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  • AIP Publishing  (9)
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  • AIP Publishing  (9)
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  • 1
    Online Resource
    Online Resource
    Revisiting the switching characteristics and electroresistance effect in ferroelectric thin film towards an optimized hybrid switching strategy
    AIP Publishing ; 2020
    In:  Journal of Applied Physics Vol. 128, No. 22 ( 2020-12-14)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 128, No. 22 ( 2020-12-14)
    Abstract: Combining scanning force microscopy characterization and theoretical modeling, in this work, we performed an in-depth study on the electrical/mechanical switching and electroresistance effect in a BaTiO3 thin film. Correlations of the tip load (bias/force and loading time), the switched polarization magnitude, the surface potential, and the tunnel electroresistance are revealed for both electrical and mechanical switching. It is found that electrical switching (with a maximum bias of 4 V) leads to larger saturated switched polarization and sharper switched domain than mechanical switching (with a maximum force of 6600 nN). Meanwhile, mechanical switching exhibits generally smaller surface potential of the switched domain and a more significant tunnel electroresistance effect. However, the load time-dependence of performance is also more serious for mechanical switching. The different characteristics between electrical and mechanical switching are attributed to the charge injection and the switched domain size, which are believed to further affect the surface potential and the tunnel electroresistance of the thin film. At the end, an optimized hybrid switching strategy, which combines tip force and bias, is proposed and shown to be able to achieve complete polarization reversion, low charge injection, high switch speed, and strong tunnel electroresistance effect.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/5.0024166
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    Charge-carrier dynamics and regulation strategies in perovskite light-emitting diodes: From materials to devices
    AIP Publishing ; 2022
    In:  Applied Physics Reviews Vol. 9, No. 2 ( 2022-06-01)
    Details
    In: Applied Physics Reviews, AIP Publishing, Vol. 9, No. 2 ( 2022-06-01)
    Abstract: In recent years, perovskite light-emitting diodes (PeLEDs) have developed rapidly with the highest external quantum efficiency exceeding 20%. Their unbalanced carrier injection and non-radiative recombination assisted by defects lead to the destruction of perovskite crystal structures and poor device stability, which hinders their commercialization process. Thus, to understand the origin of device performance, the key is to figure out the charge-carrier dynamics of the devices. In this review, the charge-carrier dynamics of perovskites are discussed, including radiative and non-radiative recombination, together with the various passivation strategies. Second, we focus on the interfacial carrier dynamics and its influence on device performance. Various strategies to improve the injection balance have been implemented to address the inherent challenges associated with PeLEDs. Last but not least, the characterization techniques of PeLEDs are provided to study the carrier dynamics of PeLEDs.
    Type of Medium: Online Resource
    ISSN: 1931-9401
    URL: Article
    DOI: 10.1063/5.0080087
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2265524-4
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  • 3
    Online Resource
    Online Resource
    Normal or inverse magnetocaloric effects at the transition between antiferromagnetism and ferromagnetism
    AIP Publishing ; 2012
    In:  Applied Physics Letters Vol. 100, No. 24 ( 2012-06-11)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 100, No. 24 ( 2012-06-11)
    Abstract: The magnetocaloric effect (MCE) at the antiferromagnetic (AF) to ferromagnetic (F) phase transition in Mn1.05Ni0.85Ge and CrO1.86F0.14, and the MCE at the F-AF transition in Tb3Co have been investigated. Mn1.05Ni0.85Ge and CrO1.86F0.14 are found to exhibit the inverse MCE whereas the MCE of Tb3Co is normal. For these compounds, the dependence of the transition temperature on the applied magnetic field B has been studied. A thermodynamical analysis is presented of the sign of the magnetic-entropy change in these three compounds which are representatives of two different types of B-T diagrams. Other possible B-T diagrams are discussed and the analysis is extended to AF-F and F-AF phase transitions reported in literature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4729122
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2012
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Magnetic properties and unusual exchange coupling in self-organized NdMnO3/Mn3O4 nanocomposite films
