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  • 1
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    Online Resource
    STUDY OF FAST IONIC CONDUCTOR BY POSITRON ANNIHILATION
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1987
    In:  Acta Physica Sinica Vol. 36, No. 4 ( 1987), p. 514-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 36, No. 4 ( 1987), p. 514-
    Abstract: The fast ionic conductor, LiCl-LiF-B2O3, LiF-B2O3 in microcrystalline and non-crystalline forms were studied by positron annihilation. It was found in all cases, the intensity of the mid-lifetime component I2 depends directly on the electrical conductivity σ. Additional measurement of Doppler broadening on the same systems indicated that voids between the microcrystal and network phases provid more transfer path for Li ions, thus lead to higher conductivity in the microcrystalline form of LiCl-LiF-B2O3 system.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.36.514
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1987
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  • 2
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    Online Resource
    High-pressure synthesis and special physical properties of several ordered perovskite structures
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2017
    In:  Acta Physica Sinica Vol. 66, No. 3 ( 2017), p. 030201-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 66, No. 3 ( 2017), p. 030201-
    Abstract: Strongly correlated electronic systems with ABO3 perovskite and/or perovskite-like structures have received much attention. High pressure is an effective method to prepare perovskites, in particular A-site and/or B-site ordered perovskites. In these ordered perovskites, both A and B sites can accommodate transition-metal ions, giving rising to multiple magnetic and electrical interactions between A-A, B-B, and A-B sites. The presence of these new interactions can induce a wide variety of interesting physical properties. In this review paper, we will introduce an A-site ordered perovskite with chemical formula AA3'B4O12 and two A- and B-site ordered perovskites with chemical formula AA3'B2B2'O12. All of these compounds can be synthesized only under high pressure. In the A-site ordered LaMn3Cr4O12 with cubic perovskite structure, magnetoelectric multiferroicity with new multiferroic mechanism is found to occur. This is the first observation of multiferroicity appearing in cubic perovskite, thereby opening the way to exploring new multiferroic materials and mechanisms. In the A- and B-site ordered perovskite CaCu3Fe2Os2O12, a high ferrimagnetic Curie temperature is observed to be around 580 K. Moreover, this compound exhibits semiconducting conductivity with an energy band gap of about 1 eV. The CaCu3Fe2Os2O12 thus provides a rare single-phase ferrimagnetic semiconductor with high spin ordering temperature well above room temperature as well as considerable energy band gap. Moreover, theoretical calculations point out that the introducing of A'-site Cu2+ magnetic ions can generate strong Cu-Fe and Cu-Os spin interactions. As a result, this A- and B-site ordered perovskite has a much higher Curie temperature than that of the B-site only ordered perovskite Ca2FeOsO6 (~320 K). In addition, we also for the first time prepare another A- and B-site ordered perovskite LaMn3Ni2Mn2O12. In the reported ordered perovskites with Mn3+ at the A' site, the A'-B intersite spin interaction is usually negligible. In our LaMn3Ni2Mn2O12, however, there exists the considerable A'-B interaction, which is responsible for the rare formation of B-site orthogonal spin structure with net ferromagnetic moment.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.66.030201
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2017
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  • 3
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    Online Resource
    Research progress of multiferroicity in Bi-layered oxide single-crystalline thin films
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2018
    In:  Acta Physica Sinica Vol. 67, No. 15 ( 2018), p. 157702-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 67, No. 15 ( 2018), p. 157702-
    Abstract: Room temperature multiferroics with a single phase is very rare, and magnetic elements doped Bi-layered Aurivillius oxides are an important family of room temperature single phase multiferroics. However, due to the lack of single crystalline samples, the multiferroic related researches of these materials are mostly based on polycrystalline bulk or thin film samples. And the multiferroic characterizations are performed mostly by using the bulk type of samples. Therefore the studies of the origin and mechanism of the multiferroicity of these materials are extremely difficult. Recently, multiple magnetic elements doped singlecrystalline thin films have been successfully prepared, which makes it possible to study the physics mechanism of the Bi-layered Aurivillius oxides of multiferroicity. The current study shows that most of the single-crystalline thin films exhibit in-plane orientated spontaneous ferroelectric polarization and very weak room temperature magnetism. Moreover, at