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  • 1
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 64, No. 15 ( 2015), p. 154207-
    Abstract: Electric field distribution, in the wavelength range 1053 nm and 0° high reflection coatings, with different truncated conical pits has been estimated by using the finite difference time domain method (FDTD). Results of simulations indicate that the smaller the angle between the pit’s edge and the normal line, the higher the damage threshold of the mitigation pit. In the experimental process, the dimension of this angle mainly depends on two factors, i.e. the influencing area of the focal spot and the depth of mitigation pits. Because the ratio between them is the angle’s tangent, decreasing the influencing area of the focal spot and increasing the depth of the machined area could yield a mitigation pit with a smaller angle. By optimizing the focal spot size, pulse energy, step size and the number of machining passes of femtosecond laser micromachining, a pit with an angle of 25° and a depth of 14 μm is obtained. The typical damage threshold of the mitigation pit is about 21 J/cm2, which is 2.3 times greater than the fluence-limited defect. Moreover, the laser damage testing results of 50 mitigation pits show that the mitigation process has a good repeatability. The correlation between the cone angle and the damage threshold is also examined, the simulations are in agreement with the experimental results. The ratio of the maximum intensification between 45° and 25° cone angles is ~2.5 and that of the damage threshold between the two angles is ~0.5. At the same time, the relationship between the micromachining pulse width and the damage threshold is also estimated: if other process parameters are kept constant, a longer pulse length tends to produce lower laser-resistant mitigation pits. Compared to the result of 260 fs laser pulse, the truncated conical pit created by 6 ps laser pulse has a smaller depth, which implies that more thermal effect occurs during the miromachining process. However, cracks are not found around the pit. Thus, thermal damage is not the major reason for the decrease of damage threshold. Meanwhile, smaller depth also indicates that the pit has a large cone angle. According to the result of former FDTD simulation, the decrease of damage threshold is mainly caused by electric field enhancement in a pit with a large cone angle.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2015
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  • 2
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 58, No. 6 ( 2009), p. 4243-
    Abstract: The crystallization evolution of the nanostructured Si (ns-Si) in the Er-doped Si/Al2O3 multilayer fabricated by using pulsed laser deposition technique and its effects on the Er3+ luminescence at 1.54 μm are investigated. Raman scattering and transmission electron microscopy measurements are used to characterize the microstructure evolution of the ns-Si during annealing treatment processes. The maximum photoluminescence intensity is obtained in the sample with ultrathin ns-Si sublayers annealed at 600—700 ℃, where the density, the size of Si nanocrystals, the interaction distance, and the optimized local environment for effectively activating the Er3+ are well controlled. From the analysis of the decay process of time-dependent luminescence, two decay channels are considered, the fast and slow decay channels. The bulk-like Si is responsible for the fast process and the Si nanocrystals are responsible for the slow decay process.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2009
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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