    AIP Publishing ; 2011
    In:  Journal of Applied Physics Vol. 110, No. 1 ( 2011-07-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 110, No. 1 ( 2011-07-01)
    Abstract: The NdMnO3/Mn3O4 nanocomposite film was synthesized by spontaneous phase decomposition of NdMn2O5. NdMnO3 is a canted A-type antiferromagnet with a Néel temperature of about 75 K, while Mn3O4 is ferrimagnetic below its Curie temperature of 42 K. Ferromagnetic order of the Nd moments in NdMnO3 around 15 K has been confirmed. These moments are antiferromagnetically coupled with the Mn moments. The effect of the consecutive magnetic orderings of NdMnO3 on the exchange coupling between NdMnO3 and Mn3O4 has been investigated. The temperature dependence of the exchange bias manifests itself as a peak at 20 K, which is explained in terms of competing ferromagnetic and antiferromagnetic coupling of the Mn and Nd magnetic sublattices with Mn moments of Mn3O4, respectively.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3596810
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 5
    Online Resource
    Online Resource
    Raman spectra and room-temperature ferromagnetism of hydrogenated Zn0.95Mn0.05O nanopowders
    AIP Publishing ; 2009
    In:  Journal of Applied Physics Vol. 105, No. 12 ( 2009-06-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 105, No. 12 ( 2009-06-15)
    Abstract: Two additional vibration modes at 250 and 529 cm−1 were observed in hydrogenated Zn0.98Mn0.05O nanopowders. The number of oxygen vacancies was increased by hydrogenation, which induced the mode at 250 cm−1. The additional vibration mode at 529 cm−1 was due to the increase of the number of subsititutional Mn atoms occupying Zn sites, which resulted that some new lattice defects were introduced or intrinsic host-lattice defects became activated/intensified. The room-temperature ferromagnetism was observed in the hydrogenated Zn0.98Mn0.05O nanopowders prepared at high temperature (T=700 °C), which originated from the lattice defects such as oxygen vacancies and Zn interstitials.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3147867
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 6
    Online Resource
    Online Resource
    Actively mode tunable electromagnetically induced transparency in a polarization-dependent terahertz metamaterial
    AIP Publishing ; 2020
    In:  AIP Advances Vol. 10, No. 4 ( 2020-04-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 10, No. 4 ( 2020-04-01)
    Abstract: Electromagnetically induced transparency (EIT) is a quantum destructive interference phenomenon in three-level atomic systems, which can slow down the light velocity and has application prospects in information storage and processing. However, the EIT effect in atomic systems requires harsh experimental conditions. This problem can be solved by employing an EIT metamaterial, where destructive interference occurs between a bright mode and a dark mode or a quasi-dark mode, inducing a transparency window accompanied by the slow light effect. Here, we propose an actively mode tunable electromagnetically induced transparency terahertz metamaterial, which is comprised of a T-type resonator, a split-ring resonator (SRR), and coupled split-ring resonators (CSRRs). When the external electric field is vertical to the gap of the SRR (x-polarization), there is a single EIT mode accompanied by one slow light wave packet. On the other hand, when the external electric field is parallel to the gap of the SRR (y-polarization), there are two EIT modes accompanied by two slow light wave packets. Therefore, an active switch from a single EIT mode to dual EIT modes controlled by changing the polarization is demonstrated, which can find explanation from the electric field intensity distributions. This work offers a strategy to realize the mode tunable EIT, which may achieve potential applications in active filters, modulators, and slow light devices.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5144934
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 2583909-3
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  • 7
    Online Resource
    Online Resource
    A comprehensive picture in the view of atomic scale on piezoelectricity of ZnO tunnel junctions: The first principles simulation
    AIP Publishing ; 2016
    In:  AIP Advances Vol. 6, No. 6 ( 2016-06-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 6, No. 6 ( 2016-06-01)
