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  • AIP Publishing  (6)
  • 1
    Online Resource
    Online Resource
    Spin–orbit torque-based reconfigurable physically unclonable functions
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 19 ( 2020-05-11)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 19 ( 2020-05-11)
    Abstract: The spin torque effects discovered in spintronics have a broad prospect for applications in information memory and logic devices, wherein deterministic switching is highly desired. Variations between devices originating from the fabrication process and inherently random physical features are detrimental to memory and logic devices; however, they are potential entropy sources for hardware security primitives. Here, we demonstrate two types of spin–orbit torque (SOT)-based reconfigurable physically unclonable functions (rPUFs) that are based on process-induced SOT switching current variations and SOT-induced domain wall (DW) nonlinear dynamics, respectively. The experimental results show that both rPUFs have excellent performance in terms of reliability and uniqueness, and the performance is sustained after reconfiguring. Furthermore, the DW nonlinear dynamics-based rPUF can be reconfigured for an unlimited number of times with high uniformity. We believe that our work paves a way for information security and expands the application fields of spintronics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0004089
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Integrator based on current-controlled magnetic domain wall
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 118, No. 5 ( 2021-02-01)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 118, No. 5 ( 2021-02-01)
    Abstract: Integrators are widely used in industrial controls, signal processing, and computing. However, traditional resistor–capacitor integrators incur leakage errors and zero drift, hindering their accuracy. By contrast, spintronic devices with good scalability and endurance for memory and logic applications in digital circuits have yet to be studied for analog circuit elements. Here, we propose a single-device spintronic integrator based on the current-controlled magnetic domain wall (DW). Continuous DW motion and correlated changes in the anomalous Hall resistance (or magneto-resistance) are encoded as an analog output signal, which is modulated by an input current through the spin–orbit-torque effect. Waveform transformation and phase-shift functions are demonstrated using Hall-bar devices. The spintronic integrator could pave the way for the spin-based analog computing with high reliability, high endurance, and good compatibility with the CMOS process.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0041362
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    A three-dimensional magnetic field sensor based on a single spin–orbit-torque device via domain nucleation
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 120, No. 23 ( 2022-06-06)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 23 ( 2022-06-06)
    Abstract: Detecting a three-dimensional (3D) magnetic field by a compact and simple structure or device has always been a challenging work. The recent discovery of 3D magnetic field sensing through the single spin–orbit torque device consisting of the Ta/CoFeB/MgO heterostructure, based on the domain wall motion, offers a revolutionary way to tackle this problem. Here, we demonstrate a 3D magnetic field sensor based on the W/CoFeB/MgO heterostructure via domain nucleation dominated magnetization reversal. In such a heterostructure, the in-plane (IP) and out-of-plane (OOP) magnetic field components drive the grains reversal with different manners, enabling the distinguishment of the contributions from IP and OOP components. The linear modulations of anomalous Hall resistance by x, y, and z components of magnetic fields have been obtained, respectively, with the same linear range of −20 to +20 Oe for each component. Typically, a higher linearity is realized in this work compared with the previous domain wall motion based sensor, which is a critical characteristic for the magnetic field sensor.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0093949
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Perspectives on two-dimensional ultra-thin materials in energy catalysis and storage
    AIP Publishing ; 2023
    In:  APL Materials Vol. 11, No. 5 ( 2023-05-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 11, No. 5 ( 2023-05-01)
    Abstract: Over the past few decades, the design and development of advanced materials based on two-dimensional (2D) ultra-thin materials for efficient energy catalysis and storage have aroused much attention. 2D ultra-thin materials have emerged as the most promising candidates for energy catalysis and storage because of their unique physical, chemical, and electronic properties. Herein, we review the research and application of 2D ultra-thin material-based catalysts for heterogeneous catalysis. The various catalysts based on 2D ultra-thin materials, such as MXenes, GO, black phosphorus, and h-BN, are discussed in detail for catalytic processes in the fields of electrocatalysis, photocatalysis, and energy catalysis. The fundamental relationships between the electronic structure and catalytic activity of 2D ultra-thin materials were described at the atomic level. A significant emphasis on the development of 2D ultra-thin materials and their intrinsic activity and stability was presented. Finally, the prediction and prospection of the future development of 2D ultra-thin materials as efficient nanomaterials are also conveyed. It is important to thoroughly understand and summarize such 2D ultra-thin materials to provide further guidance for structural optimization and performance improvement.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0148143
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2722985-3
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  • 5
    Online Resource
    Online Resource
    Synthesis of Co9S8@CNT hydrogen production composites by one-step pyrolysis of monomolecule precursor
    AIP Publishing ; 2023
    In:  APL Materials Vol. 11, No. 6 ( 2023-06-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 11, No. 6 ( 2023-06-01)
    Abstract: Co9S8 is a highly promising electrochemically active material for energy devices; its rational design and manufacture for further enhancing the electrochemical activity and durability are still challenging. Herein, Co9S8@CNT compounds are synthesized by one-step pyrolysis, which self-assembled the monomolecular precursor and carbon nanotubes (CNTs). The CNTs effectively improve the electrical conductivity of the materials and availability of the catalytically active sites, which means that the electrochemical ability of Co9S8@CNT is better than that of individual Co9S8 and CNTs. The onset potential of Co9S8@CNT is 132 mV, which has greatly decreased. At the mass current density of 10 mA mg−1, the overpotential is 337 mV, and the Tafel slope is 49.8 mV dec−1. The addition of CNTs makes up for the deficiency of low electrical conductivity of the CoSx. Furthermore, the three-dimensional (3D) structure of the composite improves its electrocatalytically active surface area, and the electrocatalytic ability has been improved efficiently, owing to the increased number of catalytic sites on the surface.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0146776
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2722985-3
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  • 6
    Online Resource
    Online Resource
    H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 111, No. 7 ( 2017-08-14)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 111, No. 7 ( 2017-08-14)
    Abstract: Amorphous In-Ga-Zn-O thin-film transistors on flexible substrates were prepared to investigate H2O adsorption under negative bias stress (NBS). Shorter channel lengths induce a more seriously deteriorated NBS stability due to the stronger electric field near the source or drain electrode. With increasing channel width, the NBS instability increases to a peak and then slightly decreases. Integrated Systems Engineering Technology Computer-aided Design (ISE-TCAD) simulation confirms that the electric field near the source/drain in the etch-stop layer is relatively dense, especially near the channel edges. The electric field direction is also confirmed to have significant effects on the H2O adsorption process.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4999923
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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