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  • AIP Publishing  (36)
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  • AIP Publishing  (36)
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  • 1
    Online Resource
    Online Resource
    Absolute phase measurement with four patterns based on variant shifting phases
    AIP Publishing ; 2020
    In:  Review of Scientific Instruments Vol. 91, No. 6 ( 2020-06-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 91, No. 6 ( 2020-06-01)
    Abstract: Fringe projection profilometry has been proverbially utilized for measuring the shapes of objects. A common challenge in those systems is to accurately obtain a smooth absolute phase. Many new methods have been proposed to address this challenge. In this paper, we discuss a technique based on variant shifting phases. This approach embeds codewords into the shifting phase and only needs four patterns. However, reliable measurement results are difficult to achieve with a large number of codewords because of the phase errors. To address this shortcoming, we present a robust coding method that embeds a specific code sequence into the shifting phase and can generate more than 36 periods. The fringe order is determined using unique three-adjacent-codes combining the current period and its neighbors. An error correction algorithm is also proposed to optimize the codewords. The proposed method is experimentally verified using an established measurement system. The result shows that the proposed method is robust and efficient.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.5144928
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Tensile strength prediction of orthogonal CFRP under high intensity CW laser irradiation
    AIP Publishing ; 2019
    In:  AIP Advances Vol. 9, No. 10 ( 2019-10-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 9, No. 10 ( 2019-10-01)
    Abstract: Considering the two most important factors, delamination and tensile strength temperature dependence, a tensile strength prediction model for orthogonal carbon fiber reinforced polymer (CFRP) under continuous wave (CW) laser irradiation is proposed. In the prediction model, delamination was judged by the thermal data recorded by a thermal imager. In order to eliminate the influence of heating rate on the tensile strength temperature dependence parameters, a two-sided laser irradiation method was proposed to test the tensile strength temperature dependence of CFRP. Furthermore, according to the temperature distribution in the thickness direction of the T700/E44 CFRP specimen and the tensile strength temperature dependence, the tensile strength for orthogonal CFRP under CW laser irradiation was calculated. The results show that the prediction model can reflect the decreasing process of tensile strength with laser irradiation, especially in the cases of high intensity laser irradiation and high tensile load. This research can make a reference for the tensile strength prediction of composite materials in high intensity CW laser irradiation and pre-tension loading conditions.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5111548
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2583909-3
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Effect of strain on the Curie temperature and band structure of low-dimensional SbSI
    AIP Publishing ; 2018
    In:  Applied Physics Letters Vol. 112, No. 18 ( 2018-04-30)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 112, No. 18 ( 2018-04-30)
    Abstract: Photoferroelectric materials show great promise for developing alternative photovoltaics and photovoltaic-type non-volatile memories. However, the localized nature of the d orbital and large bandgap of most natural photoferroelectric materials lead to low electron/hole mobility and limit the realization of technologically practical devices. Antimony sulpho-iodide (SbSI) is a photoferroelectric material which is expected to have high electron/hole mobility in the ferroelectric state due to its non-local band dispersion and narrow bandgap. However, SbSI exhibits the paraelectric state close to room temperature. In this report, as a proof of concept, we explore the possibility to stabilize the SbSI ferroelectric phase above room temperature via mechanical strain engineering. We synthesized thin low-dimensional crystals of SbSI by chemical vapor deposition, confirmed its crystal structure with electron diffraction, studied its optical properties via photoluminescence spectroscopy and time-resolved photoluminescence spectroscopy, and probed its phase transition using temperature-dependent steady-state photoluminescence spectroscopy. We found that introducing external mechanical strain to these low-dimensional crystals may lead to an increase in their Curie temperature (by ∼60 K), derived by the strain-modified optical phase transition in SbSI and quantified by Kern formulation and Landau theory. The study suggests that strain engineering could be an effective way to stabilize the ferroelectric phase of SbSI at above room temperature, providing a solution enabling its application for technologically useful photoferroelectric devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5017490
