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  • AIP Publishing  (2)
  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2023
    In:  Chinese Journal of Chemical Physics Vol. 36, No. 1 ( 2023-02-01), p. 41-49
    In: Chinese Journal of Chemical Physics, AIP Publishing, Vol. 36, No. 1 ( 2023-02-01), p. 41-49
    Abstract: The photoionization and dissociative photoionization of m-xylene (C8H10) were researched by using synchrotron radiation vacuum ultraviolet (SR-VUV) and supersonic expanding molecular beam reflectron time-of-flight mass spectrometer (RFTOF-MS) system. The photoionization efficiency spectra (PIEs) of parent ion C8H10+ and main fragment ions C8H9+ and C7H7+ were observed, and the ionization energy (IE) of m-xylene and appearance energies (AEs) of main fragment ions C8H9+ and C7H7+ were determined to be 8.60±0.03 eV, 11.76±0.04 eV and 11.85±0.05 eV, respectively. Structures of reactant, transition states (TSs), intermediates (INTs), and products involved in two dominant dissociation channels were optimized at the B3LYP/6-311++G(d,p) level, and the relative energies were calculated at the G3 level. Based on the results, two major dissociative photoionization channels, C7H7++CH3 and C8H9++H were calculated at the B3LYP/6-311++G(d,p) level. On the basis of theoretical and experimental results, the dissociative photoionization mechanisms of m-xylene were proposed. The C–H or C–C bond dissociation and hydrogen migration are the main processes in the dissociation channels of m-xylene cation.
    Type of Medium: Online Resource
    ISSN: 1674-0068 , 2327-2244
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2381472-X
    SSG: 6,25
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  • 2
    In: AIP Advances, AIP Publishing, Vol. 9, No. 8 ( 2019-08-01)
    Abstract: Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliation is observed on LN wafers with different orientations. The Z-cut LN shows regular surface blistering and “plate-like” exfoliation, while the Y-cut LN shows the unique “rolled-up” exfoliation. Two types of defect, i.e. the pressure-related plateau defect and the stress-related crack defect, are observed to contribute to the film exfoliation. Moreover, the defect evolution in H-implanted LN is investigated. In comparison with the He-implanted LN, implanted H ions are mainly trapped by O-H bond and the implantation-induced strain is not strong enough, which are inadequate to form the continuous crack. Therefore the H ions are not favorable for the mass production of LNOI substrates.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2583909-3
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