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  • AIP Publishing  (3)
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  • AIP Publishing  (3)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 19 ( 2021-11-08)
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 19 ( 2021-11-08)
    Abstract: Nanographene exhibits manifold magnetic orders depending on its topology. The Clar's goblet, envisioned 50 years ago and synthesized recently, is an emblematic nanographene with an antiferromagnetic ground state induced by topological frustration. Inspired by the significant interest in the designer magnetic order of nanographene, we studied the tunable magnetic order in heteroatom-doped Clar's goblet. Interestingly, the antiferromagnetic to ferromagnetic transition is found in doped Clar's goblet by varying the doping positions. A large exchange-coupling strength of 77 meV is realized in a Clar's goblet doped by two nitrogen atoms. The spin directions and distribution at the connecting atoms determine the magnetic order and exchange-coupling strength. Moreover, the spin logic gate based on Clar's goblet can be converted from XOR (XAND) gate into OR (AND) gate by doping the outer units with nitrogen atoms. The heteroatom-doped nanographene with tunable magnetic order provides a platform for spintronic devices with controllable functions.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    In: Journal of Applied Physics, AIP Publishing, Vol. 131, No. 20 ( 2022-05-28)
    Abstract: Microalloying by introducing small atoms into the interstitial sites of crystal represents an important strategy in composition design, usually enabling a leap in material performance under a tiny doping concentration. However, for the Ni–Mn-based magnetic shape memory alloys, plenty of critical scientific issues related to interstitial alloying remains ambiguous. In this work, by first-principles calculations, the occupation preferences, and the impacts and the underlying mechanisms of H, C, N, and O on magnetism, phase stability, and electronic structures of Ni2MnGa, were systemically investigated. By using a two-stage relaxation strategy, it is confirmed that all the studied interstitial atoms prefer to occupy the octahedral interstice, although the undistorted octahedral interstice possesses a smaller size than that of the tetragonal interstice. The magnetic moments of Ni and Mn around the interstitial element are highly modified, which is attributed to the decreased concentration of conduction electrons, resultant from the formation of covalent bonds between Ni and the interstitial atoms, and the revised distances between Mn–Ni(Mn) caused by the local lattice distortion. Interstitial alloying can highly tailor the phase stability and the c/a ratio of martensite. The doping of C has a great potential to destabilize the austenite owing to the reduced ferromagnetism, which is opposite to the case in steel. The atom radius of an interstitial atom may be the critical factor dominating the elastic stability of the alloyed systems. This work is expected to provide fundamental information for interstitial alloying to promote the design of advanced magnetic shape memory alloys.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 15 ( 2020-04-13)
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 15 ( 2020-04-13)
    Abstract: Constructing a van der Waals (vdW) heterostructure is a promising approach to tackle the bandgap hurdle of graphene meanwhile preserving its excellent electronic properties. The unique symmetry of atomic arrangement in C3B and C3N monolayers could induce interesting properties in the graphene/C3B (C3N) heterostructure. Based on the density functional theory calculation, we demonstrate that the bandgap near the Dirac cone depends sensitively on the stacking order in the graphene/C3B (C3N) vdW heterostructure. The bandgap is opened in the AB stacking order, but is completely closed in the AA stacking order. The bandgap closing is protected by the AA stacking order even under vertical strain, while the bandgap increases in the AB stacking order with a positive vertical strain. Based on the tight-binding model, the origin of the bandgap opening and closing is explained by the stacking-order dependent charge transfer. Moreover, the transport properties of the devices assembled by the graphene/C3B vdW heterostructures are investigated based on the non-equilibrium Green's function method plus the density functional theory. The conductance can be turned on or off depending on the stacking order. This finding is useful for the future design of on/off devices based on graphene/C3B (C3N) heterostructures.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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