In:
Journal of Applied Physics, AIP Publishing, Vol. 76, No. 12 ( 1994-12-15), p. 7805-7808
Abstract:
Using a model where a fraction of carbon dangling bonds on the growth surface are saturated by hydrogen, the surface energies of chemical-vapor-deposited diamond crystals during the preparation process have been calculated. The results show that the surface energies increase with the increasing substrate temperature, and the surface energy-temperature curves of the three most energetically favored crystal planes, (100), (110), and (111), intersect at a critical substrate temperature. Then, the changes of predominant facets in the surface morphology from {100} to {111} with the increasing substrate temperature can be interpreted. Furthermore, it is found that the surface energies of diamond are lower than that of graphite in the chemical-vapor-deposition process of diamond.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1994
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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