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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (26)
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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (26)
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  • 1
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 63, No. 11 ( 2014), p. 118103-
    Kurzfassung: This paper focuses on the influence and mechanism of H2 in the eptaxial growth of ZnO using metal-organic chemical vapor deposition method. Studies show that hydrogen has a significant influence on the structure and properties of ZnO films. Hydrogen produces a mainly negative impact on crystal quality, surface structure, and optical properties of ZnO films when tert-butanol (t-BuOH) is used as the O sources. Raman scattering shows that hydrogen has a very good effect on the suppression of carbon contamination. When nitrous oxide is used as the O sources, the surface of ZnO films becomes smooth, and the crystal quality and optical property are improved. It is shown that hydrogen can play a positive role when N2O is used as O source. In this paper we highly estimate hydrogen's ability of reducing the surface growth energy, improving the migration of the surface atoms and the corrosion effect on the surface. Studies show that the optimization of hydrogen has a significant effect during the epitaxial growth of ZnO using the MOCVD method.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2014
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 71, No. 5 ( 2022), p. 057301-
    Kurzfassung: Quasi-vertical GaN barrier Schottky diodes have attracted much attention due to their low cost and high current transfer capability. The main problem is that the reverse characteristics of the devices may not be well estimated, which affects the design of the diodes. In this paper, the defects of GaN materials and the leakage related tunneling mechanisms accompanied with other mechanisms are considered. Based on the established composite device models, the reverse leakage current is simulated which is well consistent with the recent experimental result. With the assistance of the proposed models, several field plate structures are discussed and simulated to obtain a quasi-vertical GaN barrier Schottky diode with high breakdown voltage. The major leakage mechanisms are also analyzed according to the relation among leakage current, temperature and electric field at various reverse voltages. High BFOM up to 73.81 MW/cm〈sup〉2〈/sup〉 is achieved by adopting the proposed stepped field plate structure.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2022
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 3
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2005
    In:  Acta Physica Sinica Vol. 54, No. 8 ( 2005), p. 3774-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 54, No. 8 ( 2005), p. 3774-
    Kurzfassung: To reveal the interfacial phase structure and its effect on mechanical propertie s of Ti_Si_N composite films, x_ray diffractometry, high_resolution transmission electron microscopy, Auger electron spectroscopy, and microhardness tester were employed to investigate theinterfacial phase structure and mechanical pro perties of magnetron sputtered Ti_Si_N composite films. A series of TiN/Si3 N4 multilayered films in nanometer scale were also prepared and characte rized for comparison. The results indicated that Ti_Si_N composite films formed a structure of nanocrystalline TiN surrounded by Si3N4 int erfacial p hase. In the Ti_Si_N composite film with lower silicon content, the Si3 N4 interfacial phase with a thickness of less than 1 nm crystal lized and formed a coherent interface with TiN nanocrystals, leading to an enhancement in the hardness of the film. Whereas, in the composite film of larger silicon cont ent, Si3N4 phase existed as amorphous and resulted in a de crease in hardness. Our research indicated that the crystallization of Si3N4 i nterfacial phase was essential to obtain a high hardness in the Ti_Si_N composit e films, and the strengthening mechanism of the composite films appeared to be the same as TiN/Si3N4 multilayered films.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2005
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 4
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 64, No. 17 ( 2015), p. 177802-
    Kurzfassung: The photoluminescence properties of InGaAsP films with a bandgap energy of 1.05 eV for quadruple-junction solar cells grown by molecular beam epitaxy (MBE) are investigated. We make the excitation intensity and temperature dependence of continuous-wave photoluminescence (cw-PL) measurements. The PL peak position is 1.1 eV at 10 K, and almost independent of the excitation power, but the integrated intensity of the PL emission peaks is roughly proportional to the excitation power. The shift of peak position with temperature follows the band gap shrinking predicted by the well-known Varshni's empirical formula. These results indicate that the intrinsic transition dominates the light emission of the InGaAsP material. In addition, we also make the time-resolved photoluminescence (TRPL) measurements to determine the carrier luminescence relaxation time in InGaAsP. PL spectra suggest that the relaxation time is 10.4 ns at room temperature and increases with increasing excitation power, which demonstrates the high quality of the InGaAsP material. However, the relaxation time shows an S-shape variation with increasing temperature: it increases at temperatures lower than 50 K, and then decreases between 50–150 K, and increases again when temperature is over 150 K. According to the effect of temperature and the non-radiative recombination center concentration on the carrier relaxation time, the recombination mechanism of S-shape variation can be explained by the carrier relaxation dynamics.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2015
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  • 5
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1996
    In:  Acta Physica Sinica Vol. 45, No. 2 ( 1996), p. 297-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 45, No. 2 ( 1996), p. 297-
    Kurzfassung: The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3), SiH(SiO2) and SiH(O2) structure.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 1996
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 6
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1987
    In:  Acta Physica Sinica Vol. 36, No. 6 ( 1987), p. 736-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 36, No. 6 ( 1987), p. 736-
