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  • AIP Publishing  (15)
  • 1
    Online Resource
    Online Resource
    Harnessing large deformation and instabilities of soft dielectrics: Theory, experiment, and application
    AIP Publishing ; 2014
    In:  Applied Physics Reviews Vol. 1, No. 2 ( 2014-06), p. 021304-
    Details
    In: Applied Physics Reviews, AIP Publishing, Vol. 1, No. 2 ( 2014-06), p. 021304-
    Type of Medium: Online Resource
    ISSN: 1931-9401
    URL: Article
    DOI: 10.1063/1.4871696
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 2265524-4
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  • 2
    Online Resource
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    On-demand hierarchical patterning with electric fields
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 104, No. 23 ( 2014-06-09)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 23 ( 2014-06-09)
    Abstract: We report a method to generate hierarchical topographical patterns on demand under the control of applied voltages. The method is implemented by harnessing the electro-creasing instability in multilayer elastomer films. The critical electric field for electro-creasing instability in a layer of elastomer scales with square root of the elastomer's modulus, while the wavelength of instability pattern scales with the layer's thickness. By rationally designing elastomer films with varied modulus and thickness throughout different layers, we control the formation of surface instability patterns with feature sizes of different scales under prescribed voltages. The method is very versatile, giving various types of hierarchical patterns such as randomly oriented, aligned, and gradient ones. A theoretical model is developed and validated to guide the design of hierarchical patterns.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4882416
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Diamond- c BN alloy: A universal cutting material
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 107, No. 10 ( 2015-09-07)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 107, No. 10 ( 2015-09-07)
    Abstract: Diamond and cubic boron nitride (cBN) as conventional superhard materials have found widespread industrial applications, but both have inherent limitations. Diamond is not suitable for high-speed cutting of ferrous materials due to its poor chemical inertness, while cBN is only about half as hard as diamond. Because of their affinity in structural lattices and covalent bonding character, diamond and cBN could form alloys that can potentially fill the performance gap. However, the idea has never been demonstrated because samples obtained in the previous studies were too small to be tested for their practical performance. Here, we report the synthesis and characterization of transparent bulk diamond-cBN alloy compacts whose diameters (3 mm) are sufficiently large for them to be processed into cutting tools. The testing results show that the diamond-cBN alloy has superior chemical inertness over polycrystalline diamond and higher hardness than single crystal cBN. High-speed cutting tests on hardened steel and granite suggest that diamond-cBN alloy is indeed a universal cutting material.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4929728
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
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  • 4
    Online Resource
    Online Resource
    Low defect density and small I−V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 118, No. 4 ( 2021-01-25)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 118, No. 4 ( 2021-01-25)
    Abstract: In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of the pn diode without annealing (PND) and with annealing (APND) are studied systematically. The APND device has a lower specific on-resistance of 4.1 mΩ cm2, compared to that of the PND, 5.4 mΩ cm2. Moreover, for the APND, a high breakdown voltage of 1630 V with lower leakage current is achieved, which is 730 V higher than that of the PND. The enhanced electrical performance of the APND leads to a record high power figure of merit of 0.65 GW/cm2 in Ga2O3-based pn diodes, which is among the best reported results in Ga2O3 power devices. In addition, the interface trap density of the diode decreases from 1.04 × 1012 to 1.33 × 1011 eV−1 cm−2 after annealing, contributing to much lower hysteresis. Simultaneously, the ideality factor n for the APND is steady at elevated temperatures due to the stable interface. The results of C−V characteristics reveal the bulk defects inside the nickel oxide film grown by sputtering, which are calculated by high- and low-frequency capacitance methods. X-ray photoelectron spectroscopy of NiO illustrates the reasons for the changes in the concentration of holes and defects in the film before and after annealing. This work paves the way for further improving the performance of Ga2O3 diode via interface engineering.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0038349
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
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  • 5
    Online Resource
    Online Resource
    Lock-in carrierography of semiconductors and optoelectronics
    AIP Publishing ; 2022
    In:  Journal of Applied Physics Vol. 131, No. 15 ( 2022-04-21)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 131, No. 15 ( 2022-04-21)
    Abstract: Lock-in carrierography (LIC), a recently emerging camera-based imaging technique, is proving to be very promising for noncontact and quantitative characterization of electrical/electronic properties of semiconductor and optoelectronic materials/devices at different stages of research, fabrication, and manufacturing. This tutorial is devoted to LIC and it contains four sections. First, the background of the terminology, the needs from the electronics industry, and the research progress of LIC are briefly introduced. Section II is regarding homodyne LIC, including the relevant basics (semiconductor and photoluminescence physics, digital lock-in imaging strategy, experimental configuration, etc.) and its applications to carrier effective lifetime imaging, resistivity imaging, and Si solar cell electrical characterization, while Sec. III is for heterodyne LIC, including the relevant basics (high-frequency carrier density waves, heterodyne photoluminescence signal generation mechanisms, nonlinear carrier recombination dynamics, etc.) and its applications to surface recombination velocity imaging, carrier trapping dynamic parameters imaging, and quantum-dot solar cell characterization. Comments and advice on the future study of LIC are given in the Outlook section.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/5.0088214
