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  • AIP Publishing  (98)
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  • AIP Publishing  (98)
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  • 1
    In: Matter and Radiation at Extremes, AIP Publishing, Vol. 8, No. 5 ( 2023-09-01)
    Abstract: The first laser–plasma interaction experiment using lasers of eight beams grouped into one octad has been conducted on the Shenguang Octopus facility. Although each beam intensity is below its individual threshold for stimulated Brillouin backscattering (SBS), collective behaviors are excited to enhance the octad SBS. In particular, when two-color/cone lasers with wavelength separation 0.3 nm are used, the backward SBS reflectivities show novel behavior in which beams of longer wavelength achieve higher SBS gain. This property of SBS can be attributed to the rotation of the wave vectors of common ion acoustic waves due to the competition of detunings between geometrical angle and wavelength separation. This mechanism is confirmed using massively parallel supercomputer simulations with the three-dimensional laser–plasma interaction code LAP3D.
    Type of Medium: Online Resource
    ISSN: 2468-2047 , 2468-080X
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2858469-7
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  • 2
    In: Matter and Radiation at Extremes, AIP Publishing, Vol. 4, No. 5 ( 2019-09-01)
    Abstract: We report experimental research on laser plasma interaction (LPI) conducted in Shenguang laser facilities during the past ten years. The research generally consists of three phases: (1) developing platforms for LPI research in mm-scale plasma with limited drive energy, where both gasbag and gas-filled hohlraum targets are tested; (2) studying the effects of beam-smoothing techniques, such as continuous phase plate and polarization smoothing, on the suppression of LPI; and (3) exploring the factors affecting LPI in integrated implosion experiments, which include the laser intensity, gas-fill pressure, size of the laser-entrance hole, and interplay between different beam cones. Results obtained in each phase will be presented and discussed in detail.
    Type of Medium: Online Resource
    ISSN: 2468-2047 , 2468-080X
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2858469-7
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  • 3
    In: AIP Advances, AIP Publishing, Vol. 9, No. 9 ( 2019-09-01)
    Abstract: In order to study the laser plasma instabilities (LPIs) in the context of some novel six-side laser-driven indirect designs like the six-cylinder-port hohlraum and the three-axis cylindrical hohlraum, where the laser beams inject in hohlraum with a large angle. LPI experiments in cylindrical hohlraum with only outer beams were designed and performed based on the current laser arrangement condition of SGIII laser facility for the first time. Stimulated Brillouin backscatter (SBS) was found to be the dominant instability with high instantaneous reflectivity in experiments. A typical feature was obtained in the time-resolved spectra of SBS, which maintained similar for different laser intensities of the interaction beam. The experimental data are analyzed by the hydrodynamic simulations combined with HLIP code, which is based on the ray-tracing model. By analysis of experimental data, it is argued that the mixture of gas and Au in the region of their interface is important to SBS, which indicates the need for the mixture model between the filled gas and the high Z plasma from hohlraum wall in the hydrodynamic simulations. Nonlinear saturation of SBS as well as the smoothed beam are also discussed here. Our effective considerations of the ions pervasion effect and the smoothed beam provide utilitarian ways for improvement of the current ray-tracing method.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2583909-3
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  • 4
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 9 ( 2023-02-27)
    Abstract: In this Letter, threshold voltage instability of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias (HTRB) stress has been investigated in detail. The experimental results show that the threshold voltage increases by 0.62 V after 100 ks stress at 200 °C. Especially, the degradation phenomenon is unrecoverable. A deep-level transient spectroscopy (DLTS) technique is used to characterize the defect evolution process during the stress. Two kinds of electron traps within the p-GaN layer were proposed to explain the degradation, which were generated by the injected high-energy electrons from the gate electrode. One is referred to as fixed charge trap, and another is trap E3 (EC-0.7 eV). With the aid of high temperature, more electrons are injected and trapped in the fixed charge trap, which causes the permanent threshold voltage increase. In addition, the concentration and capture cross section of trap E3 were extracted as well, which are considered to dominate the recoverable degradation of the device due to the relatively shallower energy level.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    In: Applied Physics Letters, AIP Publishing, Vol. 109, No. 24 ( 2016-12-12)
    Abstract: Molybdenum disulfide (MoS2), a relatively new and exciting two-dimensional graphene-like material, has been attracting more and more attentions from the researchers due to its unique structural and fascinating properties. The potential application of MoS2 under high-pressure and low-temperature is expected, while the related research is few at present. In this paper, quadrilayer MoS2 was synthesized by chemical vapor deposition, and its structural properties under different pressures (0–20.7 GPa) and temperatures (10–300 K) were investigated via the Raman spectra. We find that the lattice of quadrilayer MoS2 is not damaged and the quadrilayer MoS2 exhibits good semiconductive properties under large variable pressures from atmospheric to 20.7 GPa, which is much different to its bulk and single crystalline phases. In addition, the lattice structures of the quadrilayer MoS2 are stable in 10–300 K, and the Grüneisen parameters of E12g and A1g modes are smaller than that of bulk. This study indicates that quadrilayer MoS2 has a better prospect in high-pressure and low-temperature environment.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    In: Applied Physics Letters, AIP Publishing, Vol. 122, No. 17 ( 2023-04-24)
