In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 14 ( 2007-10-01)
Abstract:
We report the effect of thermal annealing on the strain relaxation of SiGe virtual substrate. The results show that the strain of the SiGe layer relaxes anisotropically with thermal annealing through the formation of the misfit dislocations. The strain field fluctuation persists up to the annealing temperature of 1000°C, suggesting that the in-plane strain fluctuation could be eliminated by thermal annealing process. In particular, from the analysis of spatially resolved ultraviolet Raman mapping, we found that the normal region relaxes with a faster rate than the crosshatch region as attributed to larger initial strain.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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