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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    Online Resource
  • 4
    Online Resource
    Online Resource
    The variation of C4F7N, C5F10O, and their decomposition components in breakdown under different pressures
    AIP Publishing ; 2021
    In:  AIP Advances Vol. 11, No. 6 ( 2021-06-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 11, No. 6 ( 2021-06-01)
    Abstract: The decomposition characteristics of C4F7N and C5F10O are basic to understand their insulating and arc-quenching performance, and the decomposition products are related to the equipment discharge fault and insulation state. A chemical kinetic model is employed to study the variation of C4F7N, C5F10O, and their decomposition components under different pressures. The results show that the molar fraction and recombination rate of C5F10O are higher than those of C4F7N, and high pressure has larger influence on the molar fraction and recovery rate of C5F10O than those of C4F7N, so C5F10O presents a better molecular recovery characteristic and dielectric strength than C4F7N at high pressures.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0055221
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2583909-3
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  • 5
    Online Resource
    Online Resource
    Space charge and trap energy level characteristics of SiC wide bandgap semiconductor
    AIP Publishing ; 2022
    In:  AIP Advances Vol. 12, No. 3 ( 2022-03-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 12, No. 3 ( 2022-03-01)
    Abstract: Charge carrier transport and accumulation in silicon carbide (SiC) wide bandgap semiconductors caused by the defect and impurity are likely to lead to serious performance degradation and failure of the semiconductor materials, and the high temperature effect makes the charge behaviors more complex. In this paper, charge carrier transport and accumulation in semi-insulating vanadium doped 4H–SiC crystal materials and the correlated temperature effect were investigated. Attempts were made to address the effect of deep trap levels on carrier transport. A combination of pulsed electro-acoustic direct space charge probing, an electrical conduction·current experiment, and x-ray diffraction measurement was employed. Space charge quantities including trap depth and trap density were extracted. The results show hetero-charge accumulation at adjacent electrode interfaces under a moderate electrical stress region (5–10 kV/mm). The charge carrier transports along the SiC bulk and is captured by the deep traps near the electrode interfaces. The deep trap energy levels originating from the vanadium dopant in SiC crystals are critical to carrier transport, providing carrier trapping sites for charges. This paper could promote the understandings of the carrier transport dynamic and trap energy level characteristic of SiC crystal materials.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/5.0085118
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2583909-3
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  • 6
    Online Resource
    Online Resource
    Solution-processed MAPbI3/Cs2AgBiBr6 heterostructure through epitaxial growth for broadband photo-detection
    AIP Publishing ; 2022
    In:  APL Materials Vol. 10, No. 4 ( 2022-04-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 10, No. 4 ( 2022-04-01)
    Abstract: All-inorganic halide semiconductors with perovskite or perovskite-like structure have aroused a widespread concern recently for its environmental friendliness and stabilities while possessing excellent optoelectronic properties. Double perovskite Cs2AgBiBr6 single crystal (SC) is one of the most representative materials in the latest research area. To further improve the device response range and decrease its dark current density effectively, functional layers based on the solution-processed epitaxial method are normally fabricated as heterojunctions. Herein, a novel idea of a broadband heterojunction MAPbI3 (MA = CH3NH3)/Cs2AgBiBr6 is proposed in this work to achieve this goal. A MAPbI3 layer is fabricated on Cs2AgBiBr6 SC substrates through immersing Cs2AgBiBr6 SC into MAPbI3 solution at a MAPbI3 crystallization temperature. Ultimately, this heterojunction device expands the absorption limit from 618 to 838 nm, makes responsivity range redshift from 629 to 860 nm, and achieves a responsivity of 16.8 mA W−1 while the detectivity of 1.33 × 1011 Jones under 622 nm 0.55 mW cm−2 illumination at −20 V bias, maintaining excellent optoelectronic properties.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0087467
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 2722985-3
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  • 7
    Online Resource
    Online Resource
    Strong coupling between Tamm plasmon polariton and two dimensional semiconductor excitons
    AIP Publishing ; 2017
    In:  Applied Physics Letters Vol. 110, No. 5 ( 2017-01-30)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 110, No. 5 ( 2017-01-30)