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    Sol-gel synthesis and photoluminescence of p-type semiconductor Cr2O3 nanowires
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 88, No. 24 ( 2006-06-12)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 88, No. 24 ( 2006-06-12)
    Abstract: Rhombohedral structure p-type semiconductor Cr2O3 nanowires were generated by sol-gel template technology with the diameters in the range of 100–300nm and the lengths ca. 10μm. A sharp ultraviolet photoluminescence band (full width at half maximum=13.8nm) at the wavelength of 385nm (3.22eV in photon energy) was observed, which was attributed to the transition involving 3d3 electron of the Cr3+ ions.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2213204
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    Mechanical constraints enhance electrical energy densities of soft dielectrics
    AIP Publishing ; 2011
    In:  Applied Physics Letters Vol. 99, No. 17 ( 2011-10-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 99, No. 17 ( 2011-10-24)
    Abstract: Dielectrics are essential components in modern electronics and electric systems. When a sufficiently high voltage is applied on a layer of a dielectric, the dielectric will breakdown electrically. The breakdown limits the electrical energy density of the dielectric. We show that constraining the deformation of soft dielectrics can greatly enhance their breakdown electric fields and thus increase their electrical energy densities. The mechanical constraints suppress electromechanical instabilities, a major cause for electrical breakdowns in soft dielectrics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.3655910
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 211245-0
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  • 8
    Online Resource
    Online Resource
    Enhancement-mode β -Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 22 ( 2022-11-28)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 22 ( 2022-11-28)
    Abstract: Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future application of ultrawide bandgap β-Ga2O3. In this work, we demonstrated an enhancement-mode β-Ga2O3 U-shaped gate trench vertical metal–oxide–semiconductor field effect transistor (UMOSFET) featuring a current blocking layer (CBL). The CBL was realized by high-temperature annealing under oxygen ambient, which provided electrical isolation between the source and drain electrodes. The CBL thicknesses of different annealing temperatures were derived from C–V measurements and the Fermi level position of the sample surfaces of different annealing temperature was characterized by x-ray photoelectron spectroscopy measurements, indicating good process controllability. Furthermore, photoluminescence spectra were measured to study the effect of oxygen annealing. The fabricated UMOSFET showed normally off with a Vth of 11.5 V, an on-state resistance of 1.48 Ω cm2, a maximum on-state current of 11 A/cm2, an on–off ratio of 6 × 104, and a three-terminal breakdown voltage over 100 V. This work paves a way to form a CBL and broadens the design space for high-power β-Ga2O3 vertical transistors.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0130292
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
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  • 9
    Online Resource
    Online Resource
    Study of the perpendicular magnetic anisotropy, spin–orbit torque, and Dzyaloshinskii–Moriya interaction in the heavy metal/CoFeB bilayers with Ir22Mn78 insertion
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 24 ( 2020-06-15)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 24 ( 2020-06-15)
    Abstract: The perpendicular magnetic anisotropy (PMA), current-induced spin–orbit torques (SOTs), and Dzyaloshinskii–Moriya interaction (DMI) in the as-grown W or Ta/Ir22Mn78(IrMn)/CoFeB/MgO stacks with varying IrMn layer thicknesses were investigated. The in-plane magnetized W/CoFeB/MgO sample becomes perpendicularly magnetized after inserting the IrMn layer without the requirement of the annealing process. The effective magnetization fields 4πMeff show a nonmonotonic dependence on the IrMn layer thickness, which reaches the maximum in magnitude at a thickness of tIrMn = 0.75 nm. The SOT effective fields corresponding to damping-like and field-like torques decrease with the insertion layer thickness. Moreover, the variation of the IrMn layer thickness leads to the change of the DMI in magnitude and sign change from positive (favoring right-handed chirality) to negative (favoring left-handed chirality). The realization of changing the PMA, SOTs, and DMI by inserting the IrMn layer provides more flexibility in the design of spintronic devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0006138
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
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  • 10
    Online Resource
    Online Resource
    Theoretical prediction of time-related performance of GaN-based p–n junction betavoltaic battery
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 122, No. 17 ( 2023-04-24)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 17 ( 2023-04-24)
    Abstract: Betavoltaic batteries can meet long-term energy supply needs. However, due to the decay of the radioactive source, the output performance of battery will change over time, and the laws of this change require elucidation to aid the battery engineer. In this study, the influences of time on the apparent power density and β-energy spectrum of the 63 Ni source were clarified. Moreover, the structural parameters, including the p-region, n-region doping concentrations, and junction depth of GaN-based (hexagonal) p–n junction, were optimized, which are 2 × 1017 cm–3, 1014 cm–3, and 0.1 μm, respectively. In particular, the time-related performance trends were analyzed, and a formula for the maximum output power density deterioration was obtained, which can be used to evaluate the performance of 63 Ni GaN-based p–n junction betavoltaic battery within 200 years. The simulation results showed that the maximum output power density of battery after 50 years is 0.243 μW cm−2, which is only 60% of the initial value. In addition, the other output performances, namely, the short-circuit current density, open-circuit voltage, fill factor, and conversion efficiency are 0.096 μA cm−2, 2.67 V, 94.3%, and 20.5%, respectively.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0142965
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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