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  • 1
    Online-Ressource
    Online-Ressource
    Material opto-electronic properties of In, N co-doped SnO2 studied by first principles
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 6 ( 2011), p. 063103-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 6 ( 2011), p. 063103-
    Kurzfassung: In this paper we use first-principles full potential linearized augmented plane wave method (FP-LAPW) to inwestigate density of states (DOS), band structure and optical properties of the materials that doped with In and N. The results show that the doping structure has fine locat levels in both the spin-down direction and the spin-up direction and both state densities are symmetrical. The local levels are produced in the spin-down direction in the band gap, and co-doped compounds show being semi-metallic. The energy band structure indicates that the two co-doped compounds are still direct band gap semiconductors. The top of valence band shifts toward the low energy with the increase of the concentration of N, so obviously the band gap is widened. The main dielectric peak of imaginary part of dielectric function exists only at 8.58 eV, the position of main peak shifts to ward the right and the peak intensity increases significantly. The static dielectric constants of two different concentrations of N-doped structure also significantly increase, and a strong interaction takes place between the states of N 2p and In 5s. The number of peaks of co-doped absorption spectra reduces and the range of absorption wavelength is broadened.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.063103
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2011
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  • 2
    Online-Ressource
    Online-Ressource
    Output characteristics of wavelength tunable fiber lasers based on sampled Bragg gratings
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 2 ( 2011), p. 024207-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 2 ( 2011), p. 024207-
    Kurzfassung: A simulation model of the fiber DBR (distributed Bragg reflector) laser with two sampled Bragg gratings (SBGs) as reflectors is established, with which the characteristics of the laser are analyzed in detail. The analysis mainly focuses on the change of the laser output characteristics with the wavelength and reflectivity of the front and back sampled fiber gratings. Because of the multi-channel reflection of SBGs, the side mode of such laser is always very obvious. The method for improving the SMSR(side mode suppression ratio) is suggested. And the wavelength tuning mechanism is also studied. Experiment has been carried out to confirm the analysis.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.024207
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2011
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  • 3
    Online-Ressource
    Online-Ressource
    Study of material properties of Fe, S Co-doped SnO2 by first principles
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 2 ( 2012), p. 023101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 2 ( 2012), p. 023101-
    Kurzfassung: Tin oxide has become one of hot points in transparent conductive materials due to its excellent electrical and optical properties. Based on the full-potential linearized augmented plane wave method (FP-LAPW), we investigate the electronic structure and the optical properties of the material Fe-S co-doped SnO2. The results show that the two co-doped compounds are all direct transition semiconductors with half-metallic properties. Fe-S co-doping can narrow the band gap, and the density of states (DOS) shifts toward the low energy with the increase of S concentration. The charge density of co-doped system is redistributed, and the degree of Fe polarization and the capacity of bonding are enhancd with the increase of S. What is more, the peaks of imaginary part of dielectric function and optical absorption are red shifted, and the absorption edge decreases with the increase of S concentration.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.61.023101
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2012
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  • 4
    Online-Ressource
    Online-Ressource
    First-principle study on optoelectronic and magnetic properties of Sn(O1-xNx)2
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 11 ( 2012), p. 117101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 11 ( 2012), p. 117101-
    Kurzfassung: Optoelectronic and magnetic properties for Sn(O1-xNx)2 material were examined using quantum chemical ab initio calculation software WIEN2K based on the first principles of density functional theory. The density of states, the band structure, the magnetism, dielectric function and the refractive index are analyzed. The results show that the band gap frist narrowed and then increases with the increase of doping concentration of nitrogen substituting oxygen, the band gap of Sn(O1-xNx)2 becomes the narrowest when the concentration of nitrogen is 12.50%. As a result of the contribution of the electron of N 2p orbit, a low acceptor level appears in a range of 0.551.05 eV, and the level spliting and the orbit overlap appear in the valence band and conduction band. The SnO bond is stronger than the NO bond. From the magnetism, the magnetic moment is determined by N atoms. We know that the optical absorption edge is widened from the imaginary part of dielectric function. The main transition peak is red shifted and the refractive index is corresponding to the dielectric function related to the transition of electrons.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.61.117101
