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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2022
    In:  Applied Physics Reviews Vol. 9, No. 3 ( 2022-09-01)
    In: Applied Physics Reviews, AIP Publishing, Vol. 9, No. 3 ( 2022-09-01)
    Abstract: Optical tweezers employing forces produced by light underpin important manipulation tools employed in numerous areas of applied and biological physics. Conventional optical tweezers are widely based on refractive optics, and they require excessive auxiliary optical elements to reshape both amplitude and phase, as well as wavevector and angular momentum of light, and thus impose limitations on the overall cost and integration of optical systems. Metamaterials can provide both electric and optically induced magnetic responses in subwavelength optical structures, and they are highly beneficial to achieve unprecedented control of light required for many applications and can open new opportunities for optical manipulation. Here, we review the recent advances in the field of optical manipulation employing the physics and concepts of metamaterials and demonstrate that metamaterial structures could not only help to advance classical operations such as trapping, transporting, and sorting of particles, but they can uncover exotic optical forces such as pulling and lateral forces. In addition, apart from optical manipulation of particles (that can also be called “meta-tweezers”), metamaterials can be powered dynamically by light to realize ingenious “meta-robots.” This review culminates with an outlook discussing future novel opportunities in this recently emerged field ranging from enhanced particle manipulation to meta-robot actuation.
    Type of Medium: Online Resource
    ISSN: 1931-9401
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2265524-4
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  Physics of Fluids Vol. 33, No. 11 ( 2021-11-01)
    In: Physics of Fluids, AIP Publishing, Vol. 33, No. 11 ( 2021-11-01)
    Abstract: Under the influence of a strong adverse pressure gradient, secondary flow, and other factors, compressor cascades are prone to corner separation and even to corner stall, which seriously affects aerodynamic performance. In this paper, large eddy simulation is used to investigate the effects and mechanisms of corner stall controlled by the blended blade and end wall (BBEW) technique. Based on this technique, three BBEW control schemes with different chord-direction positions of the maximum BBEW width are designed for the suction side root of a modified NACA (National Advisory Committee for Aeronautics) 65 blade. The influence of the chord-direction position of the maximum BBEW width on control corner stall and the differences of physical mechanisms are deeply explored. The numerical results show that the BBEW technique can improve the flow field structure and aerodynamic performance of a compressor cascade under corner stall conditions to a certain extent. When the maximum BBEW width is located near the leading edge, it provides the most significant reduction in the spanwise height of corner separation and effectively weakens the intersection of boundary layers, so that the boundary layer losses are reduced by 6.27%, and the overall performance is improved. These effects can be attributed to the axial and spanwise forces generated near the maximum BBEW width, with the former increasing the kinetic energy of the surrounding fluid, while the latter transports low-energy fluid upward to reduce accumulation on the end wall. In addition, the increased dihedral angle weakens the intersection of boundary layers and restrains the development of the corner vortex, which is also one of the underlying physical mechanisms. When the maximum BBEW width is located in the middle of the chord, it most effectively delays the corner stall. When it is located near the trailing edge, it is most effective at controlling the development of corner separation, reducing the accumulation of low-energy fluid in the three-dimensional corner region, and reducing corner separation losses by 4.73%. The effect of the increased dihedral angle in weakening the intersection of boundary layers and the corner vortex is the main reason why these two design schemes can improve the aerodynamic performance of the compressor cascade.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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  • 3
    In: APL Materials, AIP Publishing, Vol. 7, No. 2 ( 2019-02-01)
    Abstract: Halide perovskites hold exceptional promise as cheap, low temperature solution-processed optoelectronic materials. Yet they are hindered by poor structural and chemical stability, rapidly degrading when exposed to moisture or air. We demonstrate a solution-phase method for infiltrating methylammonium lead bromide perovskite (CH3NH3PbBr3, or MAPbBr3) into nanoporous GaN which preserved the green photoluminescence of the perovskite after up to 1 year of storage under ambient conditions. Besides a protective effect, confinement within the porous GaN matrix also resulted in a blueshift of the perovskite emission with decreasing pore size, suggesting an additional templating effect of the pores on the size of the perovskite crystals within. We anticipate that our method may be generalised to related perovskite materials, offering a route to producing composites of interest for use in optoelectronic devices for various applications.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2722985-3
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  • 4
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 23 ( 2016-12-05)
