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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (22)
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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (22)
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  • 1
    Online Resource
    Online Resource
    Magnatic field induced phase transition and transport properties in phase separated Eu0.5Sr0.5MnO3 system
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2009
    In:  Acta Physica Sinica Vol. 58, No. 5 ( 2009), p. 3309-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 58, No. 5 ( 2009), p. 3309-
    Abstract: The structure，electrical and magnetic properties of the half doping phase separated Eu0.5Sr0.5MnO3 manganite have been systematically studied. The results show that Eu0.5Sr0.5MnO3 compound has the O′ orthorhombic structure and shows typical Jahn-Teller distortion. It is found that ferromagnetic phase turn up near 75 K and evident split of field cooling （FC） and zero field cooling （ZFC） under 4000 A/m is observed around 42 K. The ac susceptibility curve shows also a sharp peak around 42 K，indicating cluster-glass state rather than a spin glass state at 42 K. Meanwhile，throughout the measuring temperature range，the electric transport shows insulating behavior and there is no insulator-metal （I-M） transition. However，an applied magnetic field of 1.6×105 A/m can induce I-M transition. The conducting behavior of Eu0.5Sr0.5MnO3 is well fitted by the Mott variable range hopping （VRH） model. All these phenomena indicate that for the ground state of Eu0.5Sr0.5MnO3，there exists the competition mechanism of several complex magnetic interactions. The study provides abundant experimental information to underdtand the mechanism of the strongly electron correlated system.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.58.3309
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2009
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  • 2
    Online Resource
    Online Resource
    Research progress of quantum coherence performance and applications of micro/nano scale rare-earth doped crystals
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2023
    In:  Acta Physica Sinica Vol. 72, No. 12 ( 2023), p. 120302-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 72, No. 12 ( 2023), p. 120302-
    Abstract: Rare-earth ion doped crystals possess stable solid state physicochemical properties and long optical coherence time and spin coherence time, thus showing important development prospect in quantum information science and technology area. Investigations on macroscopic bulk rare-earth single crystals have obtained many promising results, especially in the field of optical quantum memory. With the rapid development of quantum information science, a variety of new functions or multifunctional integrations are found in rare earth crystal systems, such as on chip quantum storage, microwave to optical frequency conversion, scalable quantum single photon sources, and quantum logic gates. As a result, beyond the macroscopic bulk rare-earth single crystals, micro/nano-scale rare-earth crystals have received much attention in recent years and they are regarded as promising candidates in highly integrated hybrid quantum systems and miniaturized quantum devices. Moreover, wet chemical method synthesized micro/nano-scale rare-earth crystals have lower growth difficulty and more flexible manipulation in volume, shape and composition. Therefore, exploring high-performance micro/nano-scale rare-earth crystals and precisely manipulating their quantum states have become one of the important directions in today’s quantum information science and technology research. In this review, we first briefly introduce the basic concepts and high resolution spectroscopic techniques that are commonly used in rare earth ion doped crystals for quantum information science and technologies, such as hole burning technique and photon echo technique. Then we summarize comprehensively recent research status and development trends of rare earth ion doped polycrystalline nanoparticles, thin films, single crystal based micro systems, and some other micro/nano-scale rare earth platforms in terms of material fabrication, quantum coherence property, dephasing mechanisms, and also quantum device explorations. The latest research advances in quantum information applications such as quantum storage, quantum frequency conversion, quantum single photon sources and quantum logic gates are given. Finally, we discuss the possible optimization directions and strategies to improve the component design, material synthesis and quantum performance of micro/nano-scale rare earth crystals and their related quantum devices. This review highlights that the micro/nano-scale rare earth crystals may offer many new possibilities for designing quantum light-matter interfaces, thus are promising quantum systems to develop scalable and integrated quantum devices in the future.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Article
    DOI: 10.7498/aps.72.20222166
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2023
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  • 3
    Online Resource
    Online Resource
    Study on the lattice constants and energy band properties of Be and Ca doped wurtzite ZnO
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 22 ( 2012), p. 227101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 22 ( 2012), p. 227101-
