GLORIA

GEOMAR Library Ocean Research Information Access

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • AIP Publishing  (3)
Material
Publisher
  • AIP Publishing  (3)
Language
Years
Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  AIP Advances Vol. 11, No. 6 ( 2021-06-01)
    In: AIP Advances, AIP Publishing, Vol. 11, No. 6 ( 2021-06-01)
    Abstract: As state-of-the-art fabrication techniques are approaching the 3 nm size, the traditional silicon-based circuit faces huge challenges. Transistors based on two-dimensional (2D) materials have attracted much attention as potential alternative candidates. However, critical performances including the subthreshold swing (SS), on/off ratio, and magnitude of the on-state current for 2D transistors around 3 nm size are far less to be studied well. In this work, we propose in-plane Schottky-barrier field-effect transistors (SBFETs) with a 4-nm channel based on the lateral heterostructure of monolayer 1T/2H MoTe2 and WTe2. The electric transport properties are investigated by first-principles quantum transport simulations. At a 0.64 V bias, the WTe2 SBFET has an on-state current of 3861 μA/μm, with a 4.5 × 104 on/off ratio and an SS of 87 mV/dec, while the MoTe2 SBFET has an on-state current of 1480 μA/μm, with a large on/off rate of 3.6 × 105 and an SS of 78 mV/dec. Our results suggest that FETs based on the lateral heterostructure of 1T/2H MoTe2 (WTe2) are promising candidates for high-performance 2D transistors.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2583909-3
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2019
    In:  Applied Physics Letters Vol. 115, No. 15 ( 2019-10-07)
    In: Applied Physics Letters, AIP Publishing, Vol. 115, No. 15 ( 2019-10-07)
    Abstract: Using density functional theory combined with nonequilibrium Green's function, the photocurrent induced by the photogalvanic effect of two phases of Te-based monolayer materials is calculated along both their zigzag and armchair directions under the irradiation of the linearly polarized light. Results show that the photocurrent has a sinusoidal shape with regard to the polarization angle of the light at all simulated bias voltages for different photon energies. A photocurrent peak for α-Te and β-Te is at the photon energy of around 1.4 and 1.8 eV, respectively. Furthermore, for α-Te the phase of the photocurrent vs the polarization angle curve reserves when the photon energy increases, while for β-Te the phase remains unchanged in our simulated photon energy range. The different optical responses of the two phases of Te-based monolayer materials along different directions make them have potential applications in various aspects of optoelectronics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
  • 3
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 12 ( 2023-09-18)
    Abstract: Amplification of weak ultraviolet signals has always been a challenging issue to design and fabricate high-performance ultraviolet photodetectors. Here, we observe a distinctive microplasma breakdown behavior in AlGaN-based ultraviolet avalanche photodiodes with artificial mesa architecture. At 107 V breakdown voltage, the photocurrent increases sharply whereas dark current intriguingly remains at the extremely low level of 0.1 nA as the applied voltage increases. Simultaneously, a significant blue luminescence phenomenon is observed at the mesa edge of photodiode at breakdown voltage, indicating the occurrence of microplasma breakdown. Ultimately, the microplasma avalanche photodiode achieves a record-high avalanche gain of 3 × 106 with light–dark current ratio readily exceeding 107. Kelvin probe force microscopy was employed to reveal the physical mechanism of localized avalanche breakdown induced by photoelectric effects and elaborate the microplasma discharge process, which is related to surface states. The unprecedented detection mode of photocurrent triggering avalanche events while remaining low dark current is anticipated to effectively shield the background noise and amplify ultraviolet signals. It is worth further research to explore its possibility on high-sensitivity ultraviolet photodetection.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...