    Abstract: Physically transient resistive switching devices, a form of memory devices with the ability of achieving physical disappearance in a controllable manner, hold tremendous potentials in multiple security applications. Herein, we demonstrated a physically transient form of memristive device composed of Ag/polyvinyl alcohol/W with configurable resistive switching functionality for security neuromorphic computing. The resistive switching type of the transient device could be modulated effectively by controlling the compliance current during the set process, which was well interpreted by the filament model. Typical synaptic functions pertained to short-term plasticity (STP) and its transition from STP to long-term plasticity were vividly mimicked in this transient memristive device. Importantly, both the synaptic functions and physical form of the transient devices were capable of disappearing instantly upon immersing in de-ionized water, and the dissolution characteristics of the constituent transient materials were investigated experimentally to reveal the degradation mechanism of the device. This transient form of artificial synapse provides foreseeing perspectives on information security enhancement for neuromorphic computing systems.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    AIP Publishing ; 2022
    In:  Physics of Plasmas Vol. 29, No. 9 ( 2022-09-01)
    In: Physics of Plasmas, AIP Publishing, Vol. 29, No. 9 ( 2022-09-01)
    Abstract: Cold atmospheric plasma in air commonly operates in the O3 mode and NOx mode, which easily interconvert through a transition mode, depending on discharge conditions. Given that the humidity varies considerably in different weather, it is important to elucidate the effect of humidity on the discharge mode transition, but few studies have been reported thus far. In this study, air plasmas were generated by a surface dielectric barrier discharge with different discharge powers of 6, 9, and 12 W, and the relative humidity of air was controlled at 1.5% (dry air), 40%, or 80% for a comparative study. It was found that an increase in humidity suppressed the production of O3 but promoted that of NO2 when the discharge power was 6 W, whereas it promoted the production of O3 but suppressed that of NO2 when the discharge power was 12 W. This implies that air humidity could have a bidirectional effect on the discharge mode transition, which was validated by experiments with a moderate power of 9 W. In that case, the discharge in dry air maintained the transition mode at a quasi-stable state, but it transited either into the NOx mode when the humidity was 40% or into the O3 mode when the humidity was 80%. A competition between reaction pathways dominated by N2(ν) or water-originated compounds may be the cause, and our findings indicate that the effect of humidity should be taken seriously in the research and development of air discharge plasmas.
    Type of Medium: Online Resource
    ISSN: 1070-664X , 1089-7674
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 1472746-8
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  • 8
    Online Resource
    Online Resource
    AIP Publishing ; 2023
    In:  Applied Physics Letters Vol. 123, No. 4 ( 2023-07-24)
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 4 ( 2023-07-24)
    Abstract: Herein, a self-rectifying resistive switching memristor synapse with a Ta/NbOx/Pt structure was demonstrated for deep reservoir computing (RC). The memristor demonstrated stable nonlinear analog switching characteristics, with a rectification ratio of up to 1.6 × 105, good endurance, and high uniformity. Additionally, the memristor exhibited typical short-term plasticity and dynamic synaptic characteristics. Based on these characteristics, a deep memristor RC system was proposed for time series prediction. The system achieved a low normalized root mean square error (NRMSE) of 0.04 in the time series prediction of the Henon map. Even at 90 °C, deep RC retains good predictive power with an NRMSE of only 0.07. This work provides guidance for efficient deep memristive RC networks to handle more complex future temporal tasks.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    AIP Publishing ; 2018
    In:  AIP Advances Vol. 8, No. 8 ( 2018-08-01)
    In: AIP Advances, AIP Publishing, Vol. 8, No. 8 ( 2018-08-01)
    Abstract: As a widely used insulating medium, sulfur hexafluoride (SF6) is a greenhouse gas with very high global warming potential (GWP). Some carbon-fluoride gases have potential to replace SF6 in insulating applications. In order to reveal their different dielectric performance, this paper is devoted to a comparative study of dielectric breakdown properties for SF6 and four carbon-fluoride insulating gases i.e. CF3I, C2F6, C3F8, and c-C4F8 mixed with CO2, N2, and CF4 based on the numerical solution of Boltzmann equation. The electron energy distribution function (EEDF), reduced ionization coefficients α/N, reduced electron attachment coefficients η/N, and reduced critical electric field strength (E/N)cr are compared for various gas mixtures. Generally c-C4F8 presents the largest dielectric strength among the four carbon-fluoride insulating gases whichever buffer gas is mixed, while C2F6 presents the lowest dielectric strength. In terms of (E/N)cr and GWP, CF3I is a good eco-friendly insulating medium. However, with the addition of buffer gases, the (E/N)cr of CF3I mixtures declines more quickly than other mixtures. It is also found that the mixing of CF4 makes insulating mixtures depend more linearly on the proportions of buffer gas than CO2 and N2.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2583909-3
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  • 10
    Online Resource
    Online Resource
    AIP Publishing ; 2006
    In:  The Journal of Chemical Physics Vol. 125, No. 2 ( 2006-07-14)
    In: The Journal of Chemical Physics, AIP Publishing, Vol. 125, No. 2 ( 2006-07-14)
    Abstract: The interplay between liquid-liquid phase separation (LLPS) and crystallization at several compositions in statistical copolymer blends of poly(ethyleneco-hexene) and poly(ethylene-cobutene) has been examined by optical microscopy (OM), atomic force microscopy (AFM), and differential scanning calorimetry (DSC). The phase contrast optical microscopy shows interconnected bicontinuous structures for deeply quenched LLPS, characteristic of spinodal decomposition. After a second quench to a temperature below the melting point, an overwhelming change in crystallization kinetics has been clearly observed, which is caused by the increase of the nucleation rate assisted by concentration fluctuations due to the spontaneous spinodal LLPS. We propose a new mechanism of “fluctuation assisted nucleation” in the crystallization process for such interactive process in a blend system. The experimental results from OM, AFM, and DSC measurements at various conditions are all consistent with the fluctuation assisted nucleation model.
    Type of Medium: Online Resource
    ISSN: 0021-9606 , 1089-7690
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 3113-6
    detail.hit.zdb_id: 1473050-9
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