    Abstract: The lattice constants, energy band properties and formation energies of BexZn1-xO, CayZn1-yO and BexCayZn1-x-yO alloys of Be and Ca doped wurtzite ZnO alloys are calculated by the plan-wave pseudopotential method with GGA in density functional theory (DFT). The theoretical results show the lattice constants of BexZn1-xO alloy decrease with Be content increasing, which is contrary to the scenario of CayZn1-yO alloy. For the energy band properties of Be_xZn1-xO and CayZn1-yO alloys, the valence band maxima (VBM) are determined by O 2p states and the conduction band minima (CBM) is occupied by Zn 4s states, and their band gaps are broadened when Be or Ca content is increased. The lattice constant of Be0.125Ca0.125Zn0.75O alloy of Be and Ca co-doped ZnO is matched with that of ZnO and its energy bandgap is greater than that of ZnO, so Be0.125Ca0.125Zn0.75O /ZnO structure is suitable for high-quality ZnO based device. In addition, the stability of Be0.125Ca0.125Zn0.75O alloy is also analysed.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.61.227101
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2012
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  • 4
    Online Resource
    Online Resource
    Theoretical study of the effect of W-doping on the conductivity of β-Ga2O3
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2014
    In:  Acta Physica Sinica Vol. 63, No. 5 ( 2014), p. 057102-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 63, No. 5 ( 2014), p. 057102-
    Abstract: The conductivity of W-doped β-Ga2O3 is investigated by using the ultra-soft pseudopotential (USP) approach of the plane-wave based upon density functional theory. The optimized structural parameters, total electron density of states, and energy band structures of β-Ga2(1-x)W2xO3 (x=0, 0.0625, 0.125) are calculated. It is found that the volumes are slightly increased and the total energies are going up in the Ga2(1-x)W2xO3 system with increasing W-doping concentration, which causes the system instability. When the W concentration is smaller, the calculated conductivity and electronic mobility are higher, but when the W concentration is increased, the average electron effective mass becomes bigger and the energy gap becomes narrower. The results are consistent with experimental data.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.63.057102
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2014
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  • 5
    Online Resource
    Online Resource
    ELECTRIC DISCHARGE PUMPED XeBr LASER WITH HIGH POWER AND HIGH EFFICIENCY
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1980
    In:  Acta Physica Sinica Vol. 29, No. 6 ( 1980), p. 799-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 29, No. 6 ( 1980), p. 799-
    Abstract: The results of studies on XeBr laser output behaviour are reported; in this laser, HBr, BBr3 and C2F4Br2 are used as bromine donor. The maximum energy obtaind is 6 mJ. Volume energy density and efficiency are 0.4J/L, 0.14% respectively. Filially, we propose a way for improving the lasing output level.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.29.799
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1980
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  • 6
    Online Resource
    Online Resource
    Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2018
    In:  Acta Physica Sinica Vol. 67, No. 2 ( 2018), p. 027101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 67, No. 2 ( 2018), p. 027101-
    Abstract: Optoelectronic integration technology which utilizes CMOS process to achieve the integration of photonic devices has the advantages of high integration, high speed and low power consumption. The Ge1-xSnx alloys have been widely used in photodetectors, light-emitting diodes, lasers and other optoelectronic integration areas because they can be converted into direct bandgap semiconductors as the Sn component increases. However, the solid solubility of Sn in Ge as well as the large lattice mismatch between Ge and Sn resulting from the Sn composition cannot be increased arbitrarily:it is limited, thereby bringing a lot of challenges to the preparation and application of direct bandgap Ge1-xSnx. Strain engineering can also modulate the band structure to convert Ge from an indirect bandgap into a direct bandgap, where the required stress is minimal under biaxial tensile strain on the (001) plane. Moreover, the carrier mobility, especially the hole mobility, is significantly enhanced. Therefore, considering the combined effect of alloying and biaxial strain on Ge, it is possible not only to reduce the required Sn composition or stress for direct bandgap transition, but also to further enhance the optical and electrical properties of Ge1-xSnx alloys. The energy band structure is the theoretical basis for studying the optical and electrical properties of strained Ge1-xSnx alloys. In this paper, according to the theory of deformation potential, the relationship between Sn component and stress at the critical point of bandgap transition is given by analyzing the bandgap transition condition of biaxial tensile strained Ge1-xSnx on the (001) plane. The energy band structure of strained Ge1-xSnx with direct bandgap at the critical state is obtained through diagonalizing an 8-level kp Hamiltonian matrix which includes the spin-orbit coupling interaction and strain effect. According to the energy band structure and scattering model, the effective mass and mobility of carriers are quantitatively calculated. The calculation results indicate that the combination of lower Sn component and stress can also obtain the direct bandgap Ge1-xSnx, and its bandgap width decreases with the increase of stress. The strained Ge1-xSnx with direct bandgap has a very high electron mobility due to the small electron effective mass, and the hole mobility is significantly improved under the effect of stress. Considering both the process realization and the material properties, a combination of 4% Sn component and 1.2 GPa stress or 3% Sn component and 1.5 GPa stress can be selected for designing the high speed devices and optoelectronic devices.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.67.20171969