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2012
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  • 5
    Online-Ressource
    Online-Ressource
    First-principles calculation on electronic structure and optical properties of iron-doped SnO2
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 11 ( 2011), p. 113101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 11 ( 2011), p. 113101-
    Kurzfassung: By the full-potential linearized augmented plane wave method (FP-LAPW), we investigate the electronic structures and optical properties of Fe-doped SnO2 system, including the density of states (DOS), band structure, dielectric function and other optical spectra. The calculation indicates that the Fe doped materials are all direct transition semiconductors with half-metallic property. With the increase of Fe-doping concentration, the Fermi level goes into valence band gradually, and the band gap reduces with the coupling of Fe atoms increasing. Moreover, impurity can change the property of the bond formation to some extent, and make it have metallic bond characteristic. Furthermore, we find that the optical spectrum (such as absorption spectrum), extinction coefficient, etc are blue shifted, corresponding to the imaginary part of dielectric function. The peaks are related to the transition of electrons, which indicates internal relationship between the electronic structures and optical properties theoretically.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.113101
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2011
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  • 6
    Online-Ressource
    Online-Ressource
    Electronic structure and optical properties of Cr doped SnO2 superlattice
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2011
    In:  Acta Physica Sinica Vol. 60, No. 9 ( 2011), p. 093101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 9 ( 2011), p. 093101-
    Kurzfassung: By the full-potential linearized augmented plane-wave method (FP-LAPW), we investigate the electronic structure, the band structure, the dielectric function, the absorption spectrum, the reflectivity and the refraction of Cr doped SnO2 superlattice. The generalized gradient approximation (GGA) is used for handling correlation energy. Calculation results show that due to the Cr doping, SnO2 superlattice forms new electron occupied state near Fermi energy level and uncentinuous impurity band comes into being, which is contributed by Cr-3d and O-2p, Sn-5s. In dielectric spectrum appear three new dielectric peaks between 0 eV to 5.5 eV. In high-energy area, the position of main peak has a blue-shift and the peak intensity reduces. Absorption spectrum, reflectivity spectrum and refraction spectrum also have peaks corresponding to the dielectric peaks, which are caused by d—d transition of Cr atom.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.60.093101
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2011
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 7
    Online-Ressource
    Online-Ressource
    Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2008
    In:  Acta Physica Sinica Vol. 57, No. 4 ( 2008), p. 2174-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 57, No. 4 ( 2008), p. 2174-
    Kurzfassung: The structure of surface layer of monocrystalline Si by implanting nitrogen cluster ions N+10 was transformed directly the nanocrystalline, which led to the change in optical properties of monocrystalline Si. Excited by the ultraviolet light of 250—320nm, the sample showed a clear luminescence band of 330—500nm and an extra intensive spectral peak with good monochromaticity around 360nm. The intensity of the peak were 5 times high as the intensity of the substrate or N+ implantation samples and 1.5 times high at the N+2 implantation samples, respectively. It was also found there were two other stable luminescence bands around 730nm in the visible region and around 830nm in the infrared region, respectively. The preliminary study indicated that an excellent photoluminescence material was formed in the implanted layer.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.57.2174
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2008
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  • 8
    Online-Ressource
    Online-Ressource
    Study of the optical properties of superlattices ZnO doped with indium
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2012
    In:  Acta Physica Sinica Vol. 61, No. 5 ( 2012), p. 057101-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 5 ( 2012), p. 057101-
    Kurzfassung: According to the full-potential linearized augmented plane wave method, we calculate the optical properties of In-doped superlattices ZnO. The results reveal that the Fermi energy level enters into the conduction band after doping In. Dielectric function, absorption, refractive index, reflectivity are found to each have a new transition peak near the Fermi energy level. With the increase of the concentration, this transition peak shifts toward the low energy and the spectrum of the peak is the biggest for the two-layer doping case. The optical absorption edge decreases with the increase of doping concentration. Compared with In-doped ZnO supercell, ZnO superlattice has a high transmissivity in the visible light range.
    Materialart: Online-Ressource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.61.057101
    Sprache: Unbekannt
    Verlag: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publikationsdatum: 2012
    Standort Signatur Einschränkungen Verfügbarkeit
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