    Abstract: Piezoelectricity is closely related with the performance and application of piezoelectric devices. It is a crucial issue to understand its detailed fundamental for designing functional devices with more peculiar performances. Basing on the first principles simulations, the ZnO piezoelectric tunnel junction is taken as an example to systematically investigate its piezoelectricity (including the piezopotential energy, piezoelectric field, piezoelectric polarization and piezocharge) and explore their correlation. The comprehensive picture of the piezoelectricity in the ZnO tunnel junction is revealed at atomic scale and it is verified to be the intrinsic characteristic of ZnO barrier, independent of its terminated surface but dependent on its c axis orientation and the applied strain. In the case of the ZnO c axis pointing from right to left, an in-plane compressive strain will induce piezocharges (and a piezopotential energy drop) with positive and negative signs (negative and positive signs) emerging respectively at the left and right terminated surfaces of the ZnO barrier. Meanwhile a piezoelectric polarization (and a piezoelectric field) pointing from right to left (from left to right) are also induced throughout the ZnO barrier. All these piezoelectric physical quantities would reverse when the applied strain switches from compressive to tensile. This study provides an atomic level insight into the fundamental behavior of the piezoelectricity of the piezoelectric tunnel junction and should have very useful information for future designs of piezoelectric devices.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.4954696
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 2583909-3
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  • 8
    Online Resource
    Online Resource
    Emerging opportunities for voltage-driven magneto-ionic control in ferroic heterostructures
    AIP Publishing ; 2021
    In:  APL Materials Vol. 9, No. 4 ( 2021-04-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 9, No. 4 ( 2021-04-01)
    Abstract: Voltage control of magnetism has been considered and proven to be an efficient actuation protocol to boost energy efficiency in a widespread range of spintronic devices. In particular, the study of voltage-induced changes in magnetism by the magneto-ionic effect has rapidly accelerated during the past few years due to the versatile advantages of effective control, non-volatile nature, low-power cost, etc. In this perspective, we briefly outline the recent research progress on the voltage-controlled magneto-ionic effect by using two representative dielectric gating materials [ionic liquids (ILs) and ionic conductors] in different functional solid-state heterostructures and devices, mainly including both the ferroic-order [ferromagnetic, ferroelectric (FE), and multiferroic] oxides and magnetic metal-based heterostructure systems. Within the framework of ferroic oxide heterostructures, we have also extended the IL control to FE materials, clarifying that FE properties can also be tailored by electrostatic and electrochemical methods. Finally, we discuss the challenges and future aspects of magneto-ionics, which would inspire more in-depth studies and promote the practical applications.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0045820
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2722985-3
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  • 9
    Online Resource
    Online Resource
    Phase field study on the flexoelectric response of dielectric–ferroelectric multilayers
    AIP Publishing ; 2023
    In:  Journal of Applied Physics Vol. 134, No. 1 ( 2023-07-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 134, No. 1 ( 2023-07-07)
    Abstract: We report a theoretical modeling of the flexoelectric response of dielectric–ferroelectric (DE–FE) multilayers based on phase field simulations in the framework of the Landau–Ginzburg–Devonshire (LGD) theory. The correlation between negative capacitance and flexoelectric response is revealed, and the single-domain and multi-domain models are compared. It shows that the dielectric layers drive the ferroelectric layer into a negative capacitance regime, and the flexoelectric response of the multilayer is maximal when the negative capacitance of the ferroelectric layer has a minimal absolute value. Moreover, the flexoelectric response peak will be shifted to a lower temperature by increasing the thickness of dielectric layer, indicating a possibility of achieving a stronger flexoelectric response at room temperature compared with that of pure ferroelectric. However, while the single-domain model shows that the flexoelectric response peak is simply shifted to a lower temperature with near constant peak value and width, the multi-domain model reveals a significant suppressing of the flexoelectric peak by the dielectric layer. This is attributed to the formation of the vortex domain state, which eases the depolarization effect and leads to large absolute value of negative capacitance of the ferroelectric layer. Our work provides new insights into flexoelectricity in ferroelectric heterostructures.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/5.0153199
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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