In:
Journal of Applied Physics, AIP Publishing, Vol. 132, No. 16 ( 2022-10-28)
Abstract:
In this paper, the ohmic contact mechanism and gate electrostatic control of a deep-recessed ohmic contact structure for multi-channel Al0.3Ga0.7N/GaN high electron mobility transistors (HEMTs) is investigated. A transmission electron microscope and an energy dispersive spectrum are utilized to investigate the ohmic contact interface mechanism. Due to a reduction of source/drain parasitic resistances and simultaneous connection of five channels by using deep-recessed ohmic contact, a large maximum drain current density and a distinct five hump feature of ultra-wider trans-conductance are achieved. More importantly, it is revealed that the downward expansion of the gate potential for the deep-recessed ohmic contact structure is much deeper than that for conventional devices. This characteristic leads to a remarkable reduction in subthreshold swing (SS) and off-state leakage, indicating an ultra-wide and high trans-conductance profile. The fabricated devices show a lower off-state drain leakage, a lower SS, and a wider gate voltage swing (40 V). Due to an enhancement of gate electrostatic control, the current collapse and electrical reliability characteristics of multi-channel Al0.3Ga0.7N/GaN HEMTs with deep-recessed ohmic contact also improve. The results presented here indicate that the multi-channel device has great potential for high current and wide bandwidth applications.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2022
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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