〈/sup〉·eV〈sup〉–1〈/sup〉 to 6.621 × 10〈sup〉17 〈/sup〉cm〈sup〉–3〈/sup〉·eV〈sup〉–1〈/sup〉 under the condition of zero bias, and the result was in good agreement with test results of the direct currentelectrical characteristics. The damage mechanism was the radiation-induced defect charge in the oxide layer and the interface state, which increased the flat-band voltage noise power spectral density of the AlGaN/GaN HEMT devices. According to the charge tunneling mechanism, the spatial distribution of defect in the barrier layer was extracted, and the result also proved that the densities of radiation-induced defect charges under zero bias were more than the other biases. The experimental results showed that zero bias was the worst bias for AlGaN/GaN HEMT devices irradiation.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.69.20191557
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2020
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  • 4
    Online Resource
    Online Resource
    Simulation research on single event effect of N-well resistor
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2023
    In:  Acta Physica Sinica Vol. 72, No. 2 ( 2023), p. 026102-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 72, No. 2 ( 2023), p. 026102-
    Abstract: In this paper, the single event effect of N-well resistor is simulated by using the technology computer aided design (TCAD) software. The results indicate that a single heavy ion incident into the N-well resistor will make a disturbance in the output current of the device. The working mechanism of the N-well resistor and the physical mechanism introduced by the single event effect are studied. The results show that ion-induced electron-hole pairs neutralize the depletion region in the N-well substance that provides high impedance for the device, resulting in the instantaneous increase of the output current. The larger the destroyed area of the depletion region in the N-well resistor, the higher the peak value of the transient output current is. But the ion-induced disturbance can disappear with the collection of the high concentration of excess carriers in the N-well structure. However, the unique aspect ratio design of the N-well resistor makes only the carriers close to the input drift to output under the electric field. And, the drift motion of carriers takes a lot of time because of the long transport distance, which leads to low efficiency of collecting excess carriers and a long duration of ion-induced disturbance in the N-well resistor. Besides, some other factors that can affect the single event effect in the N-well resistors are also studied in this paper. The results show that the higher the LET value of ions and the farther the incident location from the input, the more serious the single event effect of N-well resistance is. In addition, properly shortening the length of the N-well resistor and increasing the input voltage of the N-well resistor can enhance its resistance to single event effect.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Article
    DOI: 10.7498/aps.72.20220125
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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  • 5
    Online Resource
    Online Resource
    Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2018
    In:  Acta Physica Sinica Vol. 67, No. 16 ( 2018), p. 166101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 67, No. 16 ( 2018), p. 166101-
    Abstract: Ferroelectric random access memory (FeRAM) has superior features such as low power consumption, short write access time, low voltage, high tolerance to radiation. Data about the total ionizing dose (TID) radiation effects of FeRAM have not been rich in the literature so far. Experimental study of the ionizing radiation effect of FeRAM is carried out based on Co-60 γ rays and 2 MeV electrons. And the TID radiation damages to the FeRAM in the dynamic biased, static biased and unbiased case are studied. The direct current and alternating current parameters are tested by J-750. The test results indicate that the stored information about the memory cell has no change before failure, the ferroelectric capacitors are still able to hold the data. Accordingly, the TID failure of the FeRAM should be mainly ascribed to the poor TID hardness of the peripheral complementary metal oxide semiconductor circuits. Besides, three types of electric fields from three working conditions can result in different generation and recombination rates of electronhole pairs. For static biased case, the internal electric field in the FeRAM is constant. It can lead to high net production of the electronhole pairs and a great number of trapped charges. Hence the radiation damage in the static biased case is most serious. With the increase of the total radiation dose, the electrical parameters of FeRAM have different degradations. Part of the parameters that can be detected by J-750, may lapse before they are detected online. Standby current, operating power supply current, leakage current and output low voltage are radiationsensitive parameters of FeRAM through analyzing the test data. And, other parameters, which have slight changes, have small effect on the degradation of the device. Furthermore, the electron accelerator is used in electron irradiation experiment. By comparing the results of the two kinds of radiation tests, it is discovered that the electrons tend to cause lighter TID degradation than Co-60 γ rays because of the high density of electrons in the electron irradiation environment and low net production rate of electronhole pairs. In addition, the electrons have weaker penetration than Co-60 γ rays due to low energy. The device packaging, the upper metal layers can also influence the experimental result of electron irradiation. The above conclusions provide a reference value for the total dose effect of FeRAM and will be of great significance for studying the radiation hardening of FeRAM.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.67.20180829
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2018
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  • 6
    Online Resource
    Online Resource
    Effect of PbI2 on optical properties of Te-based far infrared transmitting chalcogenide glasses
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 11 ( 2011), p. 114212-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 11 ( 2011), p. 114212-
    Abstract: A novel series of Ge-Te-PbI2 chalcogenide glasses is prepared by traditional melt-quenching method, and the glass-forming region is determined. X-ray diffraction, differential thermal analysis, visible/near-infrared absorption spectroscopy and infrared transmission spectra are adopted to analyze the composition, the structure, and the performance of the Te-based glasses system with an addition of PbI2. The Tauc equation is used to calculate the direct and the indirect optical band gaps, based on the metallization criterion and the band gap energy theory, the relationship between optical band gap and composition is investigated. The results show that with the addition of PbI2, the glasses-forming ability and the thermal stability are improved, Also, the density and the refractive index of glass sample both increase, the short-wavelength edges shift to ward a longer wavelength, the band gap decreases and the infrared cut-off wavelength of glass is 25 m which keeps almost unchanged. The series of glasses can be adopted to fabricate the far-IR optical wave-guide devices.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.114212