    Abstract: Two dimensional (2D) semiconductor materials of transition-metal dichalcogenides (TMDCs) manifest many peculiar physical phenomena in the light-matter interaction. Due to their ultrathin property, strong interaction with light and the robust excitons at room temperature, they provide a perfect platform for studying the physics of strong coupling in low dimension and at room temperature. Here we report the strong coupling between 2D semiconductor excitons and Tamm plasmon polaritons (TPPs). We observe a Rabi splitting of about 54 meV at room temperature by measuring the angle resolved differential reflectivity spectra and simulate the theoretical results by using the transfer matrix method. Our results will promote the realization of the TPP based ultrathin polariton devices at room temperature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4974901
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2017
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 8
    Online Resource
    Online Resource
    Investigation of a compact coaxially fed switched oscillator
    AIP Publishing ; 2013
    In:  Review of Scientific Instruments Vol. 84, No. 9 ( 2013-09-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 84, No. 9 ( 2013-09-01)
    Abstract: To generate a relative high frequency mesoband microwave, a compact coaxially fed transmission line switched oscillator with high voltage capability is investigated. The characteristic impedance and voltage capability of the low impedance transmission line (LITL) have been analyzed. It is shown that the working voltage of the oscillator can reach up to 200 kV when it is filled by pressurized nitrogen and charged by a nanosecond driving source. By utilizing a commercial electromagnetic simulation code, the transient performance of the switched oscillator with a lumped resistance load is simulated. It is illustrated that the center frequency of the output signal reaches up to ∼0.6 GHz when the spark gap practically closes with a single channel. Besides, the influence of the closing mode and rapidity of the spark gap, the permittivity of the insulator at the output end of the LITL, and the load impedance on the transient performance of the designed oscillator has been analyzed in quantification. Finally, the good transient performance of the switched oscillator has been preliminarily proved by the experiment.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.4820822
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 9
    Online Resource
    Online Resource
    Design of a tunable turnstile mode converter for high-power microwave applications
    AIP Publishing ; 2021
    In:  Review of Scientific Instruments Vol. 92, No. 10 ( 2021-10-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 92, No. 10 ( 2021-10-01)
    Abstract: This study investigates the frequency tunability of a coaxial transverse electromagnetic mode (TEM)–linear-polarized TE11 mode tunable turnstile mode converter (TTMC) for high-power microwave applications using a combination of simulation and experiment. In the proposed structure, the sliding folded waveguide can be moved radially to meet the requirement of linear polarization, and the matching structure is designed to eliminate the undesired reflection. The simulation shows that the conversion efficiency of the TTMC can reach over 99% in the frequency range of 1.45–2.35 GHz, corresponding to a frequency tuning bandwidth of about 47.4%. Moreover, the TTMC can maintain a continuous high conversion efficiency at different frequency points by changing the tuning mechanism. The experimental investigation shows that the TTMC can convert the coaxial TEM mode into a circular waveguide TE11 mode with a conversion efficiency of above 95% in the frequency range of 1.55–2.35 GHz. The experimental measurements agree well with the simulation results, implying feasibility of the TTMC design and its superior performance.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/5.0046613
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 10
    Online Resource
    Online Resource
    Performance improvement of a magnetically insulated transmission line oscillator with a carbon fiber array cathode
    AIP Publishing ; 2019
    In:  Review of Scientific Instruments Vol. 90, No. 4 ( 2019-04-01)
    Details
    In: Review of Scientific Instruments, AIP Publishing, Vol. 90, No. 4 ( 2019-04-01)
    Abstract: A carbon fiber array cathode (CFAC) was presented and tested in a magnetically insulated transmission line oscillator (MILO) in earlier papers; however, the performance of this cathode was not as good as the traditional polymer velvet cathode, and the nonuniform fibers’ distribution on the cathode surface was postulated as the culprit for this. In this paper, this CFAC has been carefully reprocessed, and the performance is improved (efficiency increases from ∼12% to ∼16%) and reaches a level that is as good as the velvet cathode, which means that this CFAC provides a promising substitute for the polymer velvet cathode in MILO.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    URL: Article
    DOI: 10.1063/1.5084260
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
    Location Call Number Limitation Availability
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