    Abstract: We report on spatially resolved and time-resolved cathodoluminescence (CL) studies of the recombination mechanisms of InGaN/GaN quantum wells (QWs) grown by metal-organic vapour phase epitaxy on bulk m-plane Ammono GaN substrates. As a result of the 2° miscut of the GaN substrate, the sample surface exhibits step bunches, where semi-polar QWs with a higher indium concentration than the planar m-plane QWs form during the QW growth. Spatially resolved time-integrated CL maps under both continuous and pulsed excitation show a broad emission band originating from the m-plane QWs and a distinct low energy emission originating from the semi-polar QWs at the step bunches. High resolution time-resolved CL maps reveal that when the m-QWs are excited well away from the step bunches the emission from the m-plane QWs decays with a time constant of 350 ps, whereas the emission originating semi-polar QWs decays with a longer time constant of 489 ps. The time constant of the decay from the semi-polar QWs is longer due to the separation of the carrier wavefunctions caused by the electric field across the semi-polar QWs.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 5 ( 2017-07-31)
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 5 ( 2017-07-31)
    Abstract: We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based on 81 quantum dots. The degree of fine structure splitting stays relatively constant for temperatures less than 100 K and only increases above that temperature. At 200 K, we find that the fine structure splitting ranges between 2 and 12 meV, which is an order of magnitude higher than that at low temperatures. Our investigations also show that phonon interactions at high temperatures might have a correlation with the degree of exchange interactions. The large fine structure splitting at 200 K makes it easier to isolate the individual components of the polarized emission spectrally, increasing the effective degree of polarization for potential on-chip applications of polarized single-photon sources.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 26 ( 2014-06-30)
    Abstract: Experimental observation of Rabi rotations between an exciton excited state and the crystal ground state in a single non-polar InGaN quantum dot is presented. The exciton excited state energy is determined by photoluminescence excitation spectroscopy using two-photon excitation from a pulsed laser. The population of the exciton excited state is seen to undergo power dependent damped Rabi oscillations.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    In: Applied Physics Letters, AIP Publishing, Vol. 107, No. 8 ( 2015-08-24)
    Abstract: A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
    In: Journal of Applied Physics, AIP Publishing, Vol. 119, No. 17 ( 2016-05-07)
    Abstract: Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 9
    In: Journal of Applied Physics, AIP Publishing, Vol. 125, No. 22 ( 2019-06-14)
    Abstract: We investigate the atomic scale structure of m-plane InGaN quantum wells grown on bulk m-plane GaN templates and reveal that as the indium content increases there is an increased tendency for nonrandom clustering of indium atoms to occur. Based on the atom probe tomography data used to reveal this clustering, we develop a k · p model that takes these features into account and links the observed nanostructure to the optical properties of the quantum wells. The calculations show that electrons and holes tend to colocalize at indium clusters. The transition energies between the electron and hole states are strongly affected by the shape and size of the clusters. Hence, clustering contributes to the very large line widths observed in the experimental low temperature photoluminescence spectra. Also, the emission from m-plane InGaN quantum wells is strongly linearly polarized. Clustering does not alter the theoretically predicted polarization properties, even when the shape of the cluster is strongly asymmetric. Overall, however, we show that the presence of clustering does impact the optical properties, illustrating the importance of careful characterization of the nanoscale structure of m-plane InGaN quantum wells and that atom probe tomography is a useful and important tool to address this problem.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    In: Physics of Fluids, AIP Publishing, Vol. 34, No. 9 ( 2022-09-01)
    Abstract: In this work, we reported a kind of deflecting air cavity generation strategy by controlling the superhydrophobic (SHB) area occupancy and the impact angle of water entry. The influence of SHB area occupancy and the impact angle on the water entry dynamics and drag reduction characteristics of spheres are also explored through both experimental and theoretical analysis. For a hemispherically coated sphere, it is found that the formed air cavity would reach a maximum deflecting angle when the impact angle of water entry is 90°. With the increasing impact angle, the deflection displacement of the hemispherically coated sphere in the horizontal direction first increases and then decreases. When the impact angle is 90°, the deflection displacement reaches the maximum. The deflection displacement of the SHB region-modulated sphere in the horizontal direction has the same variation trend. Moreover, the SHB region-modulated sphere exhibits different air cavity morphologies (no cavity, transition state seal, deep seal, and surface seal) at different impact velocities for impact angles of 0° and 180°. The air cavity pinch-off depth and pinch-off time first increase and then stabilize as the SHB area occupancy increases, regardless of whether the impact angle is 0° or 180°, and the value of (Zpinch − Zp)/Zpinch is not affected by the SHB area occupancy (α ∼ 0°). Finally, we demonstrate that SHB region-modulated spheres all move faster than the original spheres, and the sphere with a SHB area occupancy of 0.25 (α ∼ 180°) is able to reduce the drag reduction coefficient to 0.055.
    Type of Medium: Online Resource
    ISSN: 1070-6631 , 1089-7666
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 1472743-2
    detail.hit.zdb_id: 241528-8
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