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2018
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  • 7
    Online Resource
    Online Resource
    DISCHAGE-PUMPED MULTIWAVELENGTH LASER
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1980
    In:  Acta Physica Sinica Vol. 29, No. 7 ( 1980), p. 950-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 29, No. 7 ( 1980), p. 950-
    Abstract: The coherent radiation of ten species, F,Ne,N2,N2+,XeF,XeCl,XeBr, KrF, KrCl, ArF were obtained by using a high pressure UV pre-ionization dischage device and varing lasing gases in a laser. The laser parameters and the output behaviour were also given.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.29.950
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1980
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  • 8
    Online Resource
    Online Resource
    Theoretical study of high-order harmonics and single ultrashort attosecond pulse generated by optimized combination of laser field
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2022
    In:  Acta Physica Sinica Vol. 71, No. 23 ( 2022), p. 233204-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 23 ( 2022), p. 233204-
    Abstract: High-order harmonic generation, which is a hot topic of strong ultrafast fields, is one of the most important ways for obtaining the ultraviolet attosecond sources, and has a very wide application prospect. This work focuses on the challenges of the generation of either short or high attosecond pulses. We present the research progress of the high-order harmonics and attosecond pulse generation, and propose an effective and feasible method, and show some results. Specifically, combining the time-dependent Schrödinger equation and new unconstrained optimization algorithm, the objective function with the aim of the widest supercontinuum plateau of He atom is designed and the optimized two-color and three-color laser fields are obtained. The supercontinuum spectra extend up to 100 harmonic orders for the case of the optimized two-color laser field. As a result, a single ultrashort attosecond pulse of 25 as is produced. For the three-color case, the supercontinuum spectra reach up to 170 harmonic orders, and the width of single shortest attosecond pulse obtained by superposing pulses from low order (110 order) to high order (280 order) is obtained to be 17 as . Taking the optimized two-color laser field for example, the macroscopic medium propagation is discussed by solving the Maxwell equation. The results show that the selectivity of quantum trajectories from far-field space distribution can obtain the single ultra-short attosecond pulse.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Article
    DOI: 10.7498/aps.71.20221298
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2022
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  • 9
    Online Resource
    Online Resource
    INVESTIGATION OF NEUTRALIZED (NH4)2S SOLUTION-PASSIVATED GaAs(100) SURFACES
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1998
    In:  Acta Physica Sinica Vol. 47, No. 1 ( 1998), p. 68-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 47, No. 1 ( 1998), p. 68-
    Abstract: Synchrotron radiation photoelectron spectroscopy (SRPES) combined with scanning electron microscopy (SEM) and gravimetric method is used to study the neutralized (NH4)2S-passivated GaAs(100) surfaces- Compared to the conventional (NH4)2S alkaline solution treatment, a thicker Ga sulfide layer and stronger Ga—S bonding on GaAs surface can be formed by dipping GaAs in neutralized (NH4)2S solution- Gravimetric data show that the etching rate of GaAs in neutralized (NH4)2S solution is about 15% lower than that in the conventional (NH4)2S solution- From SEM observation, only fewer number of etching pits with smaller size on the neutralized (NH4)2S treated GaAs surfaces can be found-
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.47.68
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 1998
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  • 10
    Online Resource
    Online Resource
    Chaotic synchronization control of Chua’s circuit by injected feedback based on the symbolic function
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2014
    In:  Acta Physica Sinica Vol. 63, No. 1 ( 2014), p. 010507-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 63, No. 1 ( 2014), p. 010507-
    Abstract: Due to the inherent property of the Chua’s circuit, it is difficult to obtain the three state variables directly from the circuit, and the general control method is hard to apply to the circuit. For these chaotic circuits which have energy storage elements, a simple circuit is designed to get the state variables. In addition, an injected feedback method to realize the synchronization is proposed, which can control the circuits with unknown differential variables of the state variables. Two chaotic systems which have different motions are investigated using the symbolic function. All results obtained from the circuits are verified by the effectiveness and feasibility of the above method.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.63.010507
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2014
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