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  • 1
    Online Resource
    Online Resource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2020
    In:  Acta Physica Sinica Vol. 69, No. 16 ( 2020), p. 160301-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 69, No. 16 ( 2020), p. 160301-
    Abstract: Information security is the cornerstone and lifeblood of national security in the information society, and anonymous quantum communication is one of the important ways to protect information security. Using quantum walk randomness to effectively solve sensitive problems such as leakage of identity information. In this paper, an anonymous communication scheme based on quantum walks on the Cayley graph is proposed. First, both parties in the communication hide their identity information, and the sender Alice anonymously selects the receiver Bob through logic or operation. Secondly, the trusted third party and the communicating parties use the BB84 protocol to generate and distribute the security key. Alice encrypts the information sequence according to the security key to obtain the blind information; Bob uses the joint Bell state measurement and security key to sign and the trusted third party verifies the signature information. Third, the trusted third party calculates the position probability distribution function of Bob’s quantum walk via the Fourier transform, converts the position information corresponding to the maximum probability into a confirmation frame and sends it to Alice; Alice uses the quantum compression algorithm by decreasing dimensions to reduce the number of transmitted information bits(the length of the information bit can be reduced by up to 37.5%) and uses the security key to complete the information encryption and then transmit the information to the location indicated by the confirmation frame. Bob uses quantum walks to search the location node to obtain the transmission information and complete the anonymous quantum communication. Finally, the security analysis of the scheme is carried out, and the numerical simulation results of the Cayley graph of 200 nodes are given. At the 10-step walk, the maximal probability of the 6th node is 45.31%. According to the simulation results, the probability that Bob is eavesdropped on the specific location at his 10-step walk during the communication of this scheme is approximately 6 × 10〈sup〉–7〈/sup〉%, so the receiver can avoid the identity information from the eavesdropping with a high probability, and the quantum network anonymity protocol is not broken.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2020
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  • 2
    Online Resource
    Online Resource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 10 ( 2012), p. 107302-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 10 ( 2012), p. 107302-
    Abstract: A transport model of CNTFET is built by solving the Poisson equation and Schrödinger equation within the non-equilibrium Green's function theory. The simulation method can relate the CNTFET transport properties directly with the chiral index of CNT. For the first time, the influences of single HALO and double LDD (HLL) doping structures on the CNTFET are investigated. The results show that under the same gate-source and drain-source voltages, HLL-CNTFET reduces significantly the leakage current and the subthreshold swing and increases on-off current ratio as compared with conventional CNTFET, indicating that this new structure has better gate control ability than conventional CNTFET. HLL-CNTFET possesses a smaller drain-source conductance so that it is more suitable for analog integrated circuits application, and has a smaller threshold voltage shift so shat it can better suppress DIBL effect. The increase of channel electric field strength near the source is beneficial to the increase of the electron transport rate; and the reduction in electric field near the drain is more conductive to the suppression of hot electron effects. This study is helpful for understanding the working mechanism and exploring new features of CNTFET.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2012
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  • 3
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 57, No. 1 ( 2008), p. 371-
    Abstract: Scanning near-field microscopy (SNOM) was used to investigate the low-dimensional semiconductor fluorescence divices, which can work as micro-nano-light source, nano-optical waveguide and light enhancement component in nano-integrated optical circuit. It was found that the quality of semiconductor wire end emission was mainly determined by the sample radius. By designing the wire radius and topography reasonably, it can be used as the light source and optical waveguide in nano-integrated optical circuit. ZnO tetrapod, comb, and CdS multi-branch nano-ribbon also presented quite good adequacy for optical waveguide application, which can function well in light division, congregation, coupling and filtering. 2-D photonic crystal can enhance the light intensity of GaN based LED by as large as 5.2 times. About 30% fluorescence is confined to the surface of photonic crystal. This conclusion is helpful for the optimization of LED light emission. When the resonance excitation condition is fulfilled, Surface plasmm polaritons (SPP) will be excited at the interface between the semiconductor and the silver thin film, which will bring about strong enhancement of electromagnetic field at the interface. Photonic crystal and SPP can realize light enhancement under low_dimensional and nano-scale conditions. The experimental results show that both of them have the potential application as enhancement components in nano-integrated optical circuit.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2008
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  • 4
    Online Resource
    Online Resource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2004
    In:  Acta Physica Sinica Vol. 53, No. 11 ( 2004), p. 3756-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 53, No. 11 ( 2004), p. 3756-
    Abstract: The properties and applications of the photorefractive two-wave coupling in con gruent SBN:Cr(Sr0.61Ba0.39Nb2O.6:Cr)crystal under external dc e lectric field are experimentally investigated in this paper.The variation of the intensity gain coefficient of the two-wave coupling with the external field is analyzed,and the measurement results are presented.It is found that the photore fractive two-wave coupling gain and response rapidity can be both increased,by applying appropriate external electric field to the crystal.Further study indica tes this electric response property of SBN:Cr crystal is useful to some applicat ions,such as improving the image edge-enhancement and the image edge-enhanceme nt joint-transform correlator based on the nonlinear energy transfer of photore fractive two-wave coupling in the crystal.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2004
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  • 5
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 6 ( 2013), p. 068501-