    Kurzfassung: By using the irreducible representation basis functions of the point group whose symmetry is lower than Td, a decomposition of the total density of states is considered. The calculation-results are obtained for the D3d point group in Si. Combining with the Koster-Slater Green's function method and on site approximation, the calculation results are used to analyse the electronic structures of the divacancy and the chalcogenide paris (S20, Se20, Te20) in Si. Some interesting results are obtained as follows; The distribution of the local spectral densities closely related to the deep states in forbidden band is similar for point and pair defects. Under the expellant action caused by the local spectral density, the symmetrical A10s (chalcogenide pairs) and Eg, (divacancy) states are higher than the antisymmetrical A2us (chalcogenide pairs) and Eu, (divacancy) states. The distribution of the deep state wavefuctions in Bloch space is also, similar for point and pair defects.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 1987
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1999
    In:  Acta Physica Sinica Vol. 48, No. 13 ( 1999), p. 263-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 48, No. 13 ( 1999), p. 263-
    Kurzfassung: A series of bulk (La1-xPrx)2/3Sr1/3MnO3 polycrystaline samples were prepared by sol-gel technique and the electrical, magnetic properties and magnetostriction effect were studied. At low temperatures, the magnetostriction was mainly about linear magnetostriction and saturated at low magnetic field, and the saturation field decreased with decreasing Pr content. At x=0.3, we found maximum value of -90×10-6.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 1999
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 8
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1999
    In:  Acta Physica Sinica Vol. 48, No. 13 ( 1999), p. 268-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 48, No. 13 ( 1999), p. 268-
    Kurzfassung: A series of polycrystaline bulk (La1-xRx)2/3Sr1/3MnO3(R=Sm,Tb) over a wide composition range were prepared by two different techniques, and their structure nd magnetostriction effect were studied carefully at room temperature. The X-ray diffraction pattern indicated that the structure of samples transformed from rhombohedral type to orthorhombic phase with decreasing R contents. The sample, composition near the transformation point, had the maximum value of magnetostriction. The magnetostriction may come from the exchange magnetostriction in the samples at room temperature.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 1999
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 9
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 1986
    In:  Acta Physica Sinica Vol. 35, No. 12 ( 1986), p. 1582-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 35, No. 12 ( 1986), p. 1582-
    Kurzfassung: The electronic structures of the ground states of S0 Se0 and Te0 pairs in Si are invesgated using the Green's function method with a tight binding Hamiltonian. Three different opinions are discussed. (S0)2, (Se0)2 or (Te0)2 in Si will introduce a symmetrical A1g state and an anti-symmetrical A2u state in the gap, both are fully occupied, the observed state is the shallower A1g state. The theoretical reason why the symmetrical A1g, state is higher than the antisymmetrical A2u state is analysed. The measured g factor of (Se2)+ in Si and the experimental data of ESR spectra for (S2)+ and (Se2)+ in Si also support the conclusions of the present paper.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 1986
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 10
    Online-Ressource
    Online-Ressource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2021
    In:  Acta Physica Sinica Vol. 70, No. 8 ( 2021), p. 082901-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 70, No. 8 ( 2021), p. 082901-
    Kurzfassung: At present, there exist few proton-beam terminals for the detector calibration in the world. Meanwhile, most of these terminals provide monoenergetic protons. Back-n white neutron source from China Spallation Neutron Source(CSNS) was put into operation in 2018. Based on the white neutron flux ranging from 0.5 eV to 200 MeV from the CSNS Back-n white neutron source, continuous-energy protons involved in a wide energy spectrum can be acquired from the 〈sup〉1〈/sup〉H(n, el) reaction. Adopting this method, a new research platform for researches such as proton calibration is realized at CSNS. As hydrogen exists as gas at normal temperature and pressure, in the selecting of the proton-converting target, the hydrogen-rich compounds are preferential considered. Considering the reaction cross sections of the 〈sup〉1〈/sup〉H(n, el), 〈sup〉12〈/sup〉C(n, p)〈sup〉12〈/sup〉B, 〈sup〉12〈/sup〉C(n, d)〈sup〉11〈/sup〉B, 〈sup〉12〈/sup〉C(n, t)〈sup〉10〈/sup〉B, 〈sup〉12〈/sup〉C(n, 〈sup〉3〈/sup〉He)〈sup〉10〈/sup〉Be, 〈sup〉12〈/sup〉C(n, α)〈sup〉9〈/sup〉Be and 〈sup〉1〈/sup〉H(n, γ)〈sup〉2〈/sup〉H, polyethylene and polypropylene are suitable for serving as targets in this research. Based on a 3U PXIe, digitizers with 1 GSps sampling rate and 12 bit resolution are utilized to digitize and record the output signals of telescopes. The time and amplitude information of each signal are extracted from its recorded waveform. Proton fluxes can be calculated by using the neutron energy spectrum and the cross section of the 〈sup〉1〈/sup〉H(n, el) reaction. Using the γ-flash event as the starting time of the time-of-flight (TOF) and the time information of signal in detector as the stopping time, the kinematic energy of each secondary proton can be deduced from the TOF and the angle of the detector. A calibration experiment on three charged particle telescopes, with each telescope consisting of a silicon detector and a CsI(Tl) detector, is carried out on this research platform. The readout methods of the CsI(Tl) detectors in these three telescopes are different. In the calibration experiment, Δ〈i〉E-〈/i〉〈i〉E〈/i〉 two-dimensional spectra and amplitude-〈i〉E〈/i〉〈sub〉p〈/sub〉 two-dimensional spectra of these telescopes are obtained. Through comparing these particle identification spectra, the SiPM is chosen as the signal readout method for CsI(Tl) detectors in the charged particle telescopes. These researches provide experimental evidence for the construction of the charged particle telescope at Back-n, and also illustrate the feasibility of wide-energy spectrum proton calibration based on the Back-n white neutron source.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2021
    Standort Signatur Einschränkungen Verfügbarkeit
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