low temperatures the single-crystalline films exhibit a second magnetic transition. The resonant inelastic X-ray scattering experiments indicate that the doped structure exhibits a changed crystal field split, which may enhance the weak ferromagnetism through Dzyaloshinskii-Moriya interaction. On the other hand, the polarized neutron reflectivity experiments reveal that the single-crystalline thin film possesses much weaker room temperature magnetism than the bulk sample, which indicates that the origin of the magnetism and the magnetoelectric coupling in the single-crystalline samples are different from those in the polycrystalline samples. The current study of the multiferroicity in the single-crystalline Bi-layered Aurivillius thin film opens the road to designing better multiferroic systems of the Aurivillius materials.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.67.20181159
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2018
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  • 4
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    Online Resource
    PRECISE MEASUREMENT OF THE POSITRON ANNIHILATION RADIATION IN ALUMINUM
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1982
    In:  Acta Physica Sinica Vol. 31, No. 7 ( 1982), p. 945-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 31, No. 7 ( 1982), p. 945-
    Abstract: The radiation of positron annihilation in two aluminum samples from different origins was measured with the Ge(Li) detector. Using the 482 keV γ peak of 181Hf as reference, the relative positions of the annihilation peak centers were repetitively determined, the precision of the determination reached ± 6 eV. The results show that the rest mass of electron in these two different aluminum samples is consistent on 10 eV level.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.31.945
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1982
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  • 5
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    Online Resource
    ANALYSIS OF POSITRON ANNIHILATION LIFETIME SPECTRUM BY FAST FOURIER TRANSFORM
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1994
    In:  Acta Physica Sinica Vol. 43, No. 4 ( 1994), p. 547-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 43, No. 4 ( 1994), p. 547-
    Abstract: This work is the first attempt to decompose the positron annihilation lifetime spectrum into the form of a frequency spectrum by Fast Fourier Transform (FFT) technique. Each real peak in the frequency spectrum indicates a lifetime component. The peak position corresponds to the annihilation constants, the peak area is proportional to the intensity of the component. The principle of this method is described in this paper. We thoughtfully consider the effects of the instrumental resolution function and the statistical error. A program is compiled with Turbo C and successfully operated on PC ALR-286. The analysis results for some simulated spectrum are satisfactory. The work indicates that the advantages of this method are its simplicity, rapidity, less effect of the instrument resolution function and no guessing what the components are before analysis.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.43.547
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1994
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  • 6
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    Online Resource
    INVESTIGATION OF THE RECOVERY OF DEFORMED IRON BY POSITRON ANNIHILATION
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1982
    In:  Acta Physica Sinica Vol. 31, No. 1 ( 1982), p. 126-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 31, No. 1 ( 1982), p. 126-
    Abstract: The recovery behavior of the 60% deformed iron in various stages of isochronal annealing has been investigated by positron annihilation technique. The experimental results show that both the average life time τ and the lineshape parameter S of the positron annihilation may be expressed as functions of annealing temperatures. Life time τf of the positron annihilated in the perfect lattice is found to be 111 ± 1 ps, while τd in the defect lattice to be 162 ± 1 ps. Trapping rates and τ1 are calculated, these values are in good agreement with those predicted by trapping theory. It is obtained from the calculation that the rang of fractional concentration of defect trapping positron is 10-7-10-4.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.31.126
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1982
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  • 7
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    Online Resource
    MEASUREMENT OF 3γ ANNIHILATION OF POSITRON USING Ge (Li) DETECTOR
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1983
    In:  Acta Physica Sinica Vol. 32, No. 3 ( 1983), p. 417-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 32, No. 3 ( 1983), p. 417-
    Abstract: A method for measuring the positron 3γ annihilation, with Ge(Li) detector is introduced, in which the relative yields of 3γ annihilation is measured by the counts of the 511 keV peak only. We call it the "peak method", and compare it with the "peak-valley method."
