In:
Applied Physics Letters, AIP Publishing, Vol. 120, No. 23 ( 2022-06-06)
Abstract:
With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of & gt;1 V, a steep back sweep subthreshold swing of & lt;60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2022
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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