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2011
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  • 7
    Online Resource
    Online Resource
    Observation of particle manipulation with axial plane optical microscopy
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2017
    In:  Acta Physica Sinica Vol. 66, No. 1 ( 2017), p. 010702-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 66, No. 1 ( 2017), p. 010702-
    Abstract: Optical micromanipulation of particles based on the optical trapping effect induced by the interaction between light and particles has been successfully applied to many interdisciplinary fields including biomedicine and material sciences. When particles are trapped in three dimensions, the conventional wide-field optical microscopy can only monitor the movement of the trapped particles in a certain transverse plane. The ability to observe the particle movement along light trajectories is limited. Recently, a novel method named axial plane optical microscopy(APOM) has been developed to directly image the axial plane that is parallel to the optical axis of an objective lens. The APOM observes the axial plane by converting the axial information of a sample into that of a transverse plane by using a 45°-tilted mirror. In this paper, we propose and demonstrate that the APOM serves as an effective tool for observing the axial movement of particles in optical tweezers. By combining with a conventional wide-field optical microscopy, we show that both transverse and axial information can be acquired simultaneously for the optical micromanipulation. As in our first experimental demonstration, we observe two particles which are trapped and aligned along the optical axis. From the transverse image, only one particle is observable, and it is difficult to obtain the information along the axial direction. However, in the axial plane imaging, the longitudinal dipolar structure formed by the two particles is clearly visible. This clearly demonstrates the APOM imaging capability along the axial axis. The numerically simulations on the trapping focal spot against the position of a collimating lens agree well with our experimental APOM results. Furthermore, we directly observe the dynamic capture process of a single trapped particle in transverse plane by conventional wide-field optical microscopy as well in axial plane by the APOM, and can obtain the 3D information rapidly and simultaneously. We point out that the observable axial dynamic range is about 30 μm. Taking advantages of no requirement of scanning and data reconstruction, the APOM has potential applications in many fields, including optical trapping with novel beams and 3D imaging of thick biological specimens.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.66.010702
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2017
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  • 8
    Online Resource
    Online Resource
    Experimental studies on the opacity of dense aluminum compressed by a laser-driven shock waves
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2013
    In:  Acta Physica Sinica Vol. 62, No. 12 ( 2013), p. 125202-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 12 ( 2013), p. 125202-
    Abstract: The high-precise opacity of the dense plasma has important applications in the design and simulation of fusion research, and in plasma diagnostics. Base on the novel technique of point-projection backlighting, a broadband high-resolution elliptical crystal X-ray spectrometer, which is used to measure simultaneously the self-emission spectrum, the backlighting source spectrum, and the transmission spectrum in one shot, is designed on the Shengguang-II laser facility. The process of the colliding-shock-compressed sample by laser-driven shock waves is also investigated using a one-dimensional radiation hydrodynamics code MULTI. In the measurement, the dense plasma, produced in aluminum by colliding shocks driven by laser beams, reaches a peak density several times that of a solid, and the short backlighting from the 3d-4f transition bands of ytterbium is used as an absorption source for time- and space-resolving diagnostics. Several experimental results are obtained, they are the X-ray source spectrum, the transmission spectrum, and the self-emission spectrum of the dense Al sample in one shot obtained by using the point-projection method, as well as X-ray-absorption fine-structure spectra, and the changes in the K-shell photo-absorption edge of aluminum as it was compressed by a laser-driven shock waves. The transmissivity distribution and red- shift around 80 m (with respect to the cold value of 1.56 keV) of the dense aluminum are also obtained. The data obtained are further analysed. As a result, a new theoretical model is developed.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.62.125202
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2013
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  • 9
    Online Resource
    Online Resource
    Diagnosis of high-Z plasma with soft X-ray laser probe
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2014
    In:  Acta Physica Sinica Vol. 63, No. 21 ( 2014), p. 215203-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 63, No. 21 ( 2014), p. 215203-
    Abstract: It is important to diagnose electron density of a plasma irradiated by lasers for inertial confinement fusion, in high energy density physics and related fields, especially for measuring high-Z plasma near the interface. Use of soft X-ray laser as a probe is an important method in diagnosis of plasma electron density distribution. However, it is difficult to carry out the research in high-Z laser plasma, because of the problem of excessive plasma spontaneous radiation. In view of the characteristics of soft X-ray laser, several specific experimental techniques have been developed. By using these techniques, which can greatly suppress effects of spontaneous radiation, diagnosis of high-Z plasma with soft X-ray laser probe method becomes possible. As a typical example, an experiment of diagnosing gold plasma is performed and clear images are obtained, indicating that the techniques are effective and feasible.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.63.215203
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2014
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  • 10
    Online Resource
    Online Resource
    Broadband two-photon absorption and optical power limiting properties of a novel organic compound
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2003
    In:  Acta Physica Sinica Vol. 52, No. 8 ( 2003), p. 1929-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 52, No. 8 ( 2003), p. 1929-
    Abstract: The two-photon absorption (TPA) property and optical power limiting behaviour of a novel double-conjugated segment organic molecule have been investigated, and its TPA spectrum and optical power limiting curve have been experimentally obtai ned. Strong TPA and broadband optical power limiting properties from 700 nm to 1 100 nm in the near infrared region have been demonstrated in the tetrahydrofuran (THF) solution with 1×10-2mol/L concentration. It has three peaks o f TPA cross section at 730,850 and 980 nm. The maximum TPA cross section is σ′ 2＝25.9×10-47cm4·s·photon-1 at 850nm, which is about 1-2 orders of magnitude larger than usual organic molecules.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.52.1929
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2003
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