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.32.417
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1983
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  • 8
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    Online Resource
    Ridge-type suspended waveguide Brillouin laser
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2022
    In:  Acta Physica Sinica Vol. 71, No. 2 ( 2022), p. 024203-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 2 ( 2022), p. 024203-
    Abstract: As is well known, the on-chip waveguide with high Brillouin gain has many applications in the field of photonics. Brillouin lasers on silicon substrates are widely used in frequency tunable laser emission, mode-locked pulsed lasers, low-noise oscillators and optical gyroscopes. However, in a silicon-based Brillouin laser, a long waveguide length is still used to achieve Brillouin laser output, which is not conducive to on-chip integration. In this work is proposed a new type of waveguide structure consisting of chalcogenide As〈sub〉2〈/sub〉S〈sub〉3〈/sub〉 rectangles and an air slit. Owing to the existence of the air gap, the radiation pressure makes the enhancement of Brillouin nonlinearity much higher than the enhancement caused only by the material nonlinearity. This makes the Brillouin gain reach 1.78 × 10〈sup〉5〈/sup〉 W〈sup〉–1〈/sup〉·m〈sup〉–1〈/sup〉, which is nearly 10 times larger than the previously reported backward SBS gain of 2.88 × 10〈sup〉4〈/sup〉 W〈sup〉–1〈/sup〉·m〈sup〉–1〈/sup〉, resulting in phonon frequency tuning in a 4.2–7.0 GHz range. This method provides a new idea for designing nano-scaled optical waveguides for forward stimulated Brillouin scattering, and at the same time, this enhanced broadband coherent phonon emission paves the way for improving the hybrid on-chip CMOS signal processing technology.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.71.20211539
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2022
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  • 9
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    Online Resource
    Properties of La and V codoped Bi4Ti3O12 thin film prepared by sol-gel method
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2010
    In:  Acta Physica Sinica Vol. 59, No. 2 ( 2010), p. 1302-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 59, No. 2 ( 2010), p. 1302-
    Abstract: Bi4Ti3O12（BIT） and Bi3.25La0.75Ti2.97V0.03O12（BLTV） thin films were fabricated on the Pt/TiO2/SiO2/p-Si（100） substrate using sol-gel method. The effect of La and V codoping on the structural and electrical properties of BIT thin films was investigated. BIT thin film exhibits predominantly c-axis orientation while BLTV thin film shows random orientation. Raman spectroscopy shows that TiO6 （or VO6） symmetry decreases and Ti—O （or V—O） hybridization increases with V substitution. The residual polarization of BLTV thin film is 25.4 μC/cm2, which is larger than that of BIT thin film （9.2 μC/cm2）. BLTV thin film also shows excellent fatigue endurance and low leakage current characteristics, which implies the oxygen vacancies are suppressed by La and V codoping in the thin films.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.59.1302
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2010
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  • 10
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    Online Resource
    Microstructure study of YBa〈sub〉2〈/sub〉Cu〈sub〉3〈/sub〉O〈sub〉7-〈i〉δ〈/i〉〈/sub〉 thin film with synchrotron-based three-dimensional reciprocal space mapping
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2023
    In:  Acta Physica Sinica Vol. 72, No. 4 ( 2023), p. 046101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 72, No. 4 ( 2023), p. 046101-
    Abstract: High-temperature superconducting films can be used for fabricating the cutting-edge high-temperature superconducting microwave devices because of their low microwave surface resistances. However, the microwave surface resistances of high-temperature superconducting materials are particularly sensitive to microstructure due to their special two-dimensional superconducting mechanisms and extremely short superconducting coherence lengths. To investigate the correlations between microstructure and microwave surface resistance of high-temperature superconducting materials, YBa〈sub〉2〈/sub〉Cu〈sub〉3〈/sub〉O〈sub〉7-〈i〉δ〈/i〉〈/sub〉 (YBCO) films with different thickness are grown on (00l)-oriented MgO single-crystal substrates by using the pulsed laser deposition (PLD) technique. Electrical measurements reveal that their superconducting transition temperatures and room temperature resistances do not show significant difference. However, their microwave surface resistances in superconducting state display a significant difference. The characterizations of the microstructures of YBCO films by synchrotron radiation three-dimensional reciprocal space mapping(3D-RSM) technique show that the number of the grains with CuO〈sub〉2〈/sub〉 face parallel to the surface (c crystals), and the consistency of grain orientation are the main causes for the difference in microwave surface resistance.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Article
    DOI: 10.7498/aps.72.20221776
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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