In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 56, No. 4 ( 2007), p. 2422-
Abstract:
The microcrystalline silicon films at different growth stages were deposited by plasma-enhanced chemical vapor deposition (PECVD). The reflectivity of grazing incidence X-ray from synchrotron radiation has been applied to investigate the evolution of surface roughness of these thin films. By study of surface morphology of microcrystalline silicon (μc-Si:H), we understand their growth kinetics and growth mechanism. The results show that the growth exponent β is 0.21±0.01 and 0.24±0.01 for μc-Si:H films deposited on glass substrate at fixed substrate temperature, Under the following condition of electrode distance, pressure, rf power density, H2 dilutied at 200 ℃ to be 2 cm, 6.66×102 Pa and 0.22 W/cm2, 99% and 98%, respectively. According to the KPZ model in the PECVD case the growth mechanism of the μc-Si:H films is a finite diffusion growth.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2007
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