    Abstract: A two-dimensional electrothermal model of the bipolar transistor (BJT) is established, and the transient behaviors of the BJT originally in the forward-active region are simulated with the injection of electromagnetic pulse from the base. The results show that the damage location of the BJT shifts with the amplitude of the pulse. With a low pulse amplitude, the burnout of the BJT is caused by the avalanche breakdown of the emitter-base junction, and the damage location lies in the cylindrical region of this junction. With a high pulse amplitude, the damage first occurs at the edge of the base closer to the emitter due to the second breakdown of the p-n-n+ structure composed of the base, the epitaxial layer and the substrate. The burnout time increases with pulse amplitude increasing, while the damage energy changes in a decrease-increase-decrease order with it, thus generating both a minimum value and a maximum value of the damage energy. A comparison between simulation results and experimental ones shows that the transistor model presented in the paper can not only predict the damage location in the BJT under intense electromagnetic pulses, but also obtain the damage energy.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2013
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  • 6
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 59, No. 11 ( 2010), p. 8118-
    Abstract: A study of the internal damage process and mechanism of the typical n+-p-n-n+ structure bipolar transistor induced by the intense electromagnetic pulse (EMP) is carried out in this paper from the variation analysis of the distribution of the electric field,the current density and the temperature. Research shows that the damage position of the bipolar transistor is different with the different magnitude of the injecting voltage,when the magnitude of the injecting voltage is low the damage will appear firstly near the collector region under the center of the emitter region,and when the magnitude of the injecting voltage is sufficiently high the damage will appear firstly at the edge of the base near the emitter due to the breakdown of the PIN structure composed of the base-epitaxial layer-collector. Adopting the data analysis software,the relation equation between the device damage power P and the pulse width T under different injecting voltage is obtained. Owing to the variety of the device damage energy,it is demonstrated that the empirical formulas of the intense electromagnetic pulse P=AT-1 (A is a constant) is modified to P=AT-1.4 for the bipolar transistor.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2010
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  • 7
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 12 ( 2013), p. 128501-
    Abstract: By analyzing the variations of the internal distributions of the temperature with time and the current density and the burnout time with the signal amplitude, we study the internal damage process and mechanism of the typical silicon-based n+-p-n-n+ structure bipolar transistor induced by three kinds of high power microwaves such as triangular wave, sinusoidal wave and square wave. The results show that the base-emitter junction is the damage position and the device is more susceptible to damage under the injection of the square waves. The displacement current and the burnout time increase but the proportion of the displacement current in the total current decreases with signal amplitude increasing. The injected power plays a determinative role in the damage process compared with the displacement current. Adopting the data analysis software, the relation equation between the burnout time t and the signal frequency f is obtained. It is demonstrated that the burnout time increases with signal frequency increasing, and the equations of the three kinds of high power microwaves all agree with the formula t= afb.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2013
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  • 8
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 2 ( 2012), p. 024201-
    Abstract: The near-field diffraction characteristics when a high-power laser beam traverses contaminant particles are studied by using the designing software of high-power laser drivers-Laser designer. The modulations generated by contaminant particles are sorted. Then the influence of contaminant particles with amplitude or phase modulation on the near-field intensity distribution in vacuum or in fused silica is analyzed in great detail. The results show that in both vacuum and fused silica, the phase modulated contaminant particles have a greater influence on the near-field properties of high-power laser. Moreover, it is found that in fused silica, the small-scale self-focusing hot-image modulation of high-power laser induced by phase modulated hard-edge contaminant particles is momentous. But the lateral shift of high-power laser beam caused by contaminant particles maybe inhibits the small-scale self-focusing effect to some extent, thereby reducing the laser injury risk of optical component.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2012
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  • 9
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 3 ( 2012), p. 038701-
    Abstract: The experimential evidences confirm that spiral waves are observed in the disinhibited mammalian neocortex. The scheme of ceullar networks is used to simulate the formation and the evolution of spiral wave in the neocortical slices. The regular networks of neurons are constructed in the two-dimensional space, the dynamical properties of thermosensitive neurons is described by temperature factor, and the effect of membrane temperature on the evolution of spiral wave is investigated in detail. A statistical factor of synchronization is defined to measure the critical condition inducing phase transition of spiral wave (death or breakup) by the factor of temperature of membrane. It is confirmed that spiral wave is removed and the whole networks become homogeneous and synchronous completely when the membrane temperature exceeds a certain threshold; the breakup of spiral wave is induced in the presence of weak channel noise being considered. Furthermore, it is suggested that the mechanism of temporary heat stupor could be the blocking of spiral wave propagation in some functional domain.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2012
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  • 10
    Online Resource
    Online Resource
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 7 ( 2012), p. 078501-
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 7 ( 2012), p. 078501-
    Abstract: Combining self-heating effect, mobility degradation in high electric field and avalanche generation effect, a two-dimensional electro-thermal model of the typical silicon-based n+-p-n-n+ structure bipolar transistor induced by high power microwave is established in this paper. By analyzing the variations of device internal distributions of the electric field, the current density and the temperature with time, a detailed investigation of the damage effect and the mechanism of the bipolar transistor under the injection of 1GHz equivalent voltage signals from the base and collector is performed. The results show that temperature elevation occurs in the negative half-period and the maximum temperature falls slightly in the positive half-period when the signals are injected from the collector. Compared with the former, device damage occurs easily with the signals injected from the base. Specifically, the base-emitter junction is susceptible to damage. The damage results caused by two large-amplitude signals with initial phases of 0 and respectively indicate that the injected signal with an initial phase of is liable to cause device damage. Meanwhile, the emitter series resistance can enhance the capability of the device to withstand microwave damage effectively.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2012
    Location Call